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Results: 1-15 |
Results: 15
DIFFERENTIATION OF CORYNEBACTERIUM-AMYCOLATUM, CORYNEBACTERIUM-MINUTISSIMUM, AND CORYNEBACTERIUM-STRIATUM BY CARBON SUBSTRATE ASSIMILATION TESTS
Authors: RENAUD FNR DUTAUR M DAOUD S AUBEL D RIEGEL P MONGET D FRENEY J
Citation: Fnr. Renaud et al., DIFFERENTIATION OF CORYNEBACTERIUM-AMYCOLATUM, CORYNEBACTERIUM-MINUTISSIMUM, AND CORYNEBACTERIUM-STRIATUM BY CARBON SUBSTRATE ASSIMILATION TESTS, Journal of clinical microbiology (Print), 36(12), 1998, pp. 3698-3702
A C 1S CORE-LEVEL X-RAY PHOTOELECTRON DIFFRACTION CHARACTERIZATION OFSUBSTITUTIONAL CARBON IN EPITAXIAL SI1-YCY ALLOYS GROWN ON SI(111) AND SI(001)
Authors: SIMON L AUBEL D KUBLER L BISCHOFF JL GEWINNER G BALLADORE JL
Citation: L. Simon et al., A C 1S CORE-LEVEL X-RAY PHOTOELECTRON DIFFRACTION CHARACTERIZATION OFSUBSTITUTIONAL CARBON IN EPITAXIAL SI1-YCY ALLOYS GROWN ON SI(111) AND SI(001), Journal of applied physics, 81(6), 1997, pp. 2635-2642
GENOMIC DIVERSITY OF SEVERAL CORYNEBACTERIUM SPECIES IDENTIFIED BY AMPLIFICATION OF THE 16S-23S RIBOSOMAL-RNA GENE SPACER REGIONS
Authors: AUBEL D RENAUD FNR FRENEY J
Citation: D. Aubel et al., GENOMIC DIVERSITY OF SEVERAL CORYNEBACTERIUM SPECIES IDENTIFIED BY AMPLIFICATION OF THE 16S-23S RIBOSOMAL-RNA GENE SPACER REGIONS, International journal of systematic bacteriology, 47(3), 1997, pp. 767-772
X-RAY PHOTOELECTRON DIFFRACTION INVESTIGATION OF CE SEGREGATION AND FILM MORPHOLOGY DURING FIRST STAGE HETEROEPITAXY OF SI ON GE(001)
Authors: AUBEL D KUBLER L BISCHOFF JL SIMON L BOLMONT D
Citation: D. Aubel et al., X-RAY PHOTOELECTRON DIFFRACTION INVESTIGATION OF CE SEGREGATION AND FILM MORPHOLOGY DURING FIRST STAGE HETEROEPITAXY OF SI ON GE(001), Applied surface science, 99(2), 1996, pp. 169-183
PHONON STRAIN-SHIFT COEFFICIENTS OF SI1-XGEX GROWN ON GE(001)
Authors: STOEHR M AUBEL D JUILLAGUET S BISCHOFF JL KUBLER L BOLMONT D HAMDANI F FRAISSE B FOURCADE R
Citation: M. Stoehr et al., PHONON STRAIN-SHIFT COEFFICIENTS OF SI1-XGEX GROWN ON GE(001), Physical review. B, Condensed matter, 53(11), 1996, pp. 6923-6926
IDENTIFICATION OF TURICELLA-OTITIDIS ISOLATED FROM A PATIENT WITH OTORRHEA ASSOCIATED WITH SURGERY - DIFFERENTIATION FROM CORYNEBACTERIUM-AFERMENTANS AND CORYNEBACTERIUM-AURIS
Authors: RENAUD FNR GREGORY A BARREAU C AUBEL D FRENEY J
Citation: Fnr. Renaud et al., IDENTIFICATION OF TURICELLA-OTITIDIS ISOLATED FROM A PATIENT WITH OTORRHEA ASSOCIATED WITH SURGERY - DIFFERENTIATION FROM CORYNEBACTERIUM-AFERMENTANS AND CORYNEBACTERIUM-AURIS, Journal of clinical microbiology, 34(10), 1996, pp. 2625-2627
GE SEGREGATION TESTED BY X-RAY PHOTOELECTRON DIFFRACTION AND SURFACE ATOM TITRATION DURING THE FIRST STAGE OF SI HETEROEPITAXY ON GE(001)2 X-1
Authors: AUBEL D KUBLER L BISCHOFF JL BOLMONT D
Citation: D. Aubel et al., GE SEGREGATION TESTED BY X-RAY PHOTOELECTRON DIFFRACTION AND SURFACE ATOM TITRATION DURING THE FIRST STAGE OF SI HETEROEPITAXY ON GE(001)2 X-1, Surface science, 352, 1996, pp. 634-640
CONSTRUCTION OF HERMES SHUTTLE VECTORS - A VERSATILE SYSTEM USEFUL FOR GENETIC COMPLEMENTATION OF TRANSFORMABLE AND NON-TRANSFORMABLE NEISSERIA MUTANTS
