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Results:
1-7
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Results: 7
Authors:
CAZARRE A
ANDRIEUX L
TASSELLI J
CAMPS T
MARTY A
BAILBE JP
Citation: A. Cazarre et al., HIGH-POWER AND LINEARITY PERFORMANCES OF A 4-EMITTER FINGER ALGAAS GAAS HBT IN S-BAND/, Microwave and optical technology letters, 17(5), 1998, pp. 306-308
Authors:
SOUVERAIN P
CAMPS T
FALEH MS
CAZARRE A
TASSELLI J
MARTY A
BAILBE JP
Citation: P. Souverain et al., 3-DIMENSIONAL MODELING OF THE HEAT-FLOW INTO A GAAS SUBSTRATE - INFLUENCE OF THERMAL PHENOMENA ON THE RF BEHAVIOR OF POWER HBTS AND TECHNOLOGICAL OPTIMIZATION, Microelectronics and reliability, 38(4), 1998, pp. 553-557
Authors:
ANDRIEUX L
CAZARRE A
BAILBE JP
MARTY A
Citation: L. Andrieux et al., POWER-AMPLIFIER PERFORMANCE AND MODELING OF ONE-EMITTER-FINGER GAALASGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR/, IEE proceedings. Circuits, devices and systems, 143(6), 1996, pp. 352-356
Authors:
FALEH MS
TASSELLI J
BAILBE JP
MARTY A
Citation: Ms. Faleh et al., TRANSISTOR-BASED EVALUATION OF CONDUCTION-BAND OFFSET IN GAINP GAAS HETEROJUNCTION/, Applied physics letters, 69(9), 1996, pp. 1288-1290
Authors:
BAILBE JP
ANDRIEUX L
CAZARRE A
CAMPS T
MARTY A
TASSELLI J
GRANIER H
Citation: Jp. Bailbe et al., THEORY AND EXPERIMENT OF THE TEMPERATURE-DEPENDENCE OF GAALAS GAAS HBTS CHARACTERISTICS FOR POWER-AMPLIFIER APPLICATIONS/, Solid-state electronics, 38(2), 1995, pp. 279-286
Authors:
CAMPS T
MARTY A
TASSELLI J
CAZARRE A
BAILBE JP
Citation: T. Camps et al., EMITTER EXCESS RESISTANCE IN GAALAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Solid-state electronics, 37(12), 1994, pp. 1907-1911
Authors:
MARTY A
CAMPS T
TASSELLI J
PULFREY DL
BAILBE JP
Citation: A. Marty et al., A SELF-CONSISTENT DC-AC 2-DIMENSIONAL ELECTROTHERMAL MODEL FOR GAALASGAAS MICROWAVE-POWER HBTS/, I.E.E.E. transactions on electron devices, 40(7), 1993, pp. 1202-1210
Risultati:
1-7
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