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Results:
1-21
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Results: 21
Authors:
Croci, S
Pecheur, A
Autran, JL
Vedda, A
Caccavale, F
Martini, M
Spinolo, G
Citation: S. Croci et al., SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization, J VAC SCI A, 19(5), 2001, pp. 2670-2675
Authors:
Bidaud, M
Guyader, F
Arnaud, F
Autran, JL
Barla, K
Citation: M. Bidaud et al., 1.5-2.5 nm RTP gate oxides: process feasibility, properties and limitations, J NON-CRYST, 280(1-3), 2001, pp. 32-38
Authors:
Pic, N
Glachant, A
Nitsche, S
Hoarau, JY
Goguenheim, D
Vuillaume, D
Sibai, A
Autran, JL
Citation: N. Pic et al., Determination of the electrical properties of 2.5 nm thick silicon-based dielectric films: thermally grown SiOx, J NON-CRYST, 280(1-3), 2001, pp. 69-77
Authors:
Sune, J
Oriols, X
Autran, JL
Citation: J. Sune et al., Non-equilibrium gate tunneling current in ultra-thin (< 2 nm) oxide MOS devices, J NON-CRYST, 280(1-3), 2001, pp. 127-131
Authors:
Masson, P
Autran, JL
Ghibaudo, G
Citation: P. Masson et al., An improved time domain analysis of the charge pumping current, J NON-CRYST, 280(1-3), 2001, pp. 255-260
Authors:
Paillet, P
Vedda, A
Autran, JL
Spinolo, G
Citation: P. Paillet et al., SiO2 and advanced dielectrics 3 - Proceedings of the 3rd Symposium on SiO2and Advanced Dielectrics - Fuveau (Aix-Marseille), France June 19-21, 2000- Preface, J NON-CRYST, 280(1-3), 2001, pp. VII-VII
Authors:
Ghibaudo, G
Clerc, R
Vincent, E
Bruyere, S
Autran, JL
Citation: G. Ghibaudo et al., Gate dielectrics for ultimate CMOS technologies - Limitations and alternative solutions, CR AC S IV, 1(7), 2000, pp. 911-927
Authors:
Autran, JL
Masson, P
Freud, N
Raynaud, C
Riekel, C
Citation: Jl. Autran et al., Micro-irradiation experiments in MOS transistors using synchrotron radiation, IEEE NUCL S, 47(3), 2000, pp. 574-579
Authors:
Chaneliere, C
Four, S
Autran, JL
Devine, RAB
Citation: C. Chaneliere et al., Dielectric permittivity of amorphous and hexagonal electron cyclotron resonance plasma deposited Ta2O5 thin films, EL SOLID ST, 2(6), 1999, pp. 291-293
Authors:
Masson, P
Autran, JL
Brini, J
Citation: P. Masson et al., On the tunneling component of charge pumping current in ultrathin gate oxide MOSFET's, IEEE ELEC D, 20(2), 1999, pp. 92-94
Authors:
Masson, P
Morfouli, P
Autran, JL
Wortman, JJ
Citation: P. Masson et al., Electrical characterization of n-channel MOSFETs with oxynitride gate dielectric formed by low-pressure Rapid Thermal Chemical Vapor Deposition, MICROEL ENG, 48(1-4), 1999, pp. 211-214
Authors:
Croci, S
Voisin, JM
Plossu, C
Raynaud, C
Autran, JL
Boivin, P
Mirabel, JM
Citation: S. Croci et al., Extraction and evolution of Fowler-Nordheim tunneling parameters of thin gate oxides under EEPROM-like dynamic degradation, MICROEL REL, 39(6-7), 1999, pp. 879-884
Authors:
Chaneliere, C
Four, S
Autran, JL
Devine, RAB
Citation: C. Chaneliere et al., Comparison between the properties of amorphous and crystalline Ta2O5 thin films deposited on Si, MICROEL REL, 39(2), 1999, pp. 261-268
Authors:
Pecheur, A
Autran, JL
Lazarri, JP
Pinard, P
Citation: A. Pecheur et al., Properties of SiO2 films deposited on silicon at low temperatures by plasma enhanced decomposition of hexamethyldisilazane, J NON-CRYST, 245, 1999, pp. 20-26
Authors:
Masson, P
Morfouli, P
Autran, JL
Brini, J
Balland, B
Vogel, EM
Wortman, JJ
Citation: P. Masson et al., Electrical properties of oxynitride thin films using noise and charge pumping measurements, J NON-CRYST, 245, 1999, pp. 54-58
Authors:
Pierunek, S
Pogany, D
Autran, JL
Leroy, B
Citation: S. Pierunek et al., Study of hot carrier degradation in dram cells combining random telegraph signal and charge pumping measurements, J NON-CRYST, 245, 1999, pp. 59-66
Authors:
Chaneliere, C
Autran, JL
Four, S
Devine, RAB
Balland, B
Citation: C. Chaneliere et al., Theoretical and experimental study of the conduction mechanism in Al/Ta2O5/SiO2/Si and Al/Ta2O5/Si3N4/Si structures, J NON-CRYST, 245, 1999, pp. 73-78
Authors:
Spinolo, G
Devine, RAB
Vedda, A
Autran, JL
Citation: G. Spinolo et al., SiO2 and advanced dielectrics - Proceedings of the 2nd Franco-Italian symposium on SiO2 and advanced dielectrics - L'Aquila, Italy, June 15-17, 1998 - Preface, J NON-CRYST, 245, 1999, pp. VII-VII
Authors:
Raynaud, C
Autran, JL
Citation: C. Raynaud et Jl. Autran, Theoretical investigation of incomplete ionization of dopants in 6H-SiC metal-oxide-semiconductor capacitors, J APPL PHYS, 86(4), 1999, pp. 2232-2236
Authors:
Chaneliere, C
Autran, JL
Devine, RAB
Citation: C. Chaneliere et al., Conduction mechanisms in Ta2O5/SiO2 and Ta2O5/Si3N4 stacked structures on Si, J APPL PHYS, 86(1), 1999, pp. 480-486
Authors:
Autran, JL
Balland, B
Barbottin, G
Citation: Jl. Autran et al., Charge pumping techniques - Their use for diagnosis and interface states studies in MOS transistors, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 405-493
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