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Results:
1-8
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Results: 8
Authors:
SCHOENFELD W
ANTONELL MJ
ABERNATHY CR
Citation: W. Schoenfeld et al., DOPING OF INSB AND INAS USING CBR4 DURING GROWTH BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 188(1-4), 1998, pp. 50-55
Authors:
ANTONELL MJ
ABERNATHY CR
SHER A
BERDING M
VANSCHILFGAARDE M
SANJURO A
WONG K
Citation: Mj. Antonell et al., GROWTH OF TL-CONTAINING III-V MATERIALS BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 188(1-4), 1998, pp. 113-118
Authors:
SCHOENFELD WV
ANTONELL MJ
ABERNATHY CR
Citation: Wv. Schoenfeld et al., CARBON DOPING OF INSB USING CBR4 DURING GROWTH BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 72(10), 1998, pp. 1235-1237
Authors:
BERDING MA
VANSCHILFGAARDE M
SHER A
ANTONELL MJ
ABERNATHY CR
Citation: Ma. Berding et al., THERMODYNAMICAL PROPERTIES OF THALLIUM-BASED III-V MATERIALS, Journal of electronic materials, 26(6), 1997, pp. 683-687
Authors:
ANTONELL MJ
ABERNATHY CR
KRISHNAMOORTHY V
GEDRIDGE RW
HAYNES TE
Citation: Mj. Antonell et al., THERMAL-STABILITY OF HEAVILY TELLURIUM-DOPED INP GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 26(11), 1997, pp. 1283-1286
Authors:
ANTONELL MJ
ABERNATHY CR
GEDRIDGE RW
Citation: Mj. Antonell et al., TELLURIUM DOPING OF INP USING TRIISOPROPYLINDIUM-DIISOPROPYLTELLURIUM(TIPIN-DIPTE), Journal of crystal growth, 164(1-4), 1996, pp. 420-424
Authors:
ANTONELL MJ
JONES KS
HAYNES TE
Citation: Mj. Antonell et al., CARBON INCORPORATION FOR STRAIN COMPENSATION DURING SOLID-PHASE EPITAXIAL RECRYSTALLIZATION OF SIGE ON SI AT 500-600 DEGREES-C, Journal of applied physics, 79(10), 1996, pp. 7646-7651
Authors:
HAYNES TE
ANTONELL MJ
LEE CA
JONES KS
Citation: Te. Haynes et al., COMPOSITION DEPENDENCE OF SOLID-PHASE EPITAXY IN SILICON-GERMANIUM ALLOYS - EXPERIMENT AND THEORY, Physical review. B, Condensed matter, 51(12), 1995, pp. 7762-7771
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