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Results: 1-13 |
Results: 13
NUCLEATION MECHANISMS DURING MBE GROWTH OF LATTICE-MATCHED AND STRAINED III-V COMPOUND FILMS
Authors: JOYCE BA VVEDENSKY DD AVERY AR BELK JG DOBBS HT JONES TS
Citation: Ba. Joyce et al., NUCLEATION MECHANISMS DURING MBE GROWTH OF LATTICE-MATCHED AND STRAINED III-V COMPOUND FILMS, Applied surface science, 132, 1998, pp. 357-366
ISLAND NUCLEATION AND GROWTH ON RECONSTRUCTED GAAS(001) SURFACES
Authors: ITOH M BELL GR AVERY AR JONES TS JOYCE BA VVEDENSKY DD
Citation: M. Itoh et al., ISLAND NUCLEATION AND GROWTH ON RECONSTRUCTED GAAS(001) SURFACES, Physical review letters, 81(3), 1998, pp. 633-636
AN STM STUDY OF THE NATURE OF THE TRANSITIONAL PHASE OF THE GAAS(111)B SURFACE
Authors: AVERY AR TOK ES JONES TS
Citation: Ar. Avery et al., AN STM STUDY OF THE NATURE OF THE TRANSITIONAL PHASE OF THE GAAS(111)B SURFACE, Surface science, 376(1-3), 1997, pp. 397-402
NUCLEATION AND GROWTH OF ISLANDS ON GAAS-SURFACES
Authors: AVERY AR DOBBS HT HOLMES DM JOYCE BA VVEDENSKY DD
Citation: Ar. Avery et al., NUCLEATION AND GROWTH OF ISLANDS ON GAAS-SURFACES, Physical review letters, 79(20), 1997, pp. 3938-3941
STM STUDIES OF ISLAND FORMATION AND SURFACE ORDERING OF SI ON GAAS(001), GAAS(2X4) AND C(4X4) - IMPLICATIONS FOR DELTA-DOPING
Authors: SUDIJONO JL AVERY AR JOYCE BA JONES TS
Citation: Jl. Sudijono et al., STM STUDIES OF ISLAND FORMATION AND SURFACE ORDERING OF SI ON GAAS(001), GAAS(2X4) AND C(4X4) - IMPLICATIONS FOR DELTA-DOPING, Journal of materials science. Materials in electronics, 7(5), 1996, pp. 333-339
SITE OCCUPATION OF SI ATOMS DEPOSITED ON VICINAL GAAS(001)-(2X4) SURFACES
Authors: AVERY AR SUDIJONO JL JONES TS JOYCE BA
Citation: Ar. Avery et al., SITE OCCUPATION OF SI ATOMS DEPOSITED ON VICINAL GAAS(001)-(2X4) SURFACES, Applied surface science, 104, 1996, pp. 539-545
MECHANISM FOR DISORDER ON GAAS(001)-(2X4) SURFACES
Authors: AVERY AR GORINGE CM HOLMES DM SUDIJONO JL JONES TS
Citation: Ar. Avery et al., MECHANISM FOR DISORDER ON GAAS(001)-(2X4) SURFACES, Physical review letters, 76(18), 1996, pp. 3344-3347
THE LOCATION OF SILICON ATOMS AND THE INITIAL-STAGES OF FORMATION OF THE SI GAAS(001) INTERFACE STUDIED BY STM/
Authors: AVERY AR SUDIJONO JL JONES TS JOYCE BA
Citation: Ar. Avery et al., THE LOCATION OF SILICON ATOMS AND THE INITIAL-STAGES OF FORMATION OF THE SI GAAS(001) INTERFACE STUDIED BY STM/, Surface science, 340(1-2), 1995, pp. 57-70
THE AS-TERMINATED RECONSTRUCTIONS FORMED BY GAAS(001) - A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE (2X4) AND C(4X4) SURFACES
Authors: AVERY AR HOLMES DM SUDIJONO J JONES TS JOYCE BA
Citation: Ar. Avery et al., THE AS-TERMINATED RECONSTRUCTIONS FORMED BY GAAS(001) - A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE (2X4) AND C(4X4) SURFACES, Surface science, 323(1-2), 1995, pp. 91-101
A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE DEPOSITION OF SI ON GAAS(001) IMPLICATIONS FOR SI DELTA-DOPING
Authors: AVERY AR HOLMES DM SUDIJONO JL JONES TS FAHY MR JOYCE BA
Citation: Ar. Avery et al., A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE DEPOSITION OF SI ON GAAS(001) IMPLICATIONS FOR SI DELTA-DOPING, Journal of crystal growth, 150(1-4), 1995, pp. 202-208
SI-INDUCED ISLAND FORMATION AND SURFACE ORDERING ON GAAS(001)-C(4X4)
Authors: AVERY AR SUDIJONO J HOLMES DM JONES TS JOYCE BA
Citation: Ar. Avery et al., SI-INDUCED ISLAND FORMATION AND SURFACE ORDERING ON GAAS(001)-C(4X4), Applied physics letters, 66(23), 1995, pp. 3200-3202
ARSENIC-DEFICIENT GAAS(001)-(2X4) SURFACES - SCANNING-TUNNELING-MICROSCOPY EVIDENCE FOR LOCALLY DISORDERED (1X2) GA REGIONS
Authors: AVERY AR HOLMES DM JONES TS JOYCE BA BRIGGS GAD
Citation: Ar. Avery et al., ARSENIC-DEFICIENT GAAS(001)-(2X4) SURFACES - SCANNING-TUNNELING-MICROSCOPY EVIDENCE FOR LOCALLY DISORDERED (1X2) GA REGIONS, Physical review. B, Condensed matter, 50(11), 1994, pp. 8098-8101
CHEMISORPTION OF ORGANIC ADSORBATES ON SILICON AND GOLD STUDIED BY SCANNING-TUNNELING-MICROSCOPY
Authors: MAYNE AJ CATALDI TRI KNALL J AVERY AR JONES TS PINHEIRO L HILL HAO BRIGGS GAD PETHICA JB WEINBERG WH
Citation: Aj. Mayne et al., CHEMISORPTION OF ORGANIC ADSORBATES ON SILICON AND GOLD STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Faraday discussions, (94), 1992, pp. 199-212
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