AAAAAA

   
Results: 1-13 |
Results: 13

Authors: Katiyar, M Abelson, JR
Citation: M. Katiyar et Jr. Abelson, Investigation of hydrogen induced phase transition from a-Si : H to mu c-Si : H using real time infrared spectroscopy, MAT SCI E A, 304, 2001, pp. 349-352

Authors: Gupta, S Morell, G Katiyar, RS Abelson, JR Jin, HC Balbert, I
Citation: S. Gupta et al., Interference enhanced Raman scattering of hydrogenated amorphous silicon revisited, J RAMAN SP, 32(1), 2001, pp. 23-25

Authors: Voyles, PM Gerbi, JE Treacy, MMJ Gibson, JM Abelson, JR
Citation: Pm. Voyles et al., Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature, PHYS REV L, 86(24), 2001, pp. 5514-5517

Authors: Voyles, PM Gerbi, JE Treacy, MMJ Gibson, JM Abelson, JR
Citation: Pm. Voyles et al., Increased medium-range order in amorphous silicon with increased substratetemperature, J NON-CRYST, 293, 2001, pp. 45-52

Authors: Gerbi, JE Abelson, JR
Citation: Je. Gerbi et Jr. Abelson, Deposition of microcrystalline silicon: Direct evidence for hydrogen-induced surface mobility of Si adspecies, J APPL PHYS, 89(2), 2001, pp. 1463-1469

Authors: Erhardt, MK Jin, HC Abelson, JR Nuzzo, RG
Citation: Mk. Erhardt et al., Low-temperature fabrication of Si thin-film transistor microstructures by soft lithographic patterning on curved and planar substrates, CHEM MATER, 12(11), 2000, pp. 3306-3315

Authors: von Keudell, A Abelson, JR
Citation: A. Von Keudell et Jr. Abelson, Thermally induced changes in the hydrogen microstructure of amorphous hydrogenated silicon films, analyzed using in situ real time infrared spectroscopy, JPN J A P 1, 38(7A), 1999, pp. 4002-4006

Authors: Lubianiker, Y Cohen, JD Jin, HC Abelson, JR
Citation: Y. Lubianiker et al., Effect of embedded microcrystallites on the light-induced degradation of hydrogenated amorphous silicon, PHYS REV B, 60(7), 1999, pp. 4434-4437

Authors: Kwon, D Chen, CC Cohen, JD Jin, HC Hollar, E Robertson, I Abelson, JR
Citation: D. Kwon et al., Electronic transitions associated with small crystalline silicon inclusions within an amorphous silicon host, PHYS REV B, 60(7), 1999, pp. 4442-4445

Authors: von Keudell, A Abelson, JR
Citation: A. Von Keudell et Jr. Abelson, Direct insertion of SiH3 radicals into strained Si-Si surface bonds duringplasma deposition of hydrogenated amorphous silicon films, PHYS REV B, 59(8), 1999, pp. 5791-5798

Authors: Yu, KM Walukiewicz, W Muto, S Jin, HC Abelson, JR Clerc, C Glover, CJ Ridgway, MC
Citation: Km. Yu et al., Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron x-ray irradiation, APPL PHYS L, 75(21), 1999, pp. 3282-3284

Authors: Yu, KM Walukiewicz, W Muto, S Jin, HC Abelson, JR
Citation: Km. Yu et al., The effects of x-ray induced structural changes on the microstructure of a-Si after thermal crystallization, APPL PHYS L, 75(14), 1999, pp. 2032-2034

Authors: Muto, S Kobayashi, Y Yu, KM Walukiewicz, W Echer, CJ McCormick, S Abelson, JR
Citation: S. Muto et al., The influence of X-ray irradiation on structural relaxation and crystallization of amorphous silicon films, JPN J A P 1, 37(11), 1998, pp. 5890-5893
Risultati: 1-13 |