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Results: 1-15 |
Results: 15
BLUESHIFTING OF INGAASP-INP LASER-DIODES USING A LOW-ENERGY ION-IMPLANTATION TECHNIQUE - COMPARISON BETWEEN STRAINED AND LATTICE-MATCHED QUANTUM-WELL STRUCTURES
Authors: PAQUETTE M AIMEZ V BEAUVAIS J BEERENS J POOLE PJ CHARBONNEAU S ROTH AP
Citation: M. Paquette et al., BLUESHIFTING OF INGAASP-INP LASER-DIODES USING A LOW-ENERGY ION-IMPLANTATION TECHNIQUE - COMPARISON BETWEEN STRAINED AND LATTICE-MATCHED QUANTUM-WELL STRUCTURES, IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 741-745
ELECTRON-BEAM LITHOGRAPHY OF NANOSTRUCTURES USING 2-PROPANOL-WATER AND 2-PROPANOL-METHYL ISOBUTYL KETONE AS DEVELOPERS FOR POLY-METHYLMETHACRYLATE
Authors: LAVALLEE E BEAUVAIS J BEERENS J
Citation: E. Lavallee et al., ELECTRON-BEAM LITHOGRAPHY OF NANOSTRUCTURES USING 2-PROPANOL-WATER AND 2-PROPANOL-METHYL ISOBUTYL KETONE AS DEVELOPERS FOR POLY-METHYLMETHACRYLATE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1255-1257
ELECTRON EFFECTIVE-MASS DETERMINATION IN ASYMMETRIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR HETEROSTRUCTURES USING INXGA1-XAS QUANTUM-WELLAND INAS-GAAS SUPERLATTICE CHANNELS
Authors: CURY LA MATINAGA FM FREIRE SLS MOREIRA MVB BEERENS J PY MA
Citation: La. Cury et al., ELECTRON EFFECTIVE-MASS DETERMINATION IN ASYMMETRIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR HETEROSTRUCTURES USING INXGA1-XAS QUANTUM-WELLAND INAS-GAAS SUPERLATTICE CHANNELS, Superlattices and microstructures, 23(5), 1998, pp. 1019-1025
FAR-INFRARED TRANSMISSION STUDY OF BERNSTEIN MODES IN A 2-DIMENSIONALELECTRON-GAS WITH A TUNABLE LATERAL MODULATION
Authors: LEFEBVRE J BEERENS J FENG Y WASILEWSKI Z BEAUVAIS J LAVALLEE E
Citation: J. Lefebvre et al., FAR-INFRARED TRANSMISSION STUDY OF BERNSTEIN MODES IN A 2-DIMENSIONALELECTRON-GAS WITH A TUNABLE LATERAL MODULATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 821-824
BERNSTEIN MODES IN A LATERALLY MODULATED 2-DIMENSIONAL ELECTRON-GAS
Authors: LEFEBVRE J BEERENS J FENG Y WASILEWSKI Z BEAUVAIS J LAVALLEE E
Citation: J. Lefebvre et al., BERNSTEIN MODES IN A LATERALLY MODULATED 2-DIMENSIONAL ELECTRON-GAS, Semiconductor science and technology, 13(2), 1998, pp. 169-173
CYCLOTRON-RESONANCE IN ASYMMETRIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR HETEROSTRUCTURES USING INXGA1-XAS QUANTUM-WELL AND INAS-GAAS SUPERLATTICE CHANNELS
Authors: CURY LA MATINAGA FM FREIRE SLS MOREIRA MVB BEERENS J PY MA
Citation: La. Cury et al., CYCLOTRON-RESONANCE IN ASYMMETRIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR HETEROSTRUCTURES USING INXGA1-XAS QUANTUM-WELL AND INAS-GAAS SUPERLATTICE CHANNELS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1697-1702
FAR-INFRARED PHOTOCONDUCTIVITY RESONANCE IN THE FISDW PHASE OF (TMTSF)(2)CLO4
Authors: LEFEBVRE J BEERENS J BOURBONNAIS C LENOIR C BATAIL P
