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Results: 1-22 |
Results: 22
COULOMB OSCILLATIONS IN FEW-ELECTRON QUANTUM-DOT
Authors: KOUWENHOVEN LP OOSTERKAMP TH TARUCHA S AUSTING DG HONDA T
Citation: Lp. Kouwenhoven et al., COULOMB OSCILLATIONS IN FEW-ELECTRON QUANTUM-DOT, Physica. B, Condensed matter, 251, 1998, pp. 191-196
QUANTUM-DOT MOLECULES
Authors: AUSTING DG HONDA T MURAKI K TOKURA Y TARUCHA S
Citation: Dg. Austing et al., QUANTUM-DOT MOLECULES, Physica. B, Condensed matter, 251, 1998, pp. 206-209
MANY-BODY EFFECT IN AN ARTIFICIAL ATOM
Authors: TOKURA Y KOUWENHOVEN LP AUSTING DG TARUCHA S
Citation: Y. Tokura et al., MANY-BODY EFFECT IN AN ARTIFICIAL ATOM, Physica. B, Condensed matter, 246, 1998, pp. 83-87
GATE PERFORMANCE IN RESONANT-TUNNELING SINGLE-ELECTRON TRANSISTOR
Authors: HONDA T TARUCHA S AUSTING DG
Citation: T. Honda et al., GATE PERFORMANCE IN RESONANT-TUNNELING SINGLE-ELECTRON TRANSISTOR, IEICE transactions on electronics, E81C(1), 1998, pp. 2-7
ELECTRON-TRANSPORT IN MIS-LIKE GAAS ALXGA1-XAS HETEROSTRUCTURES WITH NANOSTRUCTURED GATES/
Authors: HERFORT J AUSTING DG HIRAYAMA Y
Citation: J. Herfort et al., ELECTRON-TRANSPORT IN MIS-LIKE GAAS ALXGA1-XAS HETEROSTRUCTURES WITH NANOSTRUCTURED GATES/, Solid-state electronics, 42(7-8), 1998, pp. 1135-1139
ATOMIC-LIKE PROPERTIES OF SEMICONDUCTOR QUANTUM DOTS
Authors: TARUCHA S AUSTING DG HONDA T VANDERHAGE R KOUWENHOVEN LP
Citation: S. Tarucha et al., ATOMIC-LIKE PROPERTIES OF SEMICONDUCTOR QUANTUM DOTS, JPN J A P 1, 36(6B), 1997, pp. 3917-3923
VERTICAL SINGLE-ELECTRON TRANSISTORS WITH SEPARATE GATES
Authors: AUSTING DG HONDA T TARUCHA S
Citation: Dg. Austing et al., VERTICAL SINGLE-ELECTRON TRANSISTORS WITH SEPARATE GATES, JPN J A P 1, 36(6B), 1997, pp. 4151-4155
GAAS ALGAAS/INGAAS VERTICAL TRIPLE BARRIER SINGLE-ELECTRON TRANSISTORS/
Authors: AUSTING DG HONDA T TARUCHA S
Citation: Dg. Austing et al., GAAS ALGAAS/INGAAS VERTICAL TRIPLE BARRIER SINGLE-ELECTRON TRANSISTORS/, JPN J A P 1, 36(3B), 1997, pp. 1667-1671
MULTIPLE-GATED SUBMICRON VERTICAL TUNNELING STRUCTURES
Authors: AUSTING DG HONDA T TARUCHA S
Citation: Dg. Austing et al., MULTIPLE-GATED SUBMICRON VERTICAL TUNNELING STRUCTURES, Semiconductor science and technology, 12(5), 1997, pp. 631-636
QUASI-ONE-DIMENSIONAL ELECTRON GASES IN A GATED UNDOPED GAAS ALXGA1-XAS HETEROSTRUCTURE/
Authors: HERFORT J AUSTING DG HIRAYAMA Y
Citation: J. Herfort et al., QUASI-ONE-DIMENSIONAL ELECTRON GASES IN A GATED UNDOPED GAAS ALXGA1-XAS HETEROSTRUCTURE/, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, 1997, pp. 69-74
EXCITATION-SPECTRA OF CIRCULAR, FEW-ELECTRON QUANTUM DOTS
Authors: KOUWENHOVEN LP OOSTERKAMP TH DANOESASTRO MWS ETO M AUSTING DG HONDA T TARUCHA S
Citation: Lp. Kouwenhoven et al., EXCITATION-SPECTRA OF CIRCULAR, FEW-ELECTRON QUANTUM DOTS, Science, 278(5344), 1997, pp. 1788-1792
FIELD EFFECT-INDUCED QUASI-ONE-DIMENSIONAL ELECTRON-TRANSPORT IN GAASALXGA1-XAS HETEROSTRUCTURES/
Authors: HERFORT J AUSTING DG HIRAYAMA Y
Citation: J. Herfort et al., FIELD EFFECT-INDUCED QUASI-ONE-DIMENSIONAL ELECTRON-TRANSPORT IN GAASALXGA1-XAS HETEROSTRUCTURES/, Journal of applied physics, 82(9), 1997, pp. 4384-4387
A NEW DESIGN FOR SUBMICRON DOUBLE-BARRIER RESONANT-TUNNELING TRANSISTORS
Authors: AUSTING DG HONDA T TARUCHA S
