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Results: 5

Authors: BANO E OUISSE T LEONHARD C GOLZ A VONKAMIENSKI EGS
Citation: E. Bano et al., HIGH-FIELD AND HIGH-TEMPERATURE STRESS OF N-SIC MOS CAPACITORS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1489-1493

Authors: BANO E OUISSE T LEONHARD C GOLZ A VONKAMIENSKI EGS
Citation: E. Bano et al., HIGH-FIELD FOWLER-NORDHEIM STRESS OF N-TYPE SILICON-CARBIDE METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Semiconductor science and technology, 12(5), 1997, pp. 525-528

Authors: BANO E OUISSE T SCHARNHOLZ SP GOLZ A VONKAMIENSKI EGS
Citation: E. Bano et al., ANALYTICAL MODELING OF THERMALLY-ACTIVATED TRANSPORT IN SIC INVERSION-LAYERS, Electronics Letters, 33(3), 1997, pp. 243-245

Authors: BILLON T BANO E DICIOCCIO L OUISSE T LASSAGNE P JAUSSAUD C
Citation: T. Billon et al., ELECTRICAL AND PHYSICOCHEMICAL CHARACTERIZATIONS OF THE SIO2 SIC INTERFACE/, Microelectronic engineering, 28(1-4), 1995, pp. 193-196

Authors: BANO E OUISSE T DICIOCCIO L KARMANN S
Citation: E. Bano et al., SURFACE-POTENTIAL FLUCTUATIONS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS FABRICATED ON DIFFERENT SILICON-CARBIDE POLYTYPES, Applied physics letters, 65(21), 1994, pp. 2723-2724
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