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Results: 1-13 |
Results: 13
Complex roughening of Si under oblique bombardment by low-energy oxygen ions
Authors: Alkemade, PFA Jiang, ZX
Citation: Pfa. Alkemade et Zx. Jiang, Complex roughening of Si under oblique bombardment by low-energy oxygen ions, J VAC SCI B, 19(5), 2001, pp. 1699-1705
Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometry
Authors: Jiang, ZX Backer, S Lee, JJ Wu, LY Guenther, T Sieloff, D Choi, P Foisy, M Alkemade, PFA
Citation: Zx. Jiang et al., Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometry, J VAC SCI B, 19(4), 2001, pp. 1133-1137
Poly-silicon films with low impurity concentration made by hot wire chemical vapour deposition
Authors: Schropp, REI Alkemade, PFA Rath, JK
Citation: Rei. Schropp et al., Poly-silicon films with low impurity concentration made by hot wire chemical vapour deposition, SOL EN MAT, 65(1-4), 2001, pp. 541-547
The behaviour of deuterium incorporated into the buried oxide of SIMOX
Authors: Rivera, A van Veen, A Schut, H de Nijs, JMM Balk, P Alkemade, PFA
Citation: A. Rivera et al., The behaviour of deuterium incorporated into the buried oxide of SIMOX, NUCL INST B, 178, 2001, pp. 287-290
Experimental investigation of band structure modification in silicon nanocrystals - art. no. 115308
Authors: Pawlak, BJ Gregorkiewicz, T Ammerlaan, CAJ Takkenberg, W Tichelaar, FD Alkemade, PFA
Citation: Bj. Pawlak et al., Experimental investigation of band structure modification in silicon nanocrystals - art. no. 115308, PHYS REV B, 6411(11), 2001, pp. 5308
On the anomalous SIMS transient of B in Si: the influence of surface conditions
Authors: Alkemade, PFA Liu, ZX
Citation: Pfa. Alkemade et Zx. Liu, On the anomalous SIMS transient of B in Si: the influence of surface conditions, SURF INT AN, 31(8), 2001, pp. 799-801
Location-control of large Si grains by dual-beam excimer-laser and thick oxide portion
Authors: Ishihara, R Burtsev, A Alkemade, PFA
Citation: R. Ishihara et al., Location-control of large Si grains by dual-beam excimer-laser and thick oxide portion, JPN J A P 1, 39(7A), 2000, pp. 3872-3878
Apparent depths of B and Ge deltas in Si as measured by secondary ion massspectrometry
Authors: Jiang, ZX Alkemade, PFA Tung, CH Wang, JLF
Citation: Zx. Jiang et al., Apparent depths of B and Ge deltas in Si as measured by secondary ion massspectrometry, J VAC SCI B, 18(2), 2000, pp. 706-712
Oxygen-related defects in the top silicon layer of SIMOX; the effect of thermal treatments
Authors: Rivera, A de Nijs, JMM Balk, P van Veen, A Schut, H Alkemade, PFA
Citation: A. Rivera et al., Oxygen-related defects in the top silicon layer of SIMOX; the effect of thermal treatments, MAT SCI E B, 73(1-3), 2000, pp. 77-81
Favored structure of Ag nanoparticles embedded in SiO2 by implantation: Single crystal with contracted (111) lattice
Authors: Liu, ZX Li, H Wang, HH Shen, DY Wang, XM Alkemade, PFA
Citation: Zx. Liu et al., Favored structure of Ag nanoparticles embedded in SiO2 by implantation: Single crystal with contracted (111) lattice, J MATER RES, 15(6), 2000, pp. 1245-1247
Effect of post-deposition treatments on the hydrogenation of hot-wire deposited amorphous silicon films
Authors: Feenstra, KF Alkemade, PFA Algra, E Schropp, REI van der Weg, WF
Citation: Kf. Feenstra et al., Effect of post-deposition treatments on the hydrogenation of hot-wire deposited amorphous silicon films, PROG PHOTOV, 7(5), 1999, pp. 341-351
The surface transient in Si for SIMS with oblique low-energy O-2(+) beams
Authors: Jiang, ZX Alkemade, PFA
Citation: Zx. Jiang et Pfa. Alkemade, The surface transient in Si for SIMS with oblique low-energy O-2(+) beams, SURF INT AN, 27(3), 1999, pp. 125-131
Orientation of aluminum nuclei on Si(100) and Si(111)
Authors: Bisch, C Boellaard, E Janssen, GCAM Alkemade, PFA Radelaar, S
Citation: C. Bisch et al., Orientation of aluminum nuclei on Si(100) and Si(111), THIN SOL FI, 336(1-2), 1998, pp. 84-88
Risultati: 1-13 |