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Results: 1-25 | 26-30
Results: 1-25/30
SILICON HYDRIDE COMPOSITION OF PLASMA-DEPOSITED HYDROGENATED AMORPHOUS AND NANOCRYSTALLINE SILICON FILMS AND SURFACES
Authors: MARRA DC EDELBERG EA NAONE RL AYDIL ES
Citation: Dc. Marra et al., SILICON HYDRIDE COMPOSITION OF PLASMA-DEPOSITED HYDROGENATED AMORPHOUS AND NANOCRYSTALLINE SILICON FILMS AND SURFACES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3199-3210
BOW TEMPERATURE PLASMA DEPOSITION OF SILICON-NITRIDE FROM SILANE AND NITROGEN PLASMAS
Authors: HANYALOGLU BF AYDIL ES
Citation: Bf. Hanyaloglu et Es. Aydil, BOW TEMPERATURE PLASMA DEPOSITION OF SILICON-NITRIDE FROM SILANE AND NITROGEN PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(5), 1998, pp. 2794-2803
MODELING OF SIO2 DEPOSITION IN HIGH-DENSITY PLASMA REACTORS AND COMPARISONS OF MODEL PREDICTIONS WITH EXPERIMENTAL MEASUREMENTS
Authors: MEEKS E LARSON RS HO P APBLETT C HAN SM EDELBERG E AYDIL ES
Citation: E. Meeks et al., MODELING OF SIO2 DEPOSITION IN HIGH-DENSITY PLASMA REACTORS AND COMPARISONS OF MODEL PREDICTIONS WITH EXPERIMENTAL MEASUREMENTS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 544-563
EFFECT OF H-2 DILUTION ON THE SURFACE-COMPOSITION OF PLASMA-DEPOSITEDSILICON FILMS FROM SIH4
Authors: MARRA DC EDELBERG EA NAONE RL AYDIL ES
Citation: Dc. Marra et al., EFFECT OF H-2 DILUTION ON THE SURFACE-COMPOSITION OF PLASMA-DEPOSITEDSILICON FILMS FROM SIH4, Applied surface science, 133(1-2), 1998, pp. 148-151
INCIDENCE ANGLE DISTRIBUTIONS OF IONS BOMBARDING GROUNDED SURFACES INHIGH-DENSITY PLASMA REACTORS
Authors: AYDIL ES QUINIOU BOM LEE JTC GREGUS JA GOTTSCHO RA
Citation: Es. Aydil et al., INCIDENCE ANGLE DISTRIBUTIONS OF IONS BOMBARDING GROUNDED SURFACES INHIGH-DENSITY PLASMA REACTORS, Solid-state electronics, 42(5), 1998, pp. 75-82
INTERACTIONS OF SIH RADICALS WITH SILICON SURFACES - AN ATOMIC-SCALE SIMULATION STUDY
Authors: RAMALINGAM S MAROUDAS D AYDIL ES
Citation: S. Ramalingam et al., INTERACTIONS OF SIH RADICALS WITH SILICON SURFACES - AN ATOMIC-SCALE SIMULATION STUDY, Journal of applied physics, 84(7), 1998, pp. 3895-3911
REASONS FOR LOWER DIELECTRIC-CONSTANT OF FLUORINATED SIO2-FILMS
Authors: HAN SM AYDIL ES
Citation: Sm. Han et Es. Aydil, REASONS FOR LOWER DIELECTRIC-CONSTANT OF FLUORINATED SIO2-FILMS, Journal of applied physics, 83(4), 1998, pp. 2172-2178
ATOMISTIC SIMULATION OF SIH INTERACTIONS WITH SILICON SURFACES DURINGDEPOSITION FROM SILANE CONTAINING PLASMAS
Authors: RAMALINGAM S MAROUDAS D AYDIL ES
Citation: S. Ramalingam et al., ATOMISTIC SIMULATION OF SIH INTERACTIONS WITH SILICON SURFACES DURINGDEPOSITION FROM SILANE CONTAINING PLASMAS, Applied physics letters, 72(5), 1998, pp. 578-580
STRUCTURE AND CHEMICAL-COMPOSITION OF FLUORINATED SIO2-FILMS DEPOSITED USING SIF4 O-2 PLASMAS/
Authors: HAN SM AYDIL ES
Citation: Sm. Han et Es. Aydil, STRUCTURE AND CHEMICAL-COMPOSITION OF FLUORINATED SIO2-FILMS DEPOSITED USING SIF4 O-2 PLASMAS/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(6), 1997, pp. 2893-2904
EFFECT OF H-2 ADDITION ON SURFACE-REACTIONS DURING CF4 H-2 PLASMA-ETCHING OF SILICON AND SILICON DIOXIDE FILMS/
Authors: MARRA DC AYDIL ES
Citation: Dc. Marra et Es. Aydil, EFFECT OF H-2 ADDITION ON SURFACE-REACTIONS DURING CF4 H-2 PLASMA-ETCHING OF SILICON AND SILICON DIOXIDE FILMS/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(5), 1997, pp. 2508-2517
PROBING PLASMA SURFACE INTERACTIONS
Authors: AYDIL ES GOTTSCHO RA
Citation: Es. Aydil et Ra. Gottscho, PROBING PLASMA SURFACE INTERACTIONS, Solid state technology, 40(10), 1997, pp. 181
LUMINESCENCE FROM PLASMA-DEPOSITED SILICON FILMS
Authors: EDELBERG E BERGH S NAONE R HALL M AYDIL ES
Citation: E. Edelberg et al., LUMINESCENCE FROM PLASMA-DEPOSITED SILICON FILMS, Journal of applied physics, 81(5), 1997, pp. 2410-2417
SILANOL CONCENTRATION DEPTH PROFILING DURING PLASMA DEPOSITION OF SIO2 USING MULTIPLE INTERNAL-REFLECTION INFRARED-SPECTROSCOPY
Authors: HAN SM AYDIL ES
