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Results: 51-61/61
Authors:
Jalil, MBA
Wagner, M
Ahmed, H
Citation: Mba. Jalil et al., Retention time in multiple-tunnel junction memory device, J APPL PHYS, 85(2), 1999, pp. 1203-1210
Authors:
Stone, NJ
Ahmed, H
Citation: Nj. Stone et H. Ahmed, Logic circuit elements using single-electron tunnelling transistors, ELECTR LETT, 35(21), 1999, pp. 1883-1884
Authors:
Nakazato, K
Itoh, K
Mizuta, H
Ahmed, H
Citation: K. Nakazato et al., Silicon stacked tunnel transistor for highspeed and high-density random access memory gain cells, ELECTR LETT, 35(10), 1999, pp. 848-850
Authors:
Ahmed, H
Rafindadi, AH
Pindiga, UH
Opara, WEK
Citation: H. Ahmed et al., Suppurative granulomatous eosinophilic panniculitis: Case report, E AFR MED J, 76(12), 1999, pp. 709-712
Authors:
Ford, EM
Ahmed, H
Citation: Em. Ford et H. Ahmed, Control of Coulomb blockade characteristics with dot size and density in planar metallic multiple tunnel junctions, APPL PHYS L, 75(3), 1999, pp. 421-423
Authors:
Durrani, ZAK
Irvine, AC
Ahmed, H
Nakazato, K
Citation: Zak. Durrani et al., A memory cell with single-electron and metal-oxide-semiconductor transistor integration, APPL PHYS L, 74(9), 1999, pp. 1293-1295
Authors:
Pooley, DM
Ahmed, H
Mizuta, H
Nakazato, K
Citation: Dm. Pooley et al., Coulomb blockade in silicon nano-pillars, APPL PHYS L, 74(15), 1999, pp. 2191-2193
Authors:
Lewis, PA
Ahmed, H
Sato, T
Citation: Pa. Lewis et al., Silicon nanopillars formed with gold colloidal particle masking, J VAC SCI B, 16(6), 1998, pp. 2938-2941
Authors:
Ford, EM
Ahmed, H
Citation: Em. Ford et H. Ahmed, Fabrication of self-aligned metallic Coulomb blockade devices on Si nanowires, J VAC SCI B, 16(6), 1998, pp. 3800-3803
Authors:
Ahmed, H
Citation: H. Ahmed, Responses in output to monetary shocks and the interest rate: a rational expectations model with working capital, ECON LETT, 61(3), 1998, pp. 351-358
Authors:
Chen, W
Ahmed, H
Citation: W. Chen et H. Ahmed, Nanofabrication for electronics, ADV IMAG EL, 102, 1998, pp. 87-185