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Results: 1-17 |
Results: 17
A NONLINEAR MICROWAVE MOSFET MODEL FOR SPICE SIMULATORS
Authors: BIBER CE SCHMATZ ML MORF T LOTT U BACHTOLD W
Citation: Ce. Biber et al., A NONLINEAR MICROWAVE MOSFET MODEL FOR SPICE SIMULATORS, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 604-610
EFFECTS OF EPITAXIAL LIFT-OFF ON THE DC, RF, AND THERMAL-PROPERTIES OF MESFETS ON VARIOUS HOST MATERIALS
Authors: MORF T BIBER C BACHTOLD W
Citation: T. Morf et al., EFFECTS OF EPITAXIAL LIFT-OFF ON THE DC, RF, AND THERMAL-PROPERTIES OF MESFETS ON VARIOUS HOST MATERIALS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1407-1413
LOW-FREQUENCY NOISE PROPERTIES OF SELECTIVELY DRY-ETCHED INP HEMTS
Authors: DURAN HC REN L BECK M PY MA ILEGEMS M BACHTOLD W
Citation: Hc. Duran et al., LOW-FREQUENCY NOISE PROPERTIES OF SELECTIVELY DRY-ETCHED INP HEMTS, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1219-1225
-78-DB SHOT-NOISE LIMITED OPTICAL LOW-COHERENCE REFLECTOMETRY AT 42-MS SCAN SPEED/
Authors: LINDGREN F GIANOTTI R WALTI R SALATHE RP HAAS A NUSSBERGER M SCHMATZ ML BACHTOLD W
Citation: F. Lindgren et al., -78-DB SHOT-NOISE LIMITED OPTICAL LOW-COHERENCE REFLECTOMETRY AT 42-MS SCAN SPEED/, IEEE photonics technology letters, 9(12), 1997, pp. 1613-1615
AN INVESTIGATION OF VARIOUS POST-RIE CLEANING PROCESSES FOR DRY-ETCHED INP-BASED HEMTS
Authors: DURAN HC CHEUNG R PATRICK W BACHTOLD W PFUND I HAHNER G
Citation: Hc. Duran et al., AN INVESTIGATION OF VARIOUS POST-RIE CLEANING PROCESSES FOR DRY-ETCHED INP-BASED HEMTS, Microelectronic engineering, 35(1-4), 1997, pp. 67-70
APPROACH FOR DEVELOPING A LARGE-SIGNAL MODEL OF A 150-GHZ HEMT
Authors: DISKUS CG BERGAMASCHI C SCHEFER M PATRICK W KLEPSER BUH BACHTOLD W
Citation: Cg. Diskus et al., APPROACH FOR DEVELOPING A LARGE-SIGNAL MODEL OF A 150-GHZ HEMT, International journal of microwave and millimeter-wave computer-aided engineering, 6(4), 1996, pp. 234-242
LOW-NOISE PROPERTIES OF DRY GATE RECESS ETCHED INP HEMTS
Authors: DURAN HC KLEPSER BUH BACHTOLD W
Citation: Hc. Duran et al., LOW-NOISE PROPERTIES OF DRY GATE RECESS ETCHED INP HEMTS, IEEE electron device letters, 17(10), 1996, pp. 482-484
INTEGRATED COPLANAR MM-WAVE AMPLIFIER WITH GAIN-CONTROL USING A DUAL-GATE INP HEMT
Authors: SCHEFER M MEIER HP KLEPSER BU PATRICK W BACHTOLD W
Citation: M. Schefer et al., INTEGRATED COPLANAR MM-WAVE AMPLIFIER WITH GAIN-CONTROL USING A DUAL-GATE INP HEMT, IEEE transactions on microwave theory and techniques, 44(12), 1996, pp. 2379-2383
RF AND 1 F NOISE INVESTIGATIONS ON MESFETS AND CIRCUITS TRANSPLANTED BY EPITAXIAL LIFT-OFF/
Authors: MORF T BRYS C VANDAELE P DEMEESTER P BENEDICKTER H BACHTOLD W