Citation: Sm. Han et Es. Aydil, SILANOL CONCENTRATION DEPTH PROFILING DURING PLASMA DEPOSITION OF SIO2 USING MULTIPLE INTERNAL-REFLECTION INFRARED-SPECTROSCOPY, Journal of the Electrochemical Society, 144(11), 1997, pp. 3963-3967
DETECTION OF COMBINATIVE INFRARED-ABSORPTION BANDS IN THIN SILICON DIOXIDE FILMS
Authors: HAN SM AYDIL ES
Citation: Sm. Han et Es. Aydil, DETECTION OF COMBINATIVE INFRARED-ABSORPTION BANDS IN THIN SILICON DIOXIDE FILMS, Applied physics letters, 70(24), 1997, pp. 3269-3271
INVESTIGATION OF LOW-TEMPERATURE SIO2 PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: DESHMUKH SC AYDIL ES
Citation: Sc. Deshmukh et Es. Aydil, INVESTIGATION OF LOW-TEMPERATURE SIO2 PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 738-743
STUDY OF SURFACE-REACTIONS DURING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SIO2 FROM SIH4, O-2, AND AR PLASMA
Authors: HAN SM AYDIL ES
Citation: Sm. Han et Es. Aydil, STUDY OF SURFACE-REACTIONS DURING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SIO2 FROM SIH4, O-2, AND AR PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2062-2070
PLASMA AND SURFACE DIAGNOSTICS DURING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SIO2 FROM SIH4 O-2/AR DISCHARGES/
Authors: HAN SM AYDIL ES
Citation: Sm. Han et Es. Aydil, PLASMA AND SURFACE DIAGNOSTICS DURING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SIO2 FROM SIH4 O-2/AR DISCHARGES/, Thin solid films, 291, 1996, pp. 427-434
MODELING OF HEAT-TRANSPORT AND WAFER HEATING EFFECTS DURING PLASMA-ETCHING
Authors: TRETHEWAY D AYDIL ES
Citation: D. Tretheway et Es. Aydil, MODELING OF HEAT-TRANSPORT AND WAFER HEATING EFFECTS DURING PLASMA-ETCHING, Journal of the Electrochemical Society, 143(11), 1996, pp. 3674-3680
VISIBLE LUMINESCENCE FROM NANOCRYSTALLINE SILICON FILMS PRODUCED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: EDELBERG E BERGH S NAONE R HALL M AYDIL ES
Citation: E. Edelberg et al., VISIBLE LUMINESCENCE FROM NANOCRYSTALLINE SILICON FILMS PRODUCED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 68(10), 1996, pp. 1415-1417
REAL-TIME IN-SITU MONITORING OF SURFACES DURING GLOW-DISCHARGE PROCESSING - NH3 AND H-2 PLASMA PASSIVATION OF GAAS
Authors: AYDIL ES ZHOU ZH GOTTSCHO RA CHABAL YJ
Citation: Es. Aydil et al., REAL-TIME IN-SITU MONITORING OF SURFACES DURING GLOW-DISCHARGE PROCESSING - NH3 AND H-2 PLASMA PASSIVATION OF GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 258-267
INVESTIGATION OF SIO2 PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION THROUGH TETRAETHOXYSILANE USING ATTENUATED TOTAL-REFLECTION FOURIER-TRANSFORM INFRARED-SPECTROSCOPY
Authors: DESHMUKH SC AYDIL ES
Citation: Sc. Deshmukh et Es. Aydil, INVESTIGATION OF SIO2 PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION THROUGH TETRAETHOXYSILANE USING ATTENUATED TOTAL-REFLECTION FOURIER-TRANSFORM INFRARED-SPECTROSCOPY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(5), 1995, pp. 2355-2367
REAL-TIME MONITORING OF SURFACE-CHEMISTRY DURING PLASMA PROCESSING
Authors: AYDIL ES GOTTSCHO RA CHABAL YJ
Citation: Es. Aydil et al., REAL-TIME MONITORING OF SURFACE-CHEMISTRY DURING PLASMA PROCESSING, Pure and applied chemistry, 66(6), 1994, pp. 1381-1388
LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SIO2
Authors: DESHMUKH SC AYDIL ES
Citation: Sc. Deshmukh et Es. Aydil, LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SIO2, Applied physics letters, 65(25), 1994, pp. 3185-3187
AMMONIA PLASMA PASSIVATION OF GAAS IN DOWNSTREAM MICROWAVE AND RADIOFREQUENCY PARALLEL PLATE PLASMA REACTORS
Authors: AYDIL ES GIAPIS KP GOTTSCHO RA DONNELLY VM YOON E
Citation: Es. Aydil et al., AMMONIA PLASMA PASSIVATION OF GAAS IN DOWNSTREAM MICROWAVE AND RADIOFREQUENCY PARALLEL PLATE PLASMA REACTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 195-205
MULTIPLE STEADY-STATES IN ELECTRON-CYCLOTRON-RESONANCE PLASMA REACTORS
Authors: AYDIL ES GREGUS JA GOTTSCHO RA
Citation: Es. Aydil et al., MULTIPLE STEADY-STATES IN ELECTRON-CYCLOTRON-RESONANCE PLASMA REACTORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(6), 1993, pp. 2883-2892
Risultati: 1-25 | 26-30