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Results:
1-7
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Results: 7
Authors:
Fiorenza, JG
Antoniadis, DA
del Alamo, JA
Citation: Jg. Fiorenza et al., RF power LDMOSFET on SOI, IEEE ELEC D, 22(3), 2001, pp. 139-141
Authors:
Lochtefeld, A
Antoniadis, DA
Citation: A. Lochtefeld et Da. Antoniadis, On experimental determination of carrier velocity in deeply scaled NMOS: How close to the thermal limit?, IEEE ELEC D, 22(2), 2001, pp. 95-97
Authors:
Tan, CS
Choi, WK
Bera, LK
Pey, KL
Antoniadis, DA
Fitzgerald, EA
Currie, MT
Maiti, CK
Citation: Cs. Tan et al., N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD, SOL ST ELEC, 45(11), 2001, pp. 1945-1949
Authors:
Lee, ML
Leitz, CW
Cheng, Z
Pitera, AJ
Langdo, T
Currie, MT
Taraschi, G
Fitzgerald, EA
Antoniadis, DA
Citation: Ml. Lee et al., Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Si1-xGex/Si virtual substrates, APPL PHYS L, 79(20), 2001, pp. 3344-3346
Authors:
Langdo, TA
Leitz, CW
Currie, MT
Fitzgerald, EA
Lochtefeld, A
Antoniadis, DA
Citation: Ta. Langdo et al., High quality Ge on Si by epitaxial necking, APPL PHYS L, 76(25), 2000, pp. 3700-3702
Authors:
Lee, ZK
McIlrath, MB
Antoniadis, DA
Citation: Zk. Lee et al., Two-dimensional doping profile characterization of MOSFET's by inverse modeling using I-V characteristics in the subthreshold region, IEEE DEVICE, 46(8), 1999, pp. 1640-1649
Authors:
Mistry, KR
Sleight, JW
Grula, G
Flatley, R
Miner, B
Bair, LA
Antoniadis, DA
Citation: Kr. Mistry et al., Parasitic bipolar gain reduction and the optimization of 0.25-mu m partially depleted SOI MOSFET's, IEEE DEVICE, 46(11), 1999, pp. 2201-2209
Risultati:
1-7
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