Authors:
SUN J
BARTHOLOMEW RF
BELLUR K
SRIVASTAVA A
OSBURN CM
MASNARI NA
WESTHOFF R
Citation: J. Sun et al., PARASITIC RESISTANCE CONSIDERATIONS OF USING ELEVATED SOURCE DRAIN TECHNOLOGY FOR DEEP-SUBMICRON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS/, Journal of the Electrochemical Society, 145(6), 1998, pp. 2131-2137
Citation: Rf. Bartholomew et al., PROCEEDINGS OF THE 10TH INTERNATIONAL-SYMPOSIUM ON NONOXIDE GLASSES -CORNING, NY, USA - JUNE 19-22, 1996 - PREFACE, Journal of non-crystalline solids, 213, 1997, pp. 7-7
Authors:
SUN JJ
BARTHOLOMEW RF
BELLUR K
SRIVASTAVA A
OSBURN CM
MASNARI NA
Citation: Jj. Sun et al., THE EFFECT OF THE ELEVATED SOURCE DRAIN DOPING PROFILE ON PERFORMANCEAND RELIABILITY OF DEEP-SUBMICRON MOSFETS, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1491-1498
Authors:
SUN J
BARTHOLOMEW RF
BELLUR K
SRIVASTAVA A
OSBURN CM
MASNARI NA
WESTHOFF R
Citation: J. Sun et al., A COMPARATIVE-STUDY OF N(+) P JUNCTION FORMATION FOR DEEP-SUBMICRON ELEVATED SOURCE/DRAIN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS/, Journal of the Electrochemical Society, 144(10), 1997, pp. 3659-3664