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Results: 1-12 |
Results: 12

Authors: Sarantopoulou, E Cefalas, AC Argitis, P Gogolides, E
Citation: E. Sarantopoulou et al., Photoresist materials for 157-nm photolithography, MAT SCI E C, 15(1-2), 2001, pp. 159-161

Authors: Mladenov, G Vutova, K Raptis, I Argitis, P Rangelow, I
Citation: G. Mladenov et al., Simulation of latent image formation for ion beam projection lithography, MICROEL ENG, 57-8, 2001, pp. 335-342

Authors: Diakoumakos, CD Raptis, I Tserepi, A Argitis, P
Citation: Cd. Diakoumakos et al., Negative (meth)acrylate resist materials based on novel crosslinking chemistry, MICROEL ENG, 57-8, 2001, pp. 539-545

Authors: Raptis, I Glezos, N Valamontes, E Zervas, E Argitis, P
Citation: I. Raptis et al., Electron beam lithography simulation for high resolution and high-density patterns, VACUUM, 62(2-3), 2001, pp. 263-271

Authors: Glezos, N Argitis, P Velessiotis, D Raptis, I Hatzakis, M Hudek, P Kostic, I
Citation: N. Glezos et al., Aqueous base development and acid diffusion length optimization in negative epoxy resist for electron beam lithography, J VAC SCI B, 18(6), 2000, pp. 3431-3434

Authors: Cefalas, AC Sarantopoulou, E Gogolides, E Argitis, P
Citation: Ac. Cefalas et al., Absorbance and outgasing of photoresist polymeric materials for UV lithography below 193 nm including 157 nm lithography, MICROEL ENG, 53(1-4), 2000, pp. 123-126

Authors: Argitis, P Glezos, N Vasilopoulou, M Raptis, I Hatzakis, M Everett, J Meneghini, G Palumbo, A Ardito, M Hudek, P Kostic, I
Citation: P. Argitis et al., Aqueous base developable epoxy resist for high sensitivity electron beam lithography, MICROEL ENG, 53(1-4), 2000, pp. 453-456

Authors: Raptis, I Velessiotis, D Vasilopoulou, M Argitis, P
Citation: I. Raptis et al., Development mechanism study by dissolution monitoring of positive methacrylate photoresists, MICROEL ENG, 53(1-4), 2000, pp. 489-492

Authors: Cefalas, AC Sarantopoulou, E Argitis, P Gogolides, E
Citation: Ac. Cefalas et al., Mass spectroscopic and degassing characteristics of polymeric materials for 157 nm photolithography, APPL PHYS A, 69, 1999, pp. S929-S933

Authors: Ioakimoglou, E Boyatzis, S Argitis, P Fostiridou, A Papapanagiotou, K Yannovits, N
Citation: E. Ioakimoglou et al., Thin-film study on the oxidation of linseed oil in the presence of selected copper pigments, CHEM MATER, 11(8), 1999, pp. 2013-2022

Authors: Seo, Y Lee, K Yi, M Seo, E Choi, BK Kim, O Raptis, I Argitis, P Hatzakis, M
Citation: Y. Seo et al., Evaluation of advanced epoxy novolac resist, EPR, for sub 100nm synchrotron x-ray proximity lithography, MICROEL ENG, 46(1-4), 1999, pp. 461-464

Authors: Tegou, E Gogolides, E Argitis, P Raptis, I Meneghini, G Cui, Z
Citation: E. Tegou et al., Silylation and dry development of chemically amplified resists SAL601(1),AZPN114*(1), and epoxidised resist (EPR*(1)) for high resolution electron-beam lithography, JPN J A P 1, 37(12B), 1998, pp. 6873-6876
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