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Results: 1-9 |
Results: 9
0.3 dB minimum noise figure at 2.5 GHz of 0.13 mu m Si/Si0.58Ge0.42 n-MODFETs
Authors: Enciso, M Aniel, F Crozat, P Adde, R Zeuner, M Fox, A Hackbarth, T
Citation: M. Enciso et al., 0.3 dB minimum noise figure at 2.5 GHz of 0.13 mu m Si/Si0.58Ge0.42 n-MODFETs, ELECTR LETT, 37(17), 2001, pp. 1089-1090
Heterojunction transistors at low temperature
Authors: Aniel, F Adde, R
Citation: F. Aniel et R. Adde, Heterojunction transistors at low temperature, DEVICE AND CIRCUIT CRYOGENIC OPERATION FOR LOW TEMPERATURE ELECTRONICS, 2001, pp. 85-160
Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor
Authors: Cavassilas, N Aniel, F Boucaud, P Adde, R Maher, H Decobert, J Scavennec, A
Citation: N. Cavassilas et al., Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor, J APPL PHYS, 87(5), 2000, pp. 2548-2552
Feasibility of picosecond electrical sampling using GaAsFET
Authors: Hafdallah, H Ouslimani, A Adde, R Vernet, G Crozat, P
Citation: H. Hafdallah et al., Feasibility of picosecond electrical sampling using GaAsFET, IEEE INSTR, 49(1), 2000, pp. 172-177
Low temperature analysis of 0.25 mu m T-gate strained Si/Si0.55Ge0.45 N-MODFET's
Authors: Aniel, F Zerounian, N Adde, R Zeuner, M Hackbarth, T Konig, U
Citation: F. Aniel et al., Low temperature analysis of 0.25 mu m T-gate strained Si/Si0.55Ge0.45 N-MODFET's, IEEE DEVICE, 47(7), 2000, pp. 1477-1483
0.1 mu m gate length p-type Ge/Si0.4Ge0.6 MODFET with 135GHz f(max)
Authors: Hock, G Hackbarth, T Kab, N Herzog, HJ Enciso, M Aniel, F Crozat, P Adde, R Kohn, E Konig, U
Citation: G. Hock et al., 0.1 mu m gate length p-type Ge/Si0.4Ge0.6 MODFET with 135GHz f(max), ELECTR LETT, 36(16), 2000, pp. 1428-1429
Complex current gain and cutoff frequency determination of HBTs
Authors: Zerounian, N Aniel, F Adde, R
Citation: N. Zerounian et al., Complex current gain and cutoff frequency determination of HBTs, ELECTR LETT, 36(14), 2000, pp. 1236-1237
SiGe heterojunction bipolar transistor with 213GHz f(T) at 77K
Authors: Zerounian, N Aniel, F Adde, R Gruhle, A
Citation: N. Zerounian et al., SiGe heterojunction bipolar transistor with 213GHz f(T) at 77K, ELECTR LETT, 36(12), 2000, pp. 1076-1078
Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors
Authors: Danelon, V Aniel, F Benchimol, JL Mba, J Riet, M Crozat, P Vernet, G Adde, R
Citation: V. Danelon et al., Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors, IEEE MICR G, 9(5), 1999, pp. 195-197
Risultati: 1-9 |