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Results: 1-7 |
Results: 7
High oriented epitaxial oligomer/fullerene structures grown by hot wall epitaxy
Authors: Andreev, AY Matt, G Sitter, H Brabec, CJ Badt, D Neugebauer, H Sariciftci, NS
Citation: Ay. Andreev et al., High oriented epitaxial oligomer/fullerene structures grown by hot wall epitaxy, SYNTH METAL, 116(1-3), 2001, pp. 235-239
Cosmological parameters and the large numbers of Eddington and Dirac
Authors: Andreev, AY Komberg, BV
Citation: Ay. Andreev et Bv. Komberg, Cosmological parameters and the large numbers of Eddington and Dirac, ASTRON REP, 44(3), 2000, pp. 139-141
Optically active Er-related centers in Si : Er epitaxial layers grown by the sublimation MBE method
Authors: Andreev, BA Andreev, AY Gaponova, DM Krasil'nik, ZF Kuznetsov, VP Novikov, AV Stepikhova, MV Uskova, EA Shmagin, VB Lanzerstorfer, S
Citation: Ba. Andreev et al., Optically active Er-related centers in Si : Er epitaxial layers grown by the sublimation MBE method, IAN FIZ, 64(2), 2000, pp. 269-272
Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy
Authors: Andreev, AY Andreev, BA Drozdov, MN Krasil'nik, ZF Stepikhova, MV Shmagin, VB Kuznetsov, VP Rubtsova, RA Uskova, EA Karpov, YA Ellmer, H Palmetshofer, L Piplits, K Hutter, H
Citation: Ay. Andreev et al., Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy, SEMICONDUCT, 33(2), 1999, pp. 131-134
Dynamics of the formation of an event horizon
Authors: Shatskii, AA Andreev, AY
Citation: Aa. Shatskii et Ay. Andreev, Dynamics of the formation of an event horizon, J EXP TH PH, 89(2), 1999, pp. 189-196
Electrical and optical properties of silicon, doped by erbium during sublimational molecular beam epitaxy
Authors: Andreev, AY Andreev, BA Drozdov, MN Ellmer, H Kuznetsov, VP Kalugin, NG Krasilnic, ZF Karpov, YA Palmetshofer, L Piplits, K Rubtsova, RA Stepikhova, MV Uskova, EA Shmagin, VB Hutter, H
Citation: Ay. Andreev et al., Electrical and optical properties of silicon, doped by erbium during sublimational molecular beam epitaxy, IAN FIZ, 63(2), 1999, pp. 392-399
Optical Er-doping of Si during sublimational molecular beam epitaxy
Authors: Andreev, BA Andreev, AY Ellmer, H Hutter, H Krasil'nik, ZF Kuznetsov, VP Lanzerstorfer, S Palmetshofer, L Piplits, K Rubtsova, RA Sokolov, NS Shmagin, VB Stepikhova, MV Uskova, EA
Citation: Ba. Andreev et al., Optical Er-doping of Si during sublimational molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 534-537
Risultati: 1-7 |