Citation: Gf. Bai et al., ELECTROLUMINESCENCE FROM AU NATIVE SILICON-OXIDE LAYER P(-SI AND AU NATIVE SILICON-OXIDE LAYER N(+)-SI STRUCTURES UNDER REVERSE BIASES()), Journal of physics. Condensed matter (Print), 10(44), 1998, pp. 717-721
Authors:
BAI GF
LI AP
ZHANG YX
SUN YK
MA SY
QIN GG
MA ZC
ZONG WH
Citation: Gf. Bai et al., ELECTROLUMINESCENCE FROM AU EXTRA THIN NANOSIZE GE PARTICLES EMBEDDEDSILICON-OXIDE FILM P-SI AND AU EXTRA THIN NANOSIZE SI PARTICLES EMBEDDED SILICON-OXIDE FILM P-SI, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1998, pp. 127-131
Authors:
QIN GG
LI AP
BAI GF
ZHANG LD
MA ZC
ZONG WH
WANG X
HU XW
Citation: Gg. Qin et al., EFFECTS OF CHEMICAL-COMPOSITION OF SI OXYNITRIDE ON ELECTROLUMINESCENCE FROM SEMITRANSPARENT AU EXTRA THIN SI OXYNITRIDE FILM P-SI STRUCTURES, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1998, pp. 179-185
Authors:
LI AP
BAI GF
CHEN KM
MA ZC
ZONG WH
ZHANG YX
QIN GG
Citation: Ap. Li et al., ELECTROLUMINESCENCE FROM AU EXTRA-THIN SI-RICH SIO2 FILM/N(+)-SI UNDER REVERSE BIASES AND ITS MECHANISM/, Thin solid films, 325(1-2), 1998, pp. 137-139