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Results: 1-25 | 26-45
Results: 1-25/45
GROWTH OF EPITAXIAL CO LAYERS ON SB-PASSIVATED GAAS(110) SUBSTRATES
Authors: TEODORESCU CM CHROST J ASCOLANI H AVILA J SORIA F ASENSIO MC
Citation: Cm. Teodorescu et al., GROWTH OF EPITAXIAL CO LAYERS ON SB-PASSIVATED GAAS(110) SUBSTRATES, Surface review and letters, 5(1), 1998, pp. 279-283
INITIAL-STAGE OF THE GROWTH OF FE ON SI(111)(1X1)-H
Authors: MARTIN MG AVILA J GRUYTERS M TEODORESCU C DUMAS P CHABAL YJ ASENSIO MC
Citation: Mg. Martin et al., INITIAL-STAGE OF THE GROWTH OF FE ON SI(111)(1X1)-H, Applied surface science, 123, 1998, pp. 156-160
STRUCTURAL DETERMINATION FOR H2O ADSORPTION ON SI(001)2X1 USING SCANNED-ENERGY MODE PHOTOELECTRON DIFFRACTION
Authors: FRANCO N CHROST J AVILA J ASENSIO MC MULLER C DUDZIK E PATCHETT AJ MCGOVERN IT GIEBEL T LINDSAY R FRITZSCHE V BRADSHAW AM WOODRUFF DP
Citation: N. Franco et al., STRUCTURAL DETERMINATION FOR H2O ADSORPTION ON SI(001)2X1 USING SCANNED-ENERGY MODE PHOTOELECTRON DIFFRACTION, Applied surface science, 123, 1998, pp. 219-222
SB ON GAAS(110) STRUCTURE STUDIED BY DIRECT-METHODS AND CHEMICAL-SHIFT PHOTOELECTRON DIFFRACTION
Authors: ASCOLANI H AVILA J FRANCO N ASENSIO MC
Citation: H. Ascolani et al., SB ON GAAS(110) STRUCTURE STUDIED BY DIRECT-METHODS AND CHEMICAL-SHIFT PHOTOELECTRON DIFFRACTION, Applied surface science, 123, 1998, pp. 223-227
SURFACE-CHARGE DENSITY WAVES AT SN GE(111)
Authors: LELAY G ARISTOV VY BOSTROM O LAYET JM ASENSIO MC AVILA J HUTTEL Y CRICENTI A
Citation: G. Lelay et al., SURFACE-CHARGE DENSITY WAVES AT SN GE(111), Applied surface science, 123, 1998, pp. 440-444
PHASE-TRANSITION OF SUBMONOLAYER PB GE(111) - ALPHA-ROOT-X-ROOT-R30-DEGREES[--]3X3 AT SIMILAR-TO-250 K/
Authors: AVILA J MASCARAQUE A MICHEL EG ASENSIO MC
Citation: J. Avila et al., PHASE-TRANSITION OF SUBMONOLAYER PB GE(111) - ALPHA-ROOT-X-ROOT-R30-DEGREES[--]3X3 AT SIMILAR-TO-250 K/, Applied surface science, 123, 1998, pp. 626-630
SURFACE PHASE-TRANSITIONS OF GE(100) FROM TEMPERATURE-DEPENDENT VALENCE-BAND PHOTOEMISSION
Authors: LAINE AD DESETA M CEPEK C VANDRE S GOLDONI A FRANCO N AVILA J ASENSIO MC SANCROTTI M
Citation: Ad. Laine et al., SURFACE PHASE-TRANSITIONS OF GE(100) FROM TEMPERATURE-DEPENDENT VALENCE-BAND PHOTOEMISSION, Physical review. B, Condensed matter, 57(23), 1998, pp. 14654-14657
FERMI-SURFACE AND ELECTRONIC-STRUCTURE OF PB GE(111)/
Authors: MASCARAQUE A AVILA J MICHEL EG ASENSIO MC
Citation: A. Mascaraque et al., FERMI-SURFACE AND ELECTRONIC-STRUCTURE OF PB GE(111)/, Physical review. B, Condensed matter, 57(23), 1998, pp. 14758-14765
EVIDENCE FOR A 2ND ONE-DIMENSIONAL SET OF STATES SHEDDING LIGHT ON THE NORMAL-PHASE OF HIGH-T-C SUPERCONDUCTORS
