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Results:
1-11
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Results: 11
Authors:
SARAVANAN S
JEGANATHAN K
AROKIARAJ J
BASKAR K
RAMASAMY P
JIMBO T
SOGA T
UMENO M
Citation: S. Saravanan et al., OPTICAL AND STRUCTURAL QUALITY OF GAAS EPILAYERS FROM GALLIUM, BISMUTH MIXED-SOLVENTS BY LIQUID-PHASE EPITAXY, JPN J A P 1, 37(5A), 1998, pp. 2598-2601
Authors:
SARAVANAN S
AROKIARAJ J
JIMBO T
SOGA T
UMENO M
Citation: S. Saravanan et al., INVESTIGATIONS OF A RAPID THERMAL ANNEALED AL0.15GA0.85AS SI STRUCTURE/, JPN J A P 2, 37(5A), 1998, pp. 496-498
Authors:
ARULKUMARAN S
AROKIARAJ J
DHARMARASU N
KUMAR J
MAGUDAPATHY P
NAIR KGM
Citation: S. Arulkumaran et al., CURRENT-VOLTAGE CHARACTERISTICS OF LOW-ENERGY PROTON AND ALPHA-PARTICLE IRRADIATED AU AND AG N-GAAS SCHOTTKY-BARRIER DIODES/, Solid-state electronics, 41(5), 1997, pp. 802-805
Authors:
ARULKUMARAN S
AROKIARAJ J
DHARMARASU N
KUMAR J
Citation: S. Arulkumaran et al., ON THE ENHANCEMENT OF EFFECTIVE BARRIER HEIGHT IN TI N-GAAS SCHOTTKY-BARRIER DIODES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 119(4), 1996, pp. 519-522
Authors:
ARULKUMARAN S
AROKIARAJ J
UDHAYASANKAR M
KUMAR J
KANJILAL D
Citation: S. Arulkumaran et al., ELECTRICAL CHARACTERISTICS OF 100 MEV SI-28 IMPLANTED LEC GROWN GAAS(100), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 117(3), 1996, pp. 243-248
Authors:
ARULKUMARAN S
AROKIARAJ J
UDHAYASANKAR M
SANTHANARAGHAVAN P
KUMAR J
RAMASAMY P
Citation: S. Arulkumaran et al., INVESTIGATIONS ON AU, AG, AND AL SCHOTTKY DIODES ON LIQUID ENCAPSULATED CZOCHRALSKI-GROWN N-GAAS[100], Journal of electronic materials, 24(7), 1995, pp. 813-817
Authors:
AROKIARAJ J
ARULKUMARAN S
DHARMARASU N
KUMAR J
Citation: J. Arokiaraj et al., ANNEALING BEHAVIOR OF 1 MEV HYDROGEN-IMPLANTED LEC GROWN INP[100], Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 101(3), 1995, pp. 240-242
Authors:
UDHAYASANKAR M
ARULKUMARAN S
AROKIARAJ J
SANTHANARAGHAVAN P
SUNDARAKANNAN B
KUMAR J
RAMASAMY P
NAIR KGM
MAGUDAPATHY P
THAMPI NS
KRISHAN K
Citation: M. Udhayasankar et al., EFFECT OF IRRADIATION ON THE MICROHARDNESS OF THE LEC GROWN SEMIINSULATING GAAS SINGLE-CRYSTALS, Journal of nuclear materials, 225, 1995, pp. 314-317
Authors:
AROKIARAJ J
ARULKUMARAN S
UDHAYSANKAR M
SANTHANARAGHAVAN P
KUMAR J
RAMASAMY P
NAIR KGM
MAGUDAPATHY P
THAMPI NS
KRISHAN K
Citation: J. Arokiaraj et al., STRUCTURAL AND MECHANICAL-PROPERTIES OF ION-IMPLANTED GAAS AND INP SINGLE-CRYSTALS GROWN BY THE LIQUID ENCAPSULATED CZOCHRALSKI TECHNIQUE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 461-464
Authors:
SANTHANARAGHAVAN P
SANKARANARAYANAN K
AROKIARAJ J
ANBUKUMAR S
KUMAR J
RAMASAMY P
Citation: P. Santhanaraghavan et al., THERMAL CYCLING, DLTS, AND PEC STUDIES ON LEC GALLIUM-ARSENIDE, Crystal research and technology, 29(2), 1994, pp. 223-228
Authors:
SANTHANARAGHAVAN P
SANKARANARAYANAN K
AROKIARAJ J
ANBUKUMAR S
KUMAR J
RAMASAMY P
Citation: P. Santhanaraghavan et al., PHOTOLUMINESCENCE INVESTIGATIONS ON LIQUID ENCAPSULATED CZOCHRALSKI-GROWN GALLIUM-ARSENIDE, Physica status solidi. a, Applied research, 142(2), 1994, pp. 521-526
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1-11
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