Authors:
Huang, Y
Aziz, MJ
Hutchinson, JW
Evans, AG
Saha, R
Nix, WD
Citation: Y. Huang et al., Comparison of mechanical properties of Ni3Al thin films in disordered FCC and ordered L1(2) phases, ACT MATER, 49(14), 2001, pp. 2853-2861
Citation: W. Barvosa-carter et Mj. Aziz, Time-resolved measurements of stress effects on solid-phase epitaxy of intrinsic and doped Si, APPL PHYS L, 79(3), 2001, pp. 356-358
Authors:
Dubon, OD
Evans, PG
Chervinsky, JF
Aziz, MJ
Spaepen, F
Golovchenko, JA
Chisholm, MF
Muller, DA
Citation: Od. Dubon et al., Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pbmonolayer, APPL PHYS L, 78(11), 2001, pp. 1505-1507
Authors:
Erlebacher, J
Aziz, MJ
Chason, E
Sinclair, MB
Floro, JA
Citation: J. Erlebacher et al., Nonlinear amplitude evolution during spontaneous patterning of ion-bombarded Si(001), J VAC SCI A, 18(1), 2000, pp. 115-120
Citation: Cb. Arnold et Mj. Aziz, Stoichiometry issues in pulsed-laser deposition of alloys grown from multicomponent targets, APPL PHYS A, 69, 1999, pp. S23-S27
Authors:
Zhao, YC
Aziz, MJ
Gossmann, HJ
Mitha, S
Schiferl, D
Citation: Yc. Zhao et al., Activation volume for antimony diffusion in silicon and implications for strained films, APPL PHYS L, 75(7), 1999, pp. 941-943