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Results: 1-15 |
Results: 15
NARROW-CHANNEL GAINP INGAAS/GAAS MODFETS FOR HIGH-FREQUENCY AND POWERAPPLICATIONS/
Authors: PEREIASLAVETS B MARTIN GH EASTMAN LF YANKA RW BALLINGALL JM BRAUNSTEIN J BACHEM KH RIDLEY BK
Citation: B. Pereiaslavets et al., NARROW-CHANNEL GAINP INGAAS/GAAS MODFETS FOR HIGH-FREQUENCY AND POWERAPPLICATIONS/, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1341-1348
NONDESTRUCTIVE CHARACTERIZATION OF PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES USING X-RAY-DIFFRACTION AND REFLECTIVITY
Authors: ROGERS TJ BALLINGALL JM LARSEN M HALL EL
Citation: Tj. Rogers et al., NONDESTRUCTIVE CHARACTERIZATION OF PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES USING X-RAY-DIFFRACTION AND REFLECTIVITY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 777-781
A HIGH-CURRENT-GAIN, HIGH-SPEED P-N-P ALGAAS INGAAS/GAAS COLLECTOR-UPHETEROJUNCTION BIPOLAR-TRANSISTOR/
Authors: TSENG HC HSIEH RC HWANG KC BALLINGALL JM
Citation: Hc. Tseng et al., A HIGH-CURRENT-GAIN, HIGH-SPEED P-N-P ALGAAS INGAAS/GAAS COLLECTOR-UPHETEROJUNCTION BIPOLAR-TRANSISTOR/, Applied physics letters, 67(6), 1995, pp. 837-839
PHOTOLUMINESCENCE EVALUATION OF PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR DEVICE WAFERS
Authors: MARTIN PA BALLINGALL JM HO P ROGERS TJ
Citation: Pa. Martin et al., PHOTOLUMINESCENCE EVALUATION OF PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR DEVICE WAFERS, Journal of electronic materials, 23(12), 1994, pp. 1303-1307
TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE IN MODULATION-DOPED PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR ALXGA1-XAS INYGA1-YAS/GAAS STRUCTURES/
Authors: YU PW JOGAI B ROGERS TJ MARTIN PA BALLINGALL JM
Citation: Pw. Yu et al., TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE IN MODULATION-DOPED PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR ALXGA1-XAS INYGA1-YAS/GAAS STRUCTURES/, Journal of applied physics, 76(11), 1994, pp. 7535-7540
MAGNETO-HALL CHARACTERIZATION OF DELTA-DOPED PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES
Authors: LOOK DC JOGAI B STUTZ CE SHERRIFF RE DESALVO GC ROGERS TJ BALLINGALL JM
Citation: Dc. Look et al., MAGNETO-HALL CHARACTERIZATION OF DELTA-DOPED PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES, Journal of applied physics, 76(1), 1994, pp. 328-331
A NOVEL HIGH-POWER OPTOTHYRISTOR BASED ON ALGAAS GAAS FOR PULSED POWER-SWITCHING APPLICATIONS/
Authors: ZHAO JH BURKE T WEINER M CHIN A BALLINGALL JM
Citation: Jh. Zhao et al., A NOVEL HIGH-POWER OPTOTHYRISTOR BASED ON ALGAAS GAAS FOR PULSED POWER-SWITCHING APPLICATIONS/, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 819-825
TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE LINEWIDTH IN MODULATION-DOPED PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR ALXGA1-XAS INYGA1-YAS GAAS STRUCTURES
Authors: YU PW JOGAI B ROGERS TJ MARTIN PA BALLINGALL JM
Citation: Pw. Yu et al., TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE LINEWIDTH IN MODULATION-DOPED PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR ALXGA1-XAS INYGA1-YAS GAAS STRUCTURES, Applied physics letters, 65(25), 1994, pp. 3263-3265
ELECTROCHEMICAL CAPACITANCE-VOLTAGE ANALYSIS OF DELTA-DOPED PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR MATERIAL
Authors: STUTZ CE JOGAI B LOOK DC BALLINGALL JM ROGERS TJ
Citation: Ce. Stutz et al., ELECTROCHEMICAL CAPACITANCE-VOLTAGE ANALYSIS OF DELTA-DOPED PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR MATERIAL, Applied physics letters, 64(20), 1994, pp. 2703-2705
ULTRAFAST LONG-WAVELENGTH PHOTODETECTORS FABRICATED ON LOW-TEMPERATURE INGAAS ON GAAS
Authors: LESTER LF HWANG KC HO P MAZUROWSKI J BALLINGALL JM SUTLIFF J GUPTA S WHITAKER J WILLIAMSON SL
Citation: Lf. Lester et al., ULTRAFAST LONG-WAVELENGTH PHOTODETECTORS FABRICATED ON LOW-TEMPERATURE INGAAS ON GAAS, IEEE photonics technology letters, 5(5), 1993, pp. 511-514
HIGH-SPEED PHOTODETECTOR APPLICATIONS OF GAAS AND INXGA1-XAS GAAS GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY/
Authors: GUPTA S WHITAKER JF WILLIAMSON SL MOUROU GA LESTER L HWANG KC HO P MAZUROWSKI J BALLINGALL JM
Citation: S. Gupta et al., HIGH-SPEED PHOTODETECTOR APPLICATIONS OF GAAS AND INXGA1-XAS GAAS GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY/, Journal of electronic materials, 22(12), 1993, pp. 1449-1455
SUBPICOSECOND CARRIER RESPONSE OF UNANNEALED LOW-TEMPERATURE-GROWN GAAS VS TEMPERATURE
Authors: WANG HH WHITAKER JF CHIN A MAZUROWSKI J BALLINGALL JM
Citation: Hh. Wang et al., SUBPICOSECOND CARRIER RESPONSE OF UNANNEALED LOW-TEMPERATURE-GROWN GAAS VS TEMPERATURE, Journal of electronic materials, 22(12), 1993, pp. 1461-1464
INXGA1-XAS (X=0.25-0.35) GROWN AT LOW-TEMPERATURE
Authors: BALLINGALL JM HO P MAZUROWSKI J LESTER L HWANG KC SUTLIFF J GUPTA S WHITAKER J
Citation: Jm. Ballingall et al., INXGA1-XAS (X=0.25-0.35) GROWN AT LOW-TEMPERATURE, Journal of electronic materials, 22(12), 1993, pp. 1471-1475
PSEUDOMORPHIC INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS
Authors: BALLINGALL JM MARTIN PA MAZUROWSKI J HO P CHAO PC SMITH PM DUH KHG
Citation: Jm. Ballingall et al., PSEUDOMORPHIC INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS, Thin solid films, 231(1-2), 1993, pp. 95-106
REVERSE-BIASED PERFORMANCE OF A MOLECULAR-BEAM-EPITAXIAL-GROWN ALGAASGAAS HIGH-POWER OPTOTHYRISTOR FOR PULSED POWER-SWITCHING APPLICATIONS/
Authors: ZHAO JH BURKE T WEINER M CHIN A BALLINGALL JM
Citation: Jh. Zhao et al., REVERSE-BIASED PERFORMANCE OF A MOLECULAR-BEAM-EPITAXIAL-GROWN ALGAASGAAS HIGH-POWER OPTOTHYRISTOR FOR PULSED POWER-SWITCHING APPLICATIONS/, Journal of applied physics, 74(8), 1993, pp. 5225-5230
Risultati: 1-15 |