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Results: 1-7 |
Results: 7
STRESS-INDUCED LEAKAGE CURRENT OF TUNNEL OXIDE DERIVED FROM FLASH MEMORY READ-DISTURB CHARACTERISTICS
Authors: SATOH S HEMINK G HATAKEYAMA K ARITOME S
Citation: S. Satoh et al., STRESS-INDUCED LEAKAGE CURRENT OF TUNNEL OXIDE DERIVED FROM FLASH MEMORY READ-DISTURB CHARACTERISTICS, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 482-486
A SIDE-WALL TRANSFER-TRANSISTOR CELL (SWATT CELL) FOR HIGHLY RELIABLEMULTILEVEL NAND EEPROMS
Authors: ARITOME S TAKEUCHI Y SATO S WATANABE H SHIMIZU K HEMINK G SHIROTA R
Citation: S. Aritome et al., A SIDE-WALL TRANSFER-TRANSISTOR CELL (SWATT CELL) FOR HIGHLY RELIABLEMULTILEVEL NAND EEPROMS, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 145-152
A COMPACT ON-CHIP ECC FOR LOW-COST FLASH MEMORIES
Authors: TANZAWA T TANAKA T TAKEUCHI K SHIROTA R ARITOME S WATANABE H KEMINK G SHIMIZU K SATO S TAKEUCKI Y OHUCHI K
Citation: T. Tanzawa et al., A COMPACT ON-CHIP ECC FOR LOW-COST FLASH MEMORIES, IEEE journal of solid-state circuits, 32(5), 1997, pp. 662-669
A NOVEL PROGRAMMING METHOD USING A REVERSE POLARITY PULSE IN FLASH EEPROMS
Authors: IIZUKA H ENDOH T ARITOME S SHIROTA R MASUOKA F
Citation: H. Iizuka et al., A NOVEL PROGRAMMING METHOD USING A REVERSE POLARITY PULSE IN FLASH EEPROMS, IEICE transactions on electronics, E79C(6), 1996, pp. 832-835
AN ADVANCED NAND-STRUCTURE CELL TECHNOLOGY FOR RELIABLE 3.3-V-64 MB ELECTRICALLY ERASABLE AND PROGRAMMABLE READ ONLY MEMORIES (EEPROMS)
Authors: ARITOME S HATAKEYAMA I ENDOH T YAMAGUCHI T SHUTO S IIZUKA H MARUYAMA T WATANABE H HEMINK G SAKUI K TANAKA T MOMODOMI M SHIROTA R
Citation: S. Aritome et al., AN ADVANCED NAND-STRUCTURE CELL TECHNOLOGY FOR RELIABLE 3.3-V-64 MB ELECTRICALLY ERASABLE AND PROGRAMMABLE READ ONLY MEMORIES (EEPROMS), JPN J A P 1, 33(1B), 1994, pp. 524-528
DATA RETENTION CHARACTERISTICS OF FLASH MEMORY CELLS AFTER WRITE AND ERASE CYCLING
Authors: ARITOME S SHIROTA R SAKUI K MASUOKA F
Citation: S. Aritome et al., DATA RETENTION CHARACTERISTICS OF FLASH MEMORY CELLS AFTER WRITE AND ERASE CYCLING, IEICE transactions on electronics, E77C(8), 1994, pp. 1287-1295
RELIABILITY ISSUES OF FLASH MEMORY CELLS
Authors: ARITOME S SHIROTA R HEMINK G ENDOH T MASUOKA F
Citation: S. Aritome et al., RELIABILITY ISSUES OF FLASH MEMORY CELLS, Proceedings of the IEEE, 81(5), 1993, pp. 776-788
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