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Results: 1-13 |
Results: 13

Authors: Hastas, NA Dimitriadis, CA Logothetidis, S Angelis, CT Konofaos, N Evangelou, EK
Citation: Na. Hastas et al., Temperature dependence of the barrier at the tetrahedral amorphous carbon-silicon interface, SEMIC SCI T, 16(6), 2001, pp. 474-477

Authors: Farmakis, FV Brini, J Kamarinos, G Angelis, CT Dimitriadis, CA Miyasaka, M
Citation: Fv. Farmakis et al., On-current modeling of large-grain polycrystalline silicon thin-film transistors, IEEE DEVICE, 48(4), 2001, pp. 701-706

Authors: Konofaos, N Angelis, CT Evangelou, EK Dimitriadis, CA Logothetidis, S
Citation: N. Konofaos et al., Charge carrier response time in sputtered a-C/n-Si heterojunctions, APPL PHYS L, 79(15), 2001, pp. 2381-2383

Authors: Konofaos, N Angelis, CT Evangelou, EK Panayiotatos, Y Dimitriadis, CA Logothetidis, S
Citation: N. Konofaos et al., Electrical characterization of TiN/a-C/Si devices grown by magnetron sputtering at room temperature, APPL PHYS L, 78(12), 2001, pp. 1682-1684

Authors: Farmakis, FV Brini, J Kamarinos, G Angelis, CT Dimitriadis, CA Miyasaka, M Ouisse, T
Citation: Fv. Farmakis et al., Grain and grain-boundary control of the transfer characteristics of large-grain polycrystalline silicon thin-film transistors, SOL ST ELEC, 44(6), 2000, pp. 913-916

Authors: Angelis, CT Dimitriadis, CA Farmakis, FV Brini, J Kamarinos, G Miyasaka, M Stoemenos, I
Citation: Ct. Angelis et al., Transconductance of large grain excimer laser-annealed polycrystalline silicon thin film transistors, SOL ST ELEC, 44(6), 2000, pp. 1081-1087

Authors: Angelis, CT Dimitriadis, CA Miyasaka, M Farmakis, FV Kamarinos, G Brini, J Stoemenos, J
Citation: Ct. Angelis et al., Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors (vol 86, pg 4600, 1999), J APPL PHYS, 87(3), 2000, pp. 1588-1588

Authors: Angelis, CT Dimitriadis, CA Farmakis, FV Brini, J Kamarinos, G Miyasaka, M
Citation: Ct. Angelis et al., Threshold voltage of excimer-laser-annealed polycrystalline silicon thin-film transistors, APPL PHYS L, 76(17), 2000, pp. 2442-2444

Authors: Angelis, CT Dimitriadis, CA Farmakis, FV Brini, J Kamarinos, G Gueorguiev, VK Ivanov, TE
Citation: Ct. Angelis et al., Empirical relationship between low-frequency drain current noise and grain-boundary potential barrier height in high-temperature-processed polycrystalline silicon thin-film transistors, APPL PHYS L, 76(1), 2000, pp. 118-120

Authors: Angelis, CT Dimitriadis, CA Miyasaka, M Farmakis, FV Kamarinos, G Brini, J Stoemenos, J
Citation: Ct. Angelis et al., Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors, J APPL PHYS, 86(8), 1999, pp. 4600-4606

Authors: Angelis, CT Dimitriadis, CA Farmakis, FV Brini, J Kamarinos, G Miyasaka, M
Citation: Ct. Angelis et al., Dimension scaling of low frequency noise in the drain current of polycrystalline silicon thin-film transistors, J APPL PHYS, 86(12), 1999, pp. 7083-7086

Authors: Angelis, CT Dimitriadis, CA Brini, J Kamarinos, G Gueorguiev, VK Ivanov, TE
Citation: Ct. Angelis et al., Low-frequency noise spectroscopy of polycrystalline silicon thin-film transistors, IEEE DEVICE, 46(5), 1999, pp. 968-974

Authors: Angelis, CT Dimitriadis, CA Farmakis, FV Kamarinos, G Brini, J Miyasaka, M
Citation: Ct. Angelis et al., Electrical and noise properties of thin-film transistors on very thin excimer laser annealed polycrystalline silicon films, APPL PHYS L, 74(24), 1999, pp. 3684-3686
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