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Results: 1-12 |
Results: 12
Australian educational and research opportunities arising through rapid growth in the photovoltaic industry
Authors: Wenham, SR Honsberg, CB Cotter, JE Largent, R Aberle, AG Green, MA
Citation: Sr. Wenham et al., Australian educational and research opportunities arising through rapid growth in the photovoltaic industry, SOL EN MAT, 67(1-4), 2001, pp. 647-654
Application of an improved band-gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters
Authors: Schumacher, JO Altermatt, PP Heiser, G Aberle, AG
Citation: Jo. Schumacher et al., Application of an improved band-gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters, SOL EN MAT, 65(1-4), 2001, pp. 95-103
Determination of the density of states in heavily doped regions of siliconsolar cells
Authors: Neuhaus, DH Altermatt, PP Starrett, RP Aberle, AG
Citation: Dh. Neuhaus et al., Determination of the density of states in heavily doped regions of siliconsolar cells, SOL EN MAT, 65(1-4), 2001, pp. 105-110
Overview on SiN surface passivation of crystalline silicon solar cells
Authors: Aberle, AG
Citation: Ag. Aberle, Overview on SiN surface passivation of crystalline silicon solar cells, SOL EN MAT, 65(1-4), 2001, pp. 239-248
Aluminium-induced crystallisation of silicon on glass for thin-film solar cells
Authors: Nast, O Brehme, S Pritchard, S Aberle, AG Wenham, SR
Citation: O. Nast et al., Aluminium-induced crystallisation of silicon on glass for thin-film solar cells, SOL EN MAT, 65(1-4), 2001, pp. 385-392
Formation of large-grained uniform poly-Si films on glass at low temperature
Authors: Aberle, AG Harder, NP Oelting, S
Citation: Ag. Aberle et al., Formation of large-grained uniform poly-Si films on glass at low temperature, J CRYST GR, 226(2-3), 2001, pp. 209-214
Surface passivation of crystalline silicon solar cells: A review
Authors: Aberle, AG
Citation: Ag. Aberle, Surface passivation of crystalline silicon solar cells: A review, PROG PHOTOV, 8(5), 2000, pp. 473-487
Comprehensive study of rapid, low-cost silicon surface passivation technologies
Authors: Rohatgi, A Doshi, P Moschner, J Lauinger, T Aberle, AG Ruby, DS
Citation: A. Rohatgi et al., Comprehensive study of rapid, low-cost silicon surface passivation technologies, IEEE DEVICE, 47(5), 2000, pp. 987-993
Simulation and optimization of metal-insulator-semiconductor inversion-layer silicon solar cells
Authors: Kuhlmann, B Aberle, AG Hezel, R Heiser, G
Citation: B. Kuhlmann et al., Simulation and optimization of metal-insulator-semiconductor inversion-layer silicon solar cells, IEEE DEVICE, 47(11), 2000, pp. 2167-2178
Optimised antireflection coatings for planar silicon solar cells using remote PECVD silicon nitride and porous silicon dioxide
Authors: Nagel, H Aberle, AG Hezel, R
Citation: H. Nagel et al., Optimised antireflection coatings for planar silicon solar cells using remote PECVD silicon nitride and porous silicon dioxide, PROG PHOTOV, 7(4), 1999, pp. 245-260
Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors
Authors: Nagel, H Berge, C Aberle, AG
Citation: H. Nagel et al., Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors, J APPL PHYS, 86(11), 1999, pp. 6218-6221
Carrier recombination at silicon-silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition
Authors: Schmidt, J Aberle, AG
Citation: J. Schmidt et Ag. Aberle, Carrier recombination at silicon-silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition, J APPL PHYS, 85(7), 1999, pp. 3626-3633
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