Authors:
BANO E
OUISSE T
LEONHARD C
GOLZ A
VONKAMIENSKI EGS
Citation: E. Bano et al., HIGH-FIELD FOWLER-NORDHEIM STRESS OF N-TYPE SILICON-CARBIDE METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Semiconductor science and technology, 12(5), 1997, pp. 525-528
Authors:
BILLON T
BANO E
DICIOCCIO L
OUISSE T
LASSAGNE P
JAUSSAUD C
Citation: T. Billon et al., ELECTRICAL AND PHYSICOCHEMICAL CHARACTERIZATIONS OF THE SIO2 SIC INTERFACE/, Microelectronic engineering, 28(1-4), 1995, pp. 193-196
Citation: E. Bano et al., SURFACE-POTENTIAL FLUCTUATIONS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS FABRICATED ON DIFFERENT SILICON-CARBIDE POLYTYPES, Applied physics letters, 65(21), 1994, pp. 2723-2724