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Results:
1-9
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Results: 9
Authors:
TIXIER A
SENEZ V
BACCUS B
MARMIROLI A
COLPANI P
REBORA A
CARNEVALE GP
Citation: A. Tixier et al., INFLUENCE OF THE SILICON-NITRIDE OXIDATION ON THE PERFORMANCES OF NCLAD ISOLATION, Microelectronics and reliability, 38(5), 1998, pp. 795-805
Authors:
BACCUS B
VANDENBOSSCHE E
Citation: B. Baccus et E. Vandenbossche, A CONTINUOUS AND GENERAL-MODEL FOR BORON-DIFFUSION DURING POSTIMPLANTANNEALING INCLUDING DAMAGED AND AMORPHIZING CONDITIONS, IEEE transactions on semiconductor manufacturing, 9(1), 1996, pp. 59-66
Authors:
LORENZ J
BACCUS B
HENKE W
Citation: J. Lorenz et al., 3-DIMENSIONAL PROCESS SIMULATION, Microelectronic engineering, 34(1), 1996, pp. 85-100
Authors:
FERREIRA P
SENEZ V
BACCUS B
Citation: P. Ferreira et al., MECHANICAL-STRESS ANALYSIS OF AN LDD MOSFET STRUCTURE, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1525-1532
Authors:
SENEZ V
COLLARD D
FERREIRA P
BACCUS B
Citation: V. Senez et al., 2-DIMENSIONAL SIMULATION OF LOCAL OXIDATION OF SILICON - CALIBRATED VISCOELASTIC FLOW-ANALYSIS, I.E.E.E. transactions on electron devices, 43(5), 1996, pp. 720-731
Authors:
BACCUS B
VANDENBOSSCHE E
Citation: B. Baccus et E. Vandenbossche, MODELING HIGH-CONCENTRATION BORON-DIFFUSION WITH DYNAMIC CLUSTERING -INFLUENCE OF THE INITIAL CONDITIONS, Microelectronics, 26(2-3), 1995, pp. 235-242
Authors:
BACCUS B
VANDENBOSSCHE E
LANNOO M
Citation: B. Baccus et al., MODELING HIGH-CONCENTRATION BORON-DIFFUSION UNDER AMORPHIZATION CONDITIONS, Journal of applied physics, 77(11), 1995, pp. 5630-5641
Authors:
SENEZ V
COLLARD D
BACCUS B
BRAULT M
LEBAILLY J
Citation: V. Senez et al., ANALYSIS AND APPLICATION OF A VISCOELASTIC MODEL FOR SILICON OXIDATION, Journal of applied physics, 76(6), 1994, pp. 3285-3296
Authors:
VANDENBOSSCHE E
BACCUS B
Citation: E. Vandenbossche et B. Baccus, MODELING INACTIVE BORON DURING PREDEPOSITION PROCESSES, Journal of applied physics, 73(11), 1993, pp. 7322-7330
Risultati:
1-9
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