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Results:
1-8
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Results: 8
Authors:
van der Berg, JA
Zhang, S
Whelan, S
Armour, DG
Goldberg, RD
Bailey, P
Noakes, TCQ
Citation: Ja. Van Der Berg et al., Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si, NUCL INST B, 183(1-2), 2001, pp. 154-165
Authors:
Whelan, S
Armour, DG
Van den Berg, JA
Goldberg, RD
Zhang, S
Bailey, P
Noakes, TCQ
Citation: S. Whelan et al., Implant temperature dependence of transient-enhanced diffusion in silicon (100) implanted with low-energy arsenic ions, MAT SC S PR, 3(4), 2000, pp. 285-290
Authors:
Moffatt, S
Hemment, PLF
Whelan, S
Armour, DG
Citation: S. Moffatt et al., Silicon damage studies due to ultra-low-energy ion implantation with heavyspecies and rapid thermal annealing, MAT SC S PR, 3(4), 2000, pp. 291-296
Authors:
Goldberg, RD
Armour, DG
van den Berg, JA
Cook, CEA
Whelan, S
Zhang, S
Knorr, N
Foad, MA
Ohno, H
Citation: Rd. Goldberg et al., The production and use of ultralow energy ion beams, REV SCI INS, 71(2), 2000, pp. 1032-1035
Authors:
Whelan, S
Van den Berg, JA
Zhang, S
Armour, DG
Goldberg, RD
Citation: S. Whelan et al., The dependence of arsenic transient enhanced diffusion on the silicon substrate temperature during ultralow energy implantation, APPL PHYS L, 76(5), 2000, pp. 571-573
Authors:
Ohno, H
van den Berg, JA
Nagai, S
Armour, DG
Citation: H. Ohno et al., Growth of carbon thin film by low-energy mass-selected ion beam deposition, NUCL INST B, 148(1-4), 1999, pp. 673-677
Authors:
Rahman, M
Deng, LG
Boyd, A
Ribayrol, A
Wilkinson, CDW
van den Berg, JA
Armour, DG
Citation: M. Rahman et al., Design considerations for low damage process plasmas, MICROEL ENG, 46(1-4), 1999, pp. 299-302
Authors:
Normand, P
Tsoukalas, D
Kapetanakis, E
Van den Berg, JA
Armour, DG
Stoemenos, J
Vieu, C
Citation: P. Normand et al., Formation of 2-D arrays of silicon nanocrystals in thin SiO2 films by very-low energy Si+ ion implantation, EL SOLID ST, 1(2), 1998, pp. 88-90
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