Authors: KUPSCH EM AUBEL D GIBBS CP KAHRS AF RUDEL T MEYER TF
Citation: Em. Kupsch et al., CONSTRUCTION OF HERMES SHUTTLE VECTORS - A VERSATILE SYSTEM USEFUL FOR GENETIC COMPLEMENTATION OF TRANSFORMABLE AND NON-TRANSFORMABLE NEISSERIA MUTANTS, MGG. Molecular & general genetics, 250(5), 1996, pp. 558-569
OBSERVATION OF SI OUT-DIFFUSION RELATED DEFECTS IN SIC GROWTH ON SI(001)
Authors: DIANI M MESLI A KUBLER L CLAVERIE A BALLADORE JL AUBEL D PEYRE S HEISER T BISCHOFF JL
Citation: M. Diani et al., OBSERVATION OF SI OUT-DIFFUSION RELATED DEFECTS IN SIC GROWTH ON SI(001), Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 110-113
SELECTIVE THERMAL - AS OPPOSED TO NONSELECTIVE PLASMA - NITRIDATION OF SI-GE RELATED MATERIALS EXAMINED BY IN-SITU PHOTOEMISSION TECHNIQUES
Authors: AUBEL D DIANI M KUBLER L BISCHOFF JL BOLMONT D
Citation: D. Aubel et al., SELECTIVE THERMAL - AS OPPOSED TO NONSELECTIVE PLASMA - NITRIDATION OF SI-GE RELATED MATERIALS EXAMINED BY IN-SITU PHOTOEMISSION TECHNIQUES, Journal of non-crystalline solids, 187, 1995, pp. 319-323
A PARTICULAR EPITAXIAL SI1-YCY ALLOY GROWTH MODE ON SI(001) EVIDENCEDBY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY
Authors: CLAVERIE A FAURE J BALLADORE JL SIMON L MESLI A DIANI M KUBLER L AUBEL D
Citation: A. Claverie et al., A PARTICULAR EPITAXIAL SI1-YCY ALLOY GROWTH MODE ON SI(001) EVIDENCEDBY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY, Journal of crystal growth, 157(1-4), 1995, pp. 420-425
IN-SITU SURFACE TECHNIQUE ANALYSES AND EX-SITU CHARACTERIZATION OF SI1-XGEX EPILAYERS GROWN ON SI(001)-2X1 BY MOLECULAR-BEAM EPITAXY
Authors: AUBEL D DIANI M STOEHR M BISCHOFF JL KUBLER L BOLMONT D FRAISSE B FOURCADE R MULLER D
Citation: D. Aubel et al., IN-SITU SURFACE TECHNIQUE ANALYSES AND EX-SITU CHARACTERIZATION OF SI1-XGEX EPILAYERS GROWN ON SI(001)-2X1 BY MOLECULAR-BEAM EPITAXY, Journal de physique. III, 4(4), 1994, pp. 733-740
STRICT THERMAL NITRIDATION SELECTIVITY BETWEEN SI AND GE USED AS A CHEMICAL PROBE OF THE OUTERMOST LAYER OF SI1-XGEX ALLOYS AND GE SI(001) OR SI/GE(001) HETEROSTRUCTURES/
Authors: AUBEL D DIANI M BISCHOFF JL BOLMONT D KUBLER L
Citation: D. Aubel et al., STRICT THERMAL NITRIDATION SELECTIVITY BETWEEN SI AND GE USED AS A CHEMICAL PROBE OF THE OUTERMOST LAYER OF SI1-XGEX ALLOYS AND GE SI(001) OR SI/GE(001) HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2699-2704
ELECTRON-CYCLOTRON-RESONANCE PLASMA ION-BEAM EFFECTS ON THE FORMATIONOF SIC ON SI(001) CHARACTERIZED BY IN-SITU PHOTOEMISSION
Authors: DIANI M AUBEL D BISCHOFF JL KUBLER L BOLMONT D
Citation: M. Diani et al., ELECTRON-CYCLOTRON-RESONANCE PLASMA ION-BEAM EFFECTS ON THE FORMATIONOF SIC ON SI(001) CHARACTERIZED BY IN-SITU PHOTOEMISSION, Thin solid films, 241(1-2), 1994, pp. 305-309
THE GE STRANSKI-KRASTANOV GROWTH MODE ON SI(001)(2X1) TESTED BY X-RAYPHOTOELECTRON AND AUGER-ELECTRON DIFFRACTION
Authors: DIANI M AUBEL D BISCHOFF JL KUBLER L BOLMONT D
Citation: M. Diani et al., THE GE STRANSKI-KRASTANOV GROWTH MODE ON SI(001)(2X1) TESTED BY X-RAYPHOTOELECTRON AND AUGER-ELECTRON DIFFRACTION, Surface science, 291(1-2), 1993, pp. 110-116
Risultati: 1-15 |