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Results: 1-12 |
Results: 12
Device structures based on resonant tunneling diodes: A theoretical consideration
Authors: Abramov, II Korolev, AV
Citation: Ii. Abramov et Av. Korolev, Device structures based on resonant tunneling diodes: A theoretical consideration, TECH PHYS, 46(9), 2001, pp. 1190-1195
Consideration of the "island" background charge in single-electron transistor simulation
Authors: Abramov, II Novik, EG
Citation: Ii. Abramov et Eg. Novik, Consideration of the "island" background charge in single-electron transistor simulation, SEMICONDUCT, 35(4), 2001, pp. 474-476
Electrical characteristics of single-gate interference transistors based on various semiconductor materials
Authors: Abramov, II Rahachou, AI
Citation: Ii. Abramov et Ai. Rahachou, Electrical characteristics of single-gate interference transistors based on various semiconductor materials, SEMICONDUCT, 35(11), 2001, pp. 1309-1313
A single-electron transistor model based on a numerical solution of the Poisson equation
Authors: Abramov, II Novik, EG
Citation: Ii. Abramov et Eg. Novik, A single-electron transistor model based on a numerical solution of the Poisson equation, TECH PHYS L, 26(8), 2000, pp. 726-728
Parameters of metal one-electron transistors based on various materials
Authors: Abramov, II Novik, EG
Citation: Ii. Abramov et Eg. Novik, Parameters of metal one-electron transistors based on various materials, SEMICONDUCT, 34(8), 2000, pp. 975-980
Nonlinear electric model of a resonant-tunneling diode
Authors: Abramov, II Danilyuk, AL Korolev, AV
Citation: Ii. Abramov et al., Nonlinear electric model of a resonant-tunneling diode, IVUZ RADIO, 43(3-4), 2000, pp. 59-63
Potential electrical characteristics of interference transistors made fromvarious materials
Authors: Abramov, II Berashevich, YA Danilyuk, AL
Citation: Ii. Abramov et al., Potential electrical characteristics of interference transistors made fromvarious materials, TECH PHYS, 44(11), 1999, pp. 1384-1385
Classification of single-electron devices
Authors: Abramov, II Novik, EG
Citation: Ii. Abramov et Eg. Novik, Classification of single-electron devices, SEMICONDUCT, 33(11), 1999, pp. 1254-1259
Formation of complex Al-N-C layer in aluminium by successive carbon and nitrogen implantation
Authors: Uglov, VV Cherenda, NN Khodasevich, VV Sokol, VA Abramov, II Danilyuk, AL Wenzel, A Gerlach, J Rauschenbach, B
Citation: Vv. Uglov et al., Formation of complex Al-N-C layer in aluminium by successive carbon and nitrogen implantation, NUCL INST B, 147(1-4), 1999, pp. 332-336
Programs on the resonant-tunneling structure modeling
Authors: Abramov, II Berashevich, YA Sheremet, IV Yakubovskii, IA
Citation: Ii. Abramov et al., Programs on the resonant-tunneling structure modeling, IVUZ RADIO, 42(1-2), 1999, pp. A46-A50
Model of current oscillations in a metal-thin insulator-semiconductor structure
Authors: Abramov, II Danilyuk, AL
Citation: Ii. Abramov et Al. Danilyuk, Model of current oscillations in a metal-thin insulator-semiconductor structure, TECH PHYS, 43(12), 1998, pp. 1485-1486
The effect of external actions on coherent electro transport in the metal-insulator-semiconductor structure
Authors: Abramov, II Danilyuk, AL
Citation: Ii. Abramov et Al. Danilyuk, The effect of external actions on coherent electro transport in the metal-insulator-semiconductor structure, DAN BELARUS, 42(5), 1998, pp. 55-59
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