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Results: 1-11 |
Results: 11
Carrier photoexcitation from levels in quantum dots to states of the continuum in lasing (vol 35, pg 343, 2001)
Authors: Asryan, LV Suris, RA
Citation: Lv. Asryan et Ra. Suris, Carrier photoexcitation from levels in quantum dots to states of the continuum in lasing (vol 35, pg 343, 2001), SEMICONDUCT, 35(8), 2001, pp. 979-979
Carrier photoexcitation from levels in quantum dots to states of the continuum in lasing
Authors: Asryan, LV Suris, RA
Citation: Lv. Asryan et Ra. Suris, Carrier photoexcitation from levels in quantum dots to states of the continuum in lasing, SEMICONDUCT, 35(3), 2001, pp. 343-346
Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser
Authors: Asryan, LV Grundmann, M Ledentsov, NN Stier, O Suris, RA Bimberg, D
Citation: Lv. Asryan et al., Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser, J APPL PHYS, 90(3), 2001, pp. 1666-1668
Tunneling-injection quantum-dot laser: Ultrahigh temperature stability
Authors: Asryan, LV Luryi, S
Citation: Lv. Asryan et S. Luryi, Tunneling-injection quantum-dot laser: Ultrahigh temperature stability, IEEE J Q EL, 37(7), 2001, pp. 905-910
Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
Authors: Maximov, MV Asryan, LV Shernyakov, YM Tsatsul'nikov, AF Kaiander, IN Nikolaev, VV Kovsh, AR Mikhrin, SS Ustinov, VM Zhukov, AE Alferov, ZI Ledenstov, NN Bimberg, D
Citation: Mv. Maximov et al., Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation, IEEE J Q EL, 37(5), 2001, pp. 676-683
Effect of excited-state transitions on the threshold characteristics of a quantum dot laser
Authors: Asryan, LV Grundmann, M Ledentsov, NN Stier, O Suris, RA Bimberg, D
Citation: Lv. Asryan et al., Effect of excited-state transitions on the threshold characteristics of a quantum dot laser, IEEE J Q EL, 37(3), 2001, pp. 418-425
Threshold characteristics of InGaAsP/InP multiple quantum well lasers
Authors: Asryan, LV Gun'ko, NA Polkovnikov, AS Zegrya, GG Suris, RA Lau, PK Makino, T
Citation: Lv. Asryan et al., Threshold characteristics of InGaAsP/InP multiple quantum well lasers, SEMIC SCI T, 15(12), 2000, pp. 1131-1140
Longitudinal spatial hole burning in a quantum-dot laser
Authors: Asryan, LV Suris, RA
Citation: Lv. Asryan et Ra. Suris, Longitudinal spatial hole burning in a quantum-dot laser, IEEE J Q EL, 36(10), 2000, pp. 1151-1160
Role of thermal ejection of carriers in the burning of spatial holes in quantum dot lasers
Authors: Asryan, LV Suris, RA
Citation: Lv. Asryan et Ra. Suris, Role of thermal ejection of carriers in the burning of spatial holes in quantum dot lasers, SEMICONDUCT, 33(9), 1999, pp. 981-984
High-power and high-temperature operation of InGaAsP/InP multiple quantum well lasers
Authors: Asryan, LV Gun'ko, NA Polkovnikov, AS Suris, RA Zegrya, GG Elenkrig, BB Smetona, S Simmons, JG Lau, PK Makino, T
Citation: Lv. Asryan et al., High-power and high-temperature operation of InGaAsP/InP multiple quantum well lasers, SEMIC SCI T, 14(12), 1999, pp. 1069-1075
Spatial hole burning and multimode generation threshold in quantum-dot lasers
Authors: Asryan, LV Suris, RA
Citation: Lv. Asryan et Ra. Suris, Spatial hole burning and multimode generation threshold in quantum-dot lasers, APPL PHYS L, 74(9), 1999, pp. 1215-1217
Risultati: 1-11 |