Citation: Dg. Austing et al., A NEW DESIGN FOR SUBMICRON DOUBLE-BARRIER RESONANT-TUNNELING TRANSISTORS, Semiconductor science and technology, 11(3), 1996, pp. 388-391
SINGLE-ELECTRON CHARGING AND SINGLE-ELECTRON TUNNELING IN SUBMICRON ALGAAS GAAS DOUBLE-BARRIER TRANSISTOR STRUCTURES/
Authors: AUSTING DG HONDA T TARUCHA S
Citation: Dg. Austing et al., SINGLE-ELECTRON CHARGING AND SINGLE-ELECTRON TUNNELING IN SUBMICRON ALGAAS GAAS DOUBLE-BARRIER TRANSISTOR STRUCTURES/, Solid-state electronics, 40(1-8), 1996, pp. 237-240
SHELL FILLING AND SPIN EFFECTS IN A FEW ELECTRON QUANTUM-DOT
Authors: TARUCHA S AUSTING DG HONDA T VANDERHAGE RJ KOUWENHOVEN LP
Citation: S. Tarucha et al., SHELL FILLING AND SPIN EFFECTS IN A FEW ELECTRON QUANTUM-DOT, Physical review letters, 77(17), 1996, pp. 3613-3616
SUBMICRON VERTICAL ALGAAS GAAS RESONANT-TUNNELING SINGLE-ELECTRON TRANSISTOR/
Authors: AUSTING DG HONDA T TOKURA Y TARUCHA S
Citation: Dg. Austing et al., SUBMICRON VERTICAL ALGAAS GAAS RESONANT-TUNNELING SINGLE-ELECTRON TRANSISTOR/, JPN J A P 1, 34(2B), 1995, pp. 1320-1325
RESONANT-TUNNELING SINGLE-ELECTRON TRANSISTORS
Authors: TARUCHA S AUSTING DG HONDA T
Citation: S. Tarucha et al., RESONANT-TUNNELING SINGLE-ELECTRON TRANSISTORS, Superlattices and microstructures, 18(2), 1995, pp. 121-129
THE PRESSURE-DEPENDENCE OF THE TUNNELING CURRENT IN SINGLE-BARRIER ALAS GAAS STRUCTURES/
Authors: AUSTING DG KLIPSTEIN PC ROBERTS JS HILL G
Citation: Dg. Austing et al., THE PRESSURE-DEPENDENCE OF THE TUNNELING CURRENT IN SINGLE-BARRIER ALAS GAAS STRUCTURES/, Semiconductor science and technology, 10(5), 1995, pp. 616-623
THE ROLE OF INTERFACE QUALITY IN RESONANT-TUNNELING BETWEEN TRANSVERSE X-STATES IN GAAS ALAS DOUBLE-BARRIER STRUCTURES PRESSURIZED BEYOND THE TYPE-II TRANSITION/
Authors: SMITH JM KLIPSTEIN PC AUSTING DG GREY R HILL G
Citation: Jm. Smith et al., THE ROLE OF INTERFACE QUALITY IN RESONANT-TUNNELING BETWEEN TRANSVERSE X-STATES IN GAAS ALAS DOUBLE-BARRIER STRUCTURES PRESSURIZED BEYOND THE TYPE-II TRANSITION/, Journal of physics and chemistry of solids, 56(3-4), 1995, pp. 475-479
INTERFACE EFFECTS, BAND OVERLAP AND THE SEMIMETAL TO SEMICONDUCTOR TRANSITION IN INAS GASB INTERBAND RESONANT-TUNNELING DIODES/
Authors: KHANCHEEMA UM KLIPSTEIN PC AUSTING DG SMITH JM MASON NJ WALKER PJ HILL G
Citation: Um. Khancheema et al., INTERFACE EFFECTS, BAND OVERLAP AND THE SEMIMETAL TO SEMICONDUCTOR TRANSITION IN INAS GASB INTERBAND RESONANT-TUNNELING DIODES/, Solid-state electronics, 37(4-6), 1994, pp. 977-979
TUNNELING RESONANCES AT HIGH-PRESSURE IN DOUBLE-BARRIER STRUCTURES WITH ALAS BARRIERS THICKER THAN 50-A-ANGSTROM
Authors: AUSTING DG KLIPSTEIN PC ROBERTS JS BUTTON CB HILL G
Citation: Dg. Austing et al., TUNNELING RESONANCES AT HIGH-PRESSURE IN DOUBLE-BARRIER STRUCTURES WITH ALAS BARRIERS THICKER THAN 50-A-ANGSTROM, Physical review. B, Condensed matter, 48(16), 1993, pp. 11905-11911
CAPACITANCE STUDIES OF CHARGE REDISTRIBUTION BETWEEN GAMMA-STATE AND X-STATE IN A GAAS ALAS DOUBLE-BARRIER STRUCTURE AT HIGH-PRESSURE/
Authors: AUSTING DG KLIPSTEIN PC ROBERTS JS HILL G
Citation: Dg. Austing et al., CAPACITANCE STUDIES OF CHARGE REDISTRIBUTION BETWEEN GAMMA-STATE AND X-STATE IN A GAAS ALAS DOUBLE-BARRIER STRUCTURE AT HIGH-PRESSURE/, Journal of applied physics, 74(12), 1993, pp. 7340-7343
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