Authors: SAINI NL AVILA J ASENSIO MC TAJIMA S GU GD KOSHIZUKA N LANZARA A BIANCONI A
Citation: Nl. Saini et al., EVIDENCE FOR A 2ND ONE-DIMENSIONAL SET OF STATES SHEDDING LIGHT ON THE NORMAL-PHASE OF HIGH-T-C SUPERCONDUCTORS, Physical review. B, Condensed matter, 57(18), 1998, pp. 11101-11104
SEMICONDUCTOR-METAL TRANSITION OF THE SINGLE-DOMAIN K SI(100)-(2X1) INTERFACE BY FERMI-SURFACE DETERMINATION/
Authors: MARTINGAGO JA ASENSIO MC AEBI P FASEL R NAUMOVIC D OSTERWALDER J REFOLIO MC LOPEZSANCHO JM RUBIO J
Citation: Ja. Martingago et al., SEMICONDUCTOR-METAL TRANSITION OF THE SINGLE-DOMAIN K SI(100)-(2X1) INTERFACE BY FERMI-SURFACE DETERMINATION/, Physical review. B, Condensed matter, 57(15), 1998, pp. 9201-9207
AUGER-ELECTRON DIFFRACTION STUDY OF V FE(100) INTERFACE FORMATION/
Authors: HUTTEL Y AVILA J ASENSIO MC BENCOK P RICHTER C ILAKOVAC V HECKMANN O HRICOVINI K
Citation: Y. Huttel et al., AUGER-ELECTRON DIFFRACTION STUDY OF V FE(100) INTERFACE FORMATION/, Surface science, 404(1-3), 1998, pp. 609-613
BAND-STRUCTURE AND GAP OPENING IN PB GE(111)
Authors: MASCARAQUE A AVILA J ASENSIO MC MICHEL EG
Citation: A. Mascaraque et al., BAND-STRUCTURE AND GAP OPENING IN PB GE(111), Surface science, 404(1-3), 1998, pp. 742-745
SURFACE PHASE-TRANSITIONS OF GE(100) STUDIED VIA VALENCE-BAND PHOTOEMISSION
Authors: LAINE AD DESETA M CEPEK C VANDRE S GOLDONI A FRANCO N AVILA J ASENSIO MC SANCROTTI M
Citation: Ad. Laine et al., SURFACE PHASE-TRANSITIONS OF GE(100) STUDIED VIA VALENCE-BAND PHOTOEMISSION, Surface science, 404(1-3), 1998, pp. 871-874
PHOTOEMISSION OF GE(110) AT ROOM AND HIGH-TEMPERATURE
Authors: LAINE AD CEPEK C GOLDONI A VANDRE S DESETA M FRANCO M AVILA J ASENSIO MC SANCROTTI M
Citation: Ad. Laine et al., PHOTOEMISSION OF GE(110) AT ROOM AND HIGH-TEMPERATURE, Surface science, 404(1-3), 1998, pp. 875-879
PHOTOELECTRON DIFFRACTION INVESTIGATION OF STRAINED INGAAS GROWN ON (001)-GAAS
Authors: PROIETTI MG TURCHINI S GARCIA J ASENSIO MC CASADO C MARTELLI F PROSPERI T
Citation: Mg. Proietti et al., PHOTOELECTRON DIFFRACTION INVESTIGATION OF STRAINED INGAAS GROWN ON (001)-GAAS, Journal de physique. IV, 7(C2), 1997, pp. 575-576
ELECTRONIC BAND-STRUCTURE OF EPSILON-FESI(100)
Authors: CASTRO GR ALVAREZ J DAVILA ME ASENSIO MC MICHEL EG
Citation: Gr. Castro et al., ELECTRONIC BAND-STRUCTURE OF EPSILON-FESI(100), Journal of physics. Condensed matter, 9(8), 1997, pp. 1871-1876
STRUCTURE DETERMINATION OF SI(100)(2X1) NH2 USING SCANNED-ENERGY MODEPHOTOELECTRON DIFFRACTION/
Authors: FRANCO N AVILA J DAVILA ME ASENSIO MC WOODRUFF DP
Citation: N. Franco et al., STRUCTURE DETERMINATION OF SI(100)(2X1) NH2 USING SCANNED-ENERGY MODEPHOTOELECTRON DIFFRACTION/, Journal of physics. Condensed matter, 9(40), 1997, pp. 8419-8432