Citation: T. Morf et al., RF AND 1 F NOISE INVESTIGATIONS ON MESFETS AND CIRCUITS TRANSPLANTED BY EPITAXIAL LIFT-OFF/, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1489-1494
MONOLITHIC COPLANAR, VARACTOR TUNABLE V-BAND HEMT OSCILLATOR WITH INJECTION LOCKING CAPABILITY
Authors: SCHEFER M LOTT U BENEDICKTER H KLEPSER BU PATRICK W BACHTOLD W
Citation: M. Schefer et al., MONOLITHIC COPLANAR, VARACTOR TUNABLE V-BAND HEMT OSCILLATOR WITH INJECTION LOCKING CAPABILITY, Electronics Letters, 32(20), 1996, pp. 1899-1900
HIGH-PERFORMANCE MILLIMETER-WAVE AMPLIFIERS WITH DRY GATE RECESS ETCHED INP HEMTS
Authors: DURAN HC SCHEFER M PATRICK W BACHTOLD W BECK M
Citation: Hc. Duran et al., HIGH-PERFORMANCE MILLIMETER-WAVE AMPLIFIERS WITH DRY GATE RECESS ETCHED INP HEMTS, Electronics Letters, 32(15), 1996, pp. 1375-1377
ATOMIC-FORCE MICROSCOPY INVESTIGATIONS OF DRY-ETCHED GATE RECESSES FOR INGAAS INALAS-BASED HIGH-ELECTRON-MOBILITY TRANSISTORS USING METHANE-HYDROGEN REACTIVE ION ETCHING/
Authors: DURAN HC PATRICK W BACHTOLD W
Citation: Hc. Duran et al., ATOMIC-FORCE MICROSCOPY INVESTIGATIONS OF DRY-ETCHED GATE RECESSES FOR INGAAS INALAS-BASED HIGH-ELECTRON-MOBILITY TRANSISTORS USING METHANE-HYDROGEN REACTIVE ION ETCHING/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2386-2389
ANALYTICAL BIAS DEPENDENT NOISE MODEL FOR INP HEMTS
Authors: KLEPSER BUH BERGAMASCHI C SCHEFER M DISKUS CG PATRICK W BACHTOLD W
Citation: Buh. Klepser et al., ANALYTICAL BIAS DEPENDENT NOISE MODEL FOR INP HEMTS, I.E.E.E. transactions on electron devices, 42(11), 1995, pp. 1882-1889
HIGH-SPEED, MONOLITHICALLY INTEGRATED PIN-HEMT PHOTORECEIVER FABRICATED ON INP WITH 18GHZ BANDWIDTH
Authors: KLEPSER BUH SPICHER J BECK M BERGAMASCHI C PATRICK W BACHTOLD W
Citation: Buh. Klepser et al., HIGH-SPEED, MONOLITHICALLY INTEGRATED PIN-HEMT PHOTORECEIVER FABRICATED ON INP WITH 18GHZ BANDWIDTH, Electronics Letters, 31(21), 1995, pp. 1831-1833
COMPARISON OF COPLANAR MATCHING NETWORKS FOR V-BAND AMPLIFIERS
Authors: SCHEFER M KLEPSER BU MEIER HP PATRICK W LOTT U BACHTOLD W
Citation: M. Schefer et al., COMPARISON OF COPLANAR MATCHING NETWORKS FOR V-BAND AMPLIFIERS, Electronics Letters, 31(16), 1995, pp. 1351-1353
COMPOUND CAVITY GAIN OF TANDEM-ELECTRODE MULTIPLE-QUANTUM-WELL ALGAASLASER-DIODES
Authors: KNOP W HARDER C BACHTOLD W
Citation: W. Knop et al., COMPOUND CAVITY GAIN OF TANDEM-ELECTRODE MULTIPLE-QUANTUM-WELL ALGAASLASER-DIODES, IEEE photonics technology letters, 6(3), 1994, pp. 338-340
SELECTIVE GATE RECESS ETCHING OF GAINAS ALLNAS BASED HEMTS USING A CH4/H-2 PLASMA WITHOUT SUBSEQUENT ANNEALING/
Authors: THOMAS KM PATRICK W BACHTOLD W
Citation: Km. Thomas et al., SELECTIVE GATE RECESS ETCHING OF GAINAS ALLNAS BASED HEMTS USING A CH4/H-2 PLASMA WITHOUT SUBSEQUENT ANNEALING/, Electronics Letters, 30(15), 1994, pp. 1251-1252
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