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Results: 76-90/90
Authors:
Pernot, C
Hirano, A
Iwaya, M
Detchprohm, T
Amano, H
Akasaki, I
Citation: C. Pernot et al., Improvement of low-intensity ultraviolet photodetectors based on AlGaN with low threading dislocation density, PHYS ST S-A, 176(1), 1999, pp. 147-151
Authors:
Akasaki, I
Citation: I. Akasaki, Renaissance and progress in crystal growth of nitride semiconductors, J CRYST GR, 199, 1999, pp. 885-893
Authors:
Wetzel, C
Takeuchi, T
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Piezoelectric Franz-Keldysh effect in strained GaInN/GaN heterostructures, J APPL PHYS, 85(7), 1999, pp. 3786-3791
Authors:
Yamaguchi, S
Kariya, M
Nitta, S
Takeuchi, T
Wetzel, C
Amano, H
Akasaki, I
Citation: S. Yamaguchi et al., Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy, J APPL PHYS, 85(11), 1999, pp. 7682-7688
Authors:
Yamaguchi, S
Kariya, M
Nitta, S
Amano, H
Akasaki, I
Citation: S. Yamaguchi et al., Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy, APPL PHYS L, 75(26), 1999, pp. 4106-4108
Authors:
Takeuchi, T
Detchprohm, T
Iwaya, M
Hayashi, N
Isomura, K
Kimura, K
Yamaguchi, M
Amano, H
Akasaki, I
Kaneko, Y
Shioda, R
Watanabe, S
Hidaka, T
Yamaoka, Y
Kaneko, Y
Yamada, N
Citation: T. Takeuchi et al., Improvement of far-field pattern in nitride laser diodes, APPL PHYS L, 75(19), 1999, pp. 2960-2962
Authors:
Dalfors, J
Bergman, JP
Holtz, PO
Sernelius, BE
Monemar, B
Amano, H
Akasaki, I
Citation: J. Dalfors et al., Optical properties of doped InGaN GaN multiquantum-well structures, APPL PHYS L, 74(22), 1999, pp. 3299-3301
Authors:
Steude, G
Meyer, BK
Goldner, A
Hoffmann, A
Bertram, F
Christen, J
Amano, H
Akasaki, I
Citation: G. Steude et al., Optical investigations of AlGaN on GaN epitaxial films, APPL PHYS L, 74(17), 1999, pp. 2456-2458
Authors:
Amano, H
Takeuchi, T
Yamaguchi, S
Wetzel, C
Akasaki, I
Citation: H. Amano et al., Characterization of the crystalline quality on GaN on sapphire and ternaryalloys, ELEC C JP 2, 81(10), 1998, pp. 48-54
Authors:
Amano, H
Iwaya, M
Kashima, T
Katsuragawa, M
Akasaki, I
Han, J
Hearne, S
Floro, JA
Chason, E
Figiel, J
Citation: H. Amano et al., Stress and defect control in GaN using low temperature interlayers, JPN J A P 2, 37(12B), 1998, pp. L1540-L1542
Authors:
Chen, WM
Buyanova, IA
Wagner, M
Monemar, B
Lindstrom, JL
Amano, H
Akasaki, I
Citation: Wm. Chen et al., Similarity between the 0.88-eV photoluminescence in GaN and the electron-capture emission of the O-p donor in GaP, PHYS REV B, 58(20), 1998, pp. R13351-R13354
Authors:
Akasaki, I
Amano, H
Citation: I. Akasaki et H. Amano, Lasers, SEM SEMIMET, 50, 1998, pp. 459-472
Authors:
Akasaki, I
Citation: I. Akasaki, Progress in crystal growth and future prospects of group III nitrides by metalorganic vapor-phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 248-251
Authors:
Yamaguchi, S
Kariya, M
Nitta, S
Kato, H
Takeuchi, T
Wetzel, C
Amano, H
Akasaki, I
Citation: S. Yamaguchi et al., Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 309-313
Organometallic vapor-phase epitaxy of gallium nitride for high-brightness blue light-emitting diodes
Authors:
Akasaki, I
Amano, H
Citation: I. Akasaki et H. Amano, Organometallic vapor-phase epitaxy of gallium nitride for high-brightness blue light-emitting diodes, SEM SEMIMET, 48, 1997, pp. 357