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Results:
1-8
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Results: 8
Authors:
Harame, DL
Ahlgren, DC
Coolbaugh, DD
Dunn, JS
Freeman, GG
Gillis, JD
Groves, RA
Hendersen, GN
Johnson, RA
Joseph, AJ
Subbanna, S
Victor, AM
Watson, KM
Webster, CS
Zampardi, PJ
Citation: Dl. Harame et al., Current status and future trends of SiGeBiCMOS technology, IEEE DEVICE, 48(11), 2001, pp. 2575-2594
Authors:
Ahlgren, DC
Jagannathan, B
Citation: Dc. Ahlgren et B. Jagannathan, SiGe for mainstream semiconductor manufacturing, SOL ST TECH, 43(1), 2000, pp. 53
Authors:
Niu, GF
Cressler, JD
Mathew, SJ
Ahlgren, DC
Citation: Gf. Niu et al., Enhanced low-temperature corner current-carrying inherent to shallow trench isolation (STI), IEEE ELEC D, 20(10), 1999, pp. 520-522
Authors:
Banerjee, G
Niu, G
Cressler, JD
Clark, SD
Palmer, MJ
Ahlgren, DC
Citation: G. Banerjee et al., Anomalous dose rate effects in gamma irradiated SiGe heterojunction bipolar transistors, IEEE NUCL S, 46(6), 1999, pp. 1620-1626
Authors:
Zhang, SM
Niu, GF
Cressler, JD
Clark, SD
Ahlgren, DC
Citation: Sm. Zhang et al., The effects of proton irradiation on the RF performance of SiGeHBTs, IEEE NUCL S, 46(6), 1999, pp. 1716-1721
Authors:
Niu, GF
Cressler, JD
Zhang, SM
Gogineni, U
Ahlgren, DC
Citation: Gf. Niu et al., Measurement of collector-base junction avalanche multiplication effects inadvanced UHV/CVD SiGe HBT's, IEEE DEVICE, 46(5), 1999, pp. 1007-1015
Authors:
Niu, GF
Banerjee, G
Cressler, JD
Roldan, JM
Clark, SD
Ahlgren, DC
Citation: Gf. Niu et al., Electrical probing of surface and bulk traps in proton-irradiated gate-assisted lateral PNP transistors, IEEE NUCL S, 45(6), 1998, pp. 2361-2365
Authors:
Roldan, JM
Niu, GF
Ansley, WE
Cressler, JD
Clark, SD
Ahlgren, DC
Citation: Jm. Roldan et al., An investigation of the spatial location of proton-induced traps in SiGe HBTs, IEEE NUCL S, 45(6), 1998, pp. 2424-2429
Risultati:
1-8
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