Authors: BAI GF WANG YQ MA ZC ZONG WH QIN GG

Citation: Gf. Bai et al., ELECTROLUMINESCENCE FROM AU NATIVE SILICON-OXIDE LAYER P(-SI AND AU NATIVE SILICON-OXIDE LAYER N(+)-SI STRUCTURES UNDER REVERSE BIASES()), Journal of physics. Condensed matter (Print), 10(44), 1998, pp. 717-721

Authors: BAI GF LI AP ZHANG YX SUN YK MA SY QIN GG MA ZC ZONG WH

Citation: Gf. Bai et al., ELECTROLUMINESCENCE FROM AU EXTRA THIN NANOSIZE GE PARTICLES EMBEDDEDSILICON-OXIDE FILM P-SI AND AU EXTRA THIN NANOSIZE SI PARTICLES EMBEDDED SILICON-OXIDE FILM P-SI, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1998, pp. 127-131

Authors: QIN GG LI AP BAI GF ZHANG LD MA ZC ZONG WH WANG X HU XW

Citation: Gg. Qin et al., EFFECTS OF CHEMICAL-COMPOSITION OF SI OXYNITRIDE ON ELECTROLUMINESCENCE FROM SEMITRANSPARENT AU EXTRA THIN SI OXYNITRIDE FILM P-SI STRUCTURES, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1998, pp. 179-185

Authors: LI AP BAI GF CHEN KM MA ZC ZONG WH ZHANG YX QIN GG

Citation: Ap. Li et al., ELECTROLUMINESCENCE FROM AU EXTRA-THIN SI-RICH SIO2 FILM/N(+)-SI UNDER REVERSE BIASES AND ITS MECHANISM/, Thin solid films, 325(1-2), 1998, pp. 137-139

Authors: BAI GF QIAO YP MA ZC ZONG WH QIN GG

Citation: Gf. Bai et al., ELECTROLUMINESCENCE FROM SI SI OXYNITRIDE SUPERLATTICES/, Applied physics letters, 72(26), 1998, pp. 3408-3410