EVIDENCE FOR A STRIPED PHASE OF HIGH T-C SUPERCONDUCTOR AT THE FERMI-SURFACE
Authors: SAINI NL AVILA J ASENSIO MC TAJIMA S GU GD KOSHIZUKA N VALLETTA A LANZARA A BIANCONI A
Citation: Nl. Saini et al., EVIDENCE FOR A STRIPED PHASE OF HIGH T-C SUPERCONDUCTOR AT THE FERMI-SURFACE, Zeitschrift fur Physik. B, Condensed matter, 104(4), 1997, pp. 703-706
SURFACE COORDINATION OF ADATOMS BY SCANNED LOW-ENERGY PHOTOELECTRON DIFFRACTION
Authors: ASENSIO MC
Citation: Mc. Asensio, SURFACE COORDINATION OF ADATOMS BY SCANNED LOW-ENERGY PHOTOELECTRON DIFFRACTION, Surface review and letters, 4(2), 1997, pp. 295-305
CE L-III-EDGE X-RAY-ABSORPTION AND CE RESONANT PHOTOEMISSION-STUDIES OF NEW TERNARY COMPOUNDS CE2NI2X AND CE2PD2.04X0.96 (X = IN, SN)
Authors: FOURGEOT F DEMOURGUES A AVILA J ASENSIO MC CHEVALIER B
Citation: F. Fourgeot et al., CE L-III-EDGE X-RAY-ABSORPTION AND CE RESONANT PHOTOEMISSION-STUDIES OF NEW TERNARY COMPOUNDS CE2NI2X AND CE2PD2.04X0.96 (X = IN, SN), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 133(1-4), 1997, pp. 127-133
ATOMIC-STRUCTURE OF THE REACTIVE FE SI(111)7X7 INTERFACE/
Authors: MASCARAQUE A AVILA J TEODORESCU C ASENSIO MC MICHEL EG
Citation: A. Mascaraque et al., ATOMIC-STRUCTURE OF THE REACTIVE FE SI(111)7X7 INTERFACE/, Physical review. B, Condensed matter, 55(12), 1997, pp. 7315-7318
FE SI(111) INTERFACE FORMATION STUDIED BY PHOTOELECTRON DIFFRACTION/
Authors: AVILA J MASCARAQUE A TEODORESCU C MICHEL EG ASENSIO MC
Citation: J. Avila et al., FE SI(111) INTERFACE FORMATION STUDIED BY PHOTOELECTRON DIFFRACTION/, Surface science, 377(1-3), 1997, pp. 856-860
ADSORPTION OF C-60 ON SI(111)ROOT-3X-ROOT-3R(30-DEGREES)-AG
Authors: LELAY G GOTHELID M ARISTOV VY CRICENTI A HAKANSSON MC GIAMMICHELE C PERFETTI P AVILA J ASENSIO MC
Citation: G. Lelay et al., ADSORPTION OF C-60 ON SI(111)ROOT-3X-ROOT-3R(30-DEGREES)-AG, Surface science, 377(1-3), 1997, pp. 1061-1065
LOCAL-STRUCTURE OF NH2 ON SI(100)-(2X1) AND ITS EFFECT ON THE ASYMMETRY OF THE SI SURFACE DIMERS
Authors: FRANCO N AVILA J DAVILA ME ASENSIO MC WOODRUFF DP SCHAFF O FERNANDEZ V SCHINDLER KM FRITZSCHE V BRADSHAW AM
Citation: N. Franco et al., LOCAL-STRUCTURE OF NH2 ON SI(100)-(2X1) AND ITS EFFECT ON THE ASYMMETRY OF THE SI SURFACE DIMERS, Physical review letters, 79(4), 1997, pp. 673-676
TOPOLOGY OF THE PSEUDOGAP AND SHADOW BANDS IN BI2SR2CACU2O8+DELTA AT OPTIMUM DOPING
Authors: SAINI NL AVILA J BIANCONI A LANZARA A ASENSIO MC TAJIMA S GU GD KOSHIZUKA N
Citation: Nl. Saini et al., TOPOLOGY OF THE PSEUDOGAP AND SHADOW BANDS IN BI2SR2CACU2O8+DELTA AT OPTIMUM DOPING, Physical review letters, 79(18), 1997, pp. 3467-3470
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