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Results:
1-14
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Results: 14
Authors:
Berkowicz, E
Gershoni, D
Bahir, G
Lakin, E
Shilo, D
Zolotoyabko, E
Abare, AC
Denbaars, SP
Coldren, LA
Citation: E. Berkowicz et al., Measured and calculated radiative lifetime and optical absorption of InxGa1-xN/GaN quantum structures, PHYS REV B, 61(16), 2000, pp. 10994-11008
Authors:
Hansen, M
Abare, AC
Kozodoy, P
Katona, TM
Craven, MD
Speck, JS
Mishra, UK
Coldren, LA
DenBaars, SP
Citation: M. Hansen et al., Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes, MRS I J N S, 5, 2000, pp. NIL_17-NIL_22
Authors:
Abare, AC
Denbaars, SP
Coldren, LA
Citation: Ac. Abare et al., Distributed feedback laser diodes employing embedded dielectric gratings located above the active region, IEICE TR EL, E83C(4), 2000, pp. 560-563
Authors:
Ozgur, U
Bergmann, MJ
Casey, HC
Everitt, HO
Abare, AC
Keller, S
DenBaars, SP
Citation: U. Ozgur et al., Ultrafast optical characterization of carrier capture times in InxGa1-xN multiple quantum wells, APPL PHYS L, 77(1), 2000, pp. 109-111
Authors:
Hansen, M
Fini, P
Zhao, L
Abare, AC
Coldren, LA
Speck, JS
DenBaars, SP
Citation: M. Hansen et al., Improved characteristics of InGaN multiple-quantum-well laser diodes grownon laterally epitaxially overgrown GaN on sapphire, APPL PHYS L, 76(5), 2000, pp. 529-531
Authors:
Chichibu, SF
Abare, AC
Mack, MP
Minsky, MS
Deguchi, T
Cohen, D
Kozodoy, P
Fleischer, SB
Keller, S
Speck, JS
Bowers, JE
Hu, E
Mishra, UK
Coldren, LA
DenBaars, SP
Wada, K
Sota, T
Nakamura, S
Citation: Sf. Chichibu et al., Optical properties of InGaN quantum wells, MAT SCI E B, 59(1-3), 1999, pp. 298-306
Authors:
Berkowicz, E
Gershoni, D
Bahir, G
Abare, AC
DenBaars, SP
Coldren, LA
Citation: E. Berkowicz et al., Optical spectroscopy of InGaN/GaN quantum wells, PHYS ST S-B, 216(1), 1999, pp. 291-300
Authors:
Hansen, M
Abare, AC
Kozodoy, P
Katona, TM
Craven, MD
Speck, JS
Mishra, UK
Coldren, LA
DenBaars, SP
Citation: M. Hansen et al., Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes, PHYS ST S-A, 176(1), 1999, pp. 59-62
Authors:
Abare, AC
Hansen, M
Speck, JS
DenBaars, SP
Coldren, LA
Citation: Ac. Abare et al., Electrically pumped distributed feedback nitride lasers employing embeddeddielectric gratings, ELECTR LETT, 35(18), 1999, pp. 1559-1560
Authors:
Schmidt, H
Abare, AC
Bowers, JE
Denbaars, SP
Imamoglu, A
Citation: H. Schmidt et al., Large interband second-order susceptibilities in InxGa1-xN/GaN quantum wells, APPL PHYS L, 75(23), 1999, pp. 3611-3613
Authors:
Margalith, T
Buchinsky, O
Cohen, DA
Abare, AC
Hansen, M
DenBaars, SP
Coldren, LA
Citation: T. Margalith et al., Indium tin oxide contacts to gallium nitride optoelectronic devices, APPL PHYS L, 74(26), 1999, pp. 3930-3932
Authors:
Young, DK
Mack, MP
Abare, AC
Hansen, M
Coldren, LA
Denbaars, SP
Hu, EL
Awschalom, DD
Citation: Dk. Young et al., Near-field scanning optical microscopy of indium gallium nitride multiple-quantum-well laser diodes, APPL PHYS L, 74(16), 1999, pp. 2349-2351
Authors:
Minsky, MS
Chichibu, S
Fleischer, SB
Abare, AC
Bowers, JE
Hu, EL
Keller, S
Mishra, UK
DenBaars, SP
Citation: Ms. Minsky et al., Optical properties of InGaN/GaN quantum wells with Si doped barriers, JPN J A P 2, 37(11B), 1998, pp. L1362-L1364
Authors:
Abare, AC
Mack, MP
Hansen, M
Speck, JS
Coldren, LA
DenBaars, SP
Meyer, GA
Lehew, SL
Cooper, GA
Citation: Ac. Abare et al., Measurement of gain current relations for InGaN multiple quantum wells, APPL PHYS L, 73(26), 1998, pp. 3887-3889
Risultati:
1-14
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