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Results: 1-13 |
Results: 13

Authors: Rabibisoa-Rouchy, U Agius, B Cohen, C Abel, F L'Hoir, A
Citation: U. Rabibisoa-rouchy et al., Structural investigations on optical PLT thin films grown on (100) SrTiO3 by room and high-temperature channeling, INTEGR FERR, 32(1-4), 2001, pp. 901-906

Authors: Hugon, MC Varniere, F Letendu, F Agius, B Vickridge, L Kingon, AI
Citation: Mc. Hugon et al., O-18 study of the oxidation of reactively sputtered Ti1-xAlxN barrier, J MATER RES, 16(9), 2001, pp. 2591-2599

Authors: Ayguavives, F Agius, B Ea-Kim, B Vickridge, I
Citation: F. Ayguavives et al., Oxygen transport during annealing of Pb(Zr,Ti)O-3 thin films in O-2 gas and its effect on their conductivity, J MATER RES, 16(10), 2001, pp. 3005-3008

Authors: Letendu, F Hugon, MC Desvignes, JM Agius, B Vickridge, I Kim, DJ Kingon, AI
Citation: F. Letendu et al., Oxidation resistance of TaSiN diffusion barriers, INTEGR FERR, 31(1-4), 2000, pp. 315-322

Authors: Hugon, MC Desvignes, JM Agius, B Vickridge, IC Kim, DJ Kingon, AI
Citation: Mc. Hugon et al., Narrow resonance profiling study of the oxidation of reactively sputtered Ti1-xAlxN thin films, NUCL INST B, 161, 2000, pp. 578-583

Authors: Agius, B
Citation: B. Agius, Untitled, VIDE, 54(291), 1999, pp. 3-4

Authors: Delmotte, F Hugon, MC Agius, B Irene, EA
Citation: F. Delmotte et al., High density plasmas for micro- and optoelectronics processing, VIDE, 54(291), 1999, pp. 11

Authors: Hugon, MC Delmotte, F Agius, B
Citation: Mc. Hugon et al., Comparison of SiO2 and SiNx : H thin film properties deposited by high density plasma, VIDE, 54(291), 1999, pp. 73

Authors: Naudin, F Tristant, P Hugon, MC Jauberteau, I Agius, B Desmaison, J
Citation: F. Naudin et al., RMPECVD of silica films in large scale microwave plasma reactor: Films properties, J PHYS IV, 9(P8), 1999, pp. 819-826

Authors: Bridou, F Ravet, MF Raynal, A Chauvineau, JP Agius, B Andre, JM Troussel, P
Citation: F. Bridou et al., Reflectivity and spectral selectivity of B-Si multilayers in the X-UV range - Theoretical and experimental approach, J PHYS IV, 9(P5), 1999, pp. 77-79

Authors: Hugon, MC Delmotte, F Agius, B Irene, EA
Citation: Mc. Hugon et al., High density plasma deposition of device quality silicon nitride. II. Effects of thickness on the electrical properties, J VAC SCI B, 17(4), 1999, pp. 1430-1434

Authors: Ayguavives, F Ea-Kim, B Agius, B
Citation: F. Ayguavives et al., Influence of the deposition parameters controlled by OES on PZT thin film properties deposited by RF magnetron sputtering, FERROELECTR, 225(1-4), 1999, pp. 1035-1042

Authors: Rabibisoa, U Aubert, P Bridou, F Hugon, MC Agius, B
Citation: U. Rabibisoa et al., Epitaxial growth of (Pb, La)TiO3 thin films on (0001) Al2O3 and (001)SrTiO3 substrates by RF magnetron sputtering, FERROELECTR, 225(1-4), 1999, pp. 1109-1116
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