AAAAAA

   
Results: 1-10 |
Results: 10
POLARITY RELATED PROBLEMS IN GROWTH OF GAN HOMOEPITAXIAL LAYERS
Authors: LESZCZYNSKI M PRYSTAWKO P SLIWINSKI A SUSKI T LITWINSTASZEWSKA E POROWSKI S PASZKIEWICZ R TLACZALA M BEAUMONT B GIBART P BARSKI A LANGER R KNAP W FRAYSSINET E
Citation: M. Leszczynski et al., POLARITY RELATED PROBLEMS IN GROWTH OF GAN HOMOEPITAXIAL LAYERS, Acta Physica Polonica. A, 94(3), 1998, pp. 427-430
MECHANISMS OF YELLOW AND RED PHOTOLUMINESCENCE IN WURTZITE AND CUBIC GAN
Authors: GODLEWSKI M SUSKI T GRZEGORY I POROWSKI S LANGER R BARSKI A BERGMAN JP MONEMAR B GOLDYS EM PHILLIPS MR
Citation: M. Godlewski et al., MECHANISMS OF YELLOW AND RED PHOTOLUMINESCENCE IN WURTZITE AND CUBIC GAN, Acta Physica Polonica. A, 94(2), 1998, pp. 326-330
GROWTH OF ALUMINUM NITRIDE ON (111) SILICON - MICROSTRUCTURE AND INTERFACE STRUCTURE
Authors: BOURRET A BARSKI A ROUVIERE JL RENAUD G BARBIER A
Citation: A. Bourret et al., GROWTH OF ALUMINUM NITRIDE ON (111) SILICON - MICROSTRUCTURE AND INTERFACE STRUCTURE, Journal of applied physics, 83(4), 1998, pp. 2003-2009
OPTICAL-PROPERTIES OF GAN EPILAYERS GROWN ON SI(111) AND SI(001) SUBSTRATES
Authors: GODLEWSKI M BERGMAN JP MONEMAR B ROSSNER U LANGER R BARSKI A
Citation: M. Godlewski et al., OPTICAL-PROPERTIES OF GAN EPILAYERS GROWN ON SI(111) AND SI(001) SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 113-116
PHOTOLUMINESCENCE STUDIES OF CUBIC PHASE GAN GROWN BY MOLECULAR-BEAM EPITAXY ON (001)SILICON COVERED WITH SIC LAYER
Authors: GODLEWSKI M IVANOV VY BERGMAN JP MONEMAR B BARSKI A LANGER R
Citation: M. Godlewski et al., PHOTOLUMINESCENCE STUDIES OF CUBIC PHASE GAN GROWN BY MOLECULAR-BEAM EPITAXY ON (001)SILICON COVERED WITH SIC LAYER, Acta Physica Polonica. A, 92(4), 1997, pp. 777-780
COMPACT ELECTRON-CYCLOTRON-RESONANCE PLASMA SOURCE FOR MOLECULAR-BEAMEPITAXY APPLICATIONS
Authors: ROSSNER U BRUNLECUNFF D BARSKI A DAUDIN B
Citation: U. Rossner et al., COMPACT ELECTRON-CYCLOTRON-RESONANCE PLASMA SOURCE FOR MOLECULAR-BEAMEPITAXY APPLICATIONS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2655-2658
THERMAL-EXPANSION OF GAN BULK CRYSTALS AND HOMOEPITAXIAL LAYERS
Authors: LESZCZYNSKI M TEISSEYRE H SUSKI T GRZEGORY I BOCKOWSKI M JUN J PALOSZ B POROWSKI S PAKULA K BARANOWSKI JM BARSKI A
Citation: M. Leszczynski et al., THERMAL-EXPANSION OF GAN BULK CRYSTALS AND HOMOEPITAXIAL LAYERS, Acta Physica Polonica. A, 90(5), 1996, pp. 887-890
OPTICAL-PROPERTIES OF GAN EPILAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY ON ALN BUFFER LAYER ON (111)SI
Authors: GODLEWSKI M BERGMAN JP MONEMAR B ROSSNER U BARSKI A
Citation: M. Godlewski et al., OPTICAL-PROPERTIES OF GAN EPILAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY ON ALN BUFFER LAYER ON (111)SI, Acta Physica Polonica. A, 90(4), 1996, pp. 789-792
TIME-RESOLVED PHOTOLUMINESCENCE STUDIES OF GAN EPILAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY ON AN ALN BUFFER LAYER ON (111)SI
Authors: GODLEWSKI M BERGMAN JP MONEMAR B ROSSNER U BARSKI A
Citation: M. Godlewski et al., TIME-RESOLVED PHOTOLUMINESCENCE STUDIES OF GAN EPILAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY ON AN ALN BUFFER LAYER ON (111)SI, Applied physics letters, 69(14), 1996, pp. 2089-2091
HOW TO INDUCE THE EPITAXIAL-GROWTH OF GALLIUM NITRIDE ON SI(001)
Authors: ROSSNER U BARSKI A ROUVIERE JL BOURRET A MASSIES J DEPARIS C GRANDJEAN N
Citation: U. Rossner et al., HOW TO INDUCE THE EPITAXIAL-GROWTH OF GALLIUM NITRIDE ON SI(001), Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 74-77
Risultati: 1-10 |