Authors:
Yamada, M
Anan, T
Tokutome, K
Kamei, A
Nishi, K
Sugou, S
Citation: M. Yamada et al., Low-threshold operation of 1.3-mu m GaAsSb quantum-well lasers directly grown on GaAs substrates, IEEE PHOTON, 12(7), 2000, pp. 774-776
Authors:
Yamada, M
Anan, T
Kurihara, K
Nishi, K
Tokutome, K
Kamei, A
Sugou, S
Citation: M. Yamada et al., Room temperature low-threshold CW operation of 1.23 mu m GaAsSbVCSELs on GaAs substrates, ELECTR LETT, 36(7), 2000, pp. 637-638
Authors:
Yamazaki, H
Anan, T
Kudo, K
Sugou, S
Sasaki, T
Citation: H. Yamazaki et al., Planar-buried-heterostructure laser diodes with oxidized AlAs insulating current blocking, IEEE S T QU, 5(3), 1999, pp. 688-693
Authors:
Nagata, Y
Anan, T
Yoshida, T
Mizukami, T
Taya, Y
Fujiwara, T
Kato, H
Saya, H
Nakao, M
Citation: Y. Nagata et al., The stabilization mechanism of mutant-type p53 by impaired ubiquitination:the loss of wild-type p53 function and the hsp90 association, ONCOGENE, 18(44), 1999, pp. 6037-6049
Authors:
Anan, T
Yamada, M
Tokutome, K
Sugou, S
Nishi, K
Kamei, A
Citation: T. Anan et al., Room-temperature pulsed operation of GaAsSb GaAs vertical-cavity surface-emitting lasers, ELECTR LETT, 35(11), 1999, pp. 903-904