AAAAAA

   
Results: 1-12 |
Results: 12
A study of positron properties in quartz crystals and synthetic silica glass
Authors: Anwand, W Brauer, G Hasegawa, M Dersch, O Rauch, F
Citation: W. Anwand et al., A study of positron properties in quartz crystals and synthetic silica glass, ACT PHY P A, 99(3-4), 2001, pp. 321-328
Characterization of Sn films on silicon by slow positron implantation spectroscopy
Authors: Nancheva, N Docheva, P Anwand, W Brauer, G
Citation: N. Nancheva et al., Characterization of Sn films on silicon by slow positron implantation spectroscopy, ACT PHY P A, 99(3-4), 2001, pp. 435-440
Positron implantation depth profiles in alpha-irradiated 18 carets gold
Authors: Thome, T Fradin, J Grynszpan, RI Anwand, W Brauer, G
Citation: T. Thome et al., Positron implantation depth profiles in alpha-irradiated 18 carets gold, NUCL INST B, 178, 2001, pp. 342-345
Precursory stage of damage production in argon irradiated cubic zirconia
Authors: Fradin, J Thome, T Grynszpan, RI Thome, L Anwand, W Brauer, G
Citation: J. Fradin et al., Precursory stage of damage production in argon irradiated cubic zirconia, NUCL INST B, 175, 2001, pp. 516-520
Characterization of rf-sputtered platinum films by positron annihilation spectroscopy
Authors: Brauer, G Anwand, W Nicht, EM Kuriplach, J Prochazka, I Becvar, F Osipowicz, A Coleman, PG
Citation: G. Brauer et al., Characterization of rf-sputtered platinum films by positron annihilation spectroscopy, PHYS REV B, 62(8), 2000, pp. 5199-5206
Reply to "Comment on 'Interstitial-type defects away of the projected ion range in high energy ion implanted and annealed silicon' " [Appl. Phys. Lett. 77, 151 (2000)]
Authors: Kogler, R Peeva, A Anwand, W Brauer, G Skorupa, W Werner, P Gosele, U
Citation: R. Kogler et al., Reply to "Comment on 'Interstitial-type defects away of the projected ion range in high energy ion implanted and annealed silicon' " [Appl. Phys. Lett. 77, 151 (2000)], APPL PHYS L, 77(1), 2000, pp. 153-153
Magnetron sputtered SnOx films on tin probed by slow positron implantationspectroscopy
Authors: Nancheva, N Docheva, P Anwand, W Brauer, G Coleman, PG
Citation: N. Nancheva et al., Magnetron sputtered SnOx films on tin probed by slow positron implantationspectroscopy, ACT PHY P A, 95(4), 1999, pp. 623-626
Characterisation of Al+-implanted LiF by a monoenergetic positron beam
Authors: Sendezera, EJ Davidson, AT Fischer, CG Connel, SH Sellschop, JPF Anwand, W Brauer, G Nicht, EM
Citation: Ej. Sendezera et al., Characterisation of Al+-implanted LiF by a monoenergetic positron beam, APPL SURF S, 149(1-4), 1999, pp. 125-129
Characterization of vacancy-type defects in Al+ and N+ co-implanted SiC byslow positron implantation spectroscopy
Authors: Anwand, W Brauer, G Coleman, PG Yankov, R Skorupa, W
Citation: W. Anwand et al., Characterization of vacancy-type defects in Al+ and N+ co-implanted SiC byslow positron implantation spectroscopy, APPL SURF S, 149(1-4), 1999, pp. 140-143
Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering
Authors: Anwand, W Brauer, G Coleman, PG Voelskow, M Skorupa, W
Citation: W. Anwand et al., Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering, APPL SURF S, 149(1-4), 1999, pp. 148-150
Positron affinity in semiconductors: Theoretical and experimental studies
Authors: Kuriplach, J Sob, M Brauer, G Anwand, W Nicht, EM Coleman, PG Wagner, N
Citation: J. Kuriplach et al., Positron affinity in semiconductors: Theoretical and experimental studies, PHYS REV B, 59(3), 1999, pp. 1948-1955
Interstitial-type defects away from the projected ion range in high energyion implanted and annealed silicon
Authors: Kogler, R Peeva, A Anwand, W Brauer, G Skorupa, W Werner, P Gosele, U
Citation: R. Kogler et al., Interstitial-type defects away from the projected ion range in high energyion implanted and annealed silicon, APPL PHYS L, 75(9), 1999, pp. 1279-1281
Risultati: 1-12 |