Citation: J. Lefebvre et al., FAR-INFRARED PHOTOCONDUCTIVITY RESONANCE IN THE FISDW PHASE OF (TMTSF)(2)CLO4, Synthetic metals, 86(1-3), 1997, pp. 1957-1958
BLUESHIFTING OF INGAASP INP LASER-DIODES BY LOW-ENERGY ION-IMPLANTATION/
Authors: PAQUETTE M BEAUVAIS J BEERENS J POOLE PJ CHARBONNEAU S MINER CJ BLAAUW C
Citation: M. Paquette et al., BLUESHIFTING OF INGAASP INP LASER-DIODES BY LOW-ENERGY ION-IMPLANTATION/, Applied physics letters, 71(26), 1997, pp. 3749-3751
SPIN-RESONANCE IN IN0.53GA0.47AS UNDER HYDROSTATIC-PRESSURE
Authors: CHARLEBOIS S BEERENS J MINER CJ PUETZ N
Citation: S. Charlebois et al., SPIN-RESONANCE IN IN0.53GA0.47AS UNDER HYDROSTATIC-PRESSURE, Physical review. B, Condensed matter, 54(19), 1996, pp. 13456-13459
ELECTRON-SPIN-RESONANCE IN IN0.53GA0.47AS
Authors: BEERENS J MINER CJ PUETZ N
Citation: J. Beerens et al., ELECTRON-SPIN-RESONANCE IN IN0.53GA0.47AS, Semiconductor science and technology, 10(9), 1995, pp. 1233-1236
GAP DETERMINATION IN THE FIELD-INDUCED-SPIN-DENSITY-WAVE STATE OF (TMTSF)2CLO4 VIA FAR-INFRARED PHOTOCONDUCTIVITY
Authors: LEFEBVRE J BEERENS J BOURBONNAIS C CARON LG LENOIR C BATAIL P
Citation: J. Lefebvre et al., GAP DETERMINATION IN THE FIELD-INDUCED-SPIN-DENSITY-WAVE STATE OF (TMTSF)2CLO4 VIA FAR-INFRARED PHOTOCONDUCTIVITY, Physical review letters, 72(21), 1994, pp. 3417-3420
FAR-INFRARED PHOTOCONDUCTIVITY OF (TMTSF)2CLO4 IN MAGNETIC-FIELD
Authors: LEFEBVRE J BEERENS J BOURBONNAIS C CARON LG LENOIR C BATAIL P
Citation: J. Lefebvre et al., FAR-INFRARED PHOTOCONDUCTIVITY OF (TMTSF)2CLO4 IN MAGNETIC-FIELD, Synthetic metals, 56(1), 1993, pp. 1827-1831
DEPENDENCE OF CONDUCTION-BAND EFFECTIVE-MASS ON QUATERNARY ALLOY COMPOSITION OF (IN0.52AL0.48AS)Z(IN0.53GA0.47AS)1-Z LATTICE-MATCHED TO INP
Authors: CURY LA BEERENS J PRASEUTH JP
Citation: La. Cury et al., DEPENDENCE OF CONDUCTION-BAND EFFECTIVE-MASS ON QUATERNARY ALLOY COMPOSITION OF (IN0.52AL0.48AS)Z(IN0.53GA0.47AS)1-Z LATTICE-MATCHED TO INP, Applied physics letters, 63(13), 1993, pp. 1804-1806
GAMMA-CHI INTERVALLEY TRANSFER IN SINGLE ALAS BARRIERS UNDER HYDROSTATIC-PRESSURE
Authors: CARBONNEAU Y BEERENS J CURY LA LIU HC BUCHANAN M
Citation: Y. Carbonneau et al., GAMMA-CHI INTERVALLEY TRANSFER IN SINGLE ALAS BARRIERS UNDER HYDROSTATIC-PRESSURE, Applied physics letters, 62(16), 1993, pp. 1955-1957
EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE PREPARED BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR DEPOSITION AT LOW-TEMPERATURES
Authors: AKTIK C BEERENS J BLAIN S BSIESY A
Citation: C. Aktik et al., EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE PREPARED BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR DEPOSITION AT LOW-TEMPERATURES, Canadian journal of physics, 70(10-11), 1992, pp. 893-897
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