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Results: 1-11 |
Results: 11
COMPUTATIONAL SOLUTION OF THE ATOMIC MIXING EQUATIONS
Authors: KIRKUP SM WADSWORTH M ARMOUR DG BADHEKA R VANDENBERG JA
Citation: Sm. Kirkup et al., COMPUTATIONAL SOLUTION OF THE ATOMIC MIXING EQUATIONS, International journal of numerical modelling, 11(4), 1998, pp. 189-205
MEASUREMENT AND MODELING OF THE BULK PLASMA IN MAGNETRON SPUTTERING SOURCES
Authors: BRADLEY JW ARNELL RD ARMOUR DG
Citation: Jw. Bradley et al., MEASUREMENT AND MODELING OF THE BULK PLASMA IN MAGNETRON SPUTTERING SOURCES, Surface & coatings technology, 97(1-3), 1997, pp. 538-543
ELLIPSOMETRIC INVESTIGATION OF DAMAGE DISTRIBUTION IN LOW-ENERGY BORON IMPLANTATION OF SILICON
Authors: FUKAREK W MOLLER W HATZOPOULOS N ARMOUR DG VANDENBERG JA
Citation: W. Fukarek et al., ELLIPSOMETRIC INVESTIGATION OF DAMAGE DISTRIBUTION IN LOW-ENERGY BORON IMPLANTATION OF SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 879-883
SILICON NANOCRYSTAL FORMATION IN THIN THERMAL-OXIDE FILMS BY VERY-LOWENERGY SI-IMPLANTATION( ION)
Authors: NORMAND P TSOUKALAS D KAPETANAKIS E VANDENBERG JA ARMOUR DG STOEMENOS J
Citation: P. Normand et al., SILICON NANOCRYSTAL FORMATION IN THIN THERMAL-OXIDE FILMS BY VERY-LOWENERGY SI-IMPLANTATION( ION), Microelectronic engineering, 36(1-4), 1997, pp. 79-82
IN-SITU STUDY OF PROCESSES TAKING PLACE ON SILICON SURFACE DURING ITSBOMBARDMENT BY CFX AR IONS - ETCHING VERSUS POLYMERIZATION/
Authors: SIKOLA T ARMOUR DG VANDENBERG JA
Citation: T. Sikola et al., IN-SITU STUDY OF PROCESSES TAKING PLACE ON SILICON SURFACE DURING ITSBOMBARDMENT BY CFX AR IONS - ETCHING VERSUS POLYMERIZATION/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3156-3163
CHARGED-PARTICLE ENERGY SPECTROMETERS AND THEIR APPLICATIONS IN FUNDAMENTAL-STUDIES OF WAFER CHARGING AND ION-BEAM TUNING PHENOMENA
Authors: ENGLAND JG COOK CEA ARMOUR DG FOAD MA
Citation: Jg. England et al., CHARGED-PARTICLE ENERGY SPECTROMETERS AND THEIR APPLICATIONS IN FUNDAMENTAL-STUDIES OF WAFER CHARGING AND ION-BEAM TUNING PHENOMENA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 39-42
THE TREATMENT AND THE SOLUTION OF THE MIXING EQUATIONS WITH COMPOSITION DEPENDENT ATOMIC VOLUMES
Authors: BADHEKA R WADSWORTH M ARMOUR DG VANDENBERG JA
Citation: R. Badheka et al., THE TREATMENT AND THE SOLUTION OF THE MIXING EQUATIONS WITH COMPOSITION DEPENDENT ATOMIC VOLUMES, Radiation effects and defects in solids, 130, 1994, pp. 513-524
ION-BEAM DEPOSITION
Authors: ARMOUR DG
Citation: Dg. Armour, ION-BEAM DEPOSITION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 89(1-4), 1994, pp. 325-331
OSCILLATORY EVOLUTION OF AN ION-BOMBARDED INSB(100) SURFACE
Authors: EVDOKIMOV IN VALIZADEH R ARMOUR DG RICHARDSON NV MCCONVILLE CF
Citation: In. Evdokimov et al., OSCILLATORY EVOLUTION OF AN ION-BOMBARDED INSB(100) SURFACE, Surface science, 318(3), 1994, pp. 281-288
PERFORMANCE OF MASS-ANALYZED, LOW-ENERGY, DUAL-ION BEAM SYSTEM FOR MATERIALS RESEARCH
Authors: ALBAYATI AH MARTON D TODOROV SS BOYD KJ RABALAIS JW ARMOUR DG GORDON JS DULLER G
Citation: Ah. Albayati et al., PERFORMANCE OF MASS-ANALYZED, LOW-ENERGY, DUAL-ION BEAM SYSTEM FOR MATERIALS RESEARCH, Review of scientific instruments, 65(8), 1994, pp. 2680-2692
THEORETICAL CALCULATIONS OF THE BROADENING OF DILUTE SI, AL AND BE DOPED-DELTA - LAYERS IN GA AS DURING SIMS DEPTH PROFILING (VOL 44, PG 331, 1993)/
Authors: BADHEKA R VANDENBERG JA ARMOUR DG WADSWORTH M
Citation: R. Badheka et al., THEORETICAL CALCULATIONS OF THE BROADENING OF DILUTE SI, AL AND BE DOPED-DELTA - LAYERS IN GA AS DURING SIMS DEPTH PROFILING (VOL 44, PG 331, 1993)/, Vacuum, 44(10), 1993, pp. 1073-1073
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