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Results: 1-3 |
Results: 3
PARASITIC RESISTANCE CONSIDERATIONS OF USING ELEVATED SOURCE DRAIN TECHNOLOGY FOR DEEP-SUBMICRON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS/
Authors: SUN J BARTHOLOMEW RF BELLUR K SRIVASTAVA A OSBURN CM MASNARI NA WESTHOFF R
Citation: J. Sun et al., PARASITIC RESISTANCE CONSIDERATIONS OF USING ELEVATED SOURCE DRAIN TECHNOLOGY FOR DEEP-SUBMICRON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS/, Journal of the Electrochemical Society, 145(6), 1998, pp. 2131-2137
THE EFFECT OF THE ELEVATED SOURCE DRAIN DOPING PROFILE ON PERFORMANCEAND RELIABILITY OF DEEP-SUBMICRON MOSFETS
Authors: SUN JJ BARTHOLOMEW RF BELLUR K SRIVASTAVA A OSBURN CM MASNARI NA
Citation: Jj. Sun et al., THE EFFECT OF THE ELEVATED SOURCE DRAIN DOPING PROFILE ON PERFORMANCEAND RELIABILITY OF DEEP-SUBMICRON MOSFETS, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1491-1498
A COMPARATIVE-STUDY OF N(+) P JUNCTION FORMATION FOR DEEP-SUBMICRON ELEVATED SOURCE/DRAIN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS/
Authors: SUN J BARTHOLOMEW RF BELLUR K SRIVASTAVA A OSBURN CM MASNARI NA WESTHOFF R
Citation: J. Sun et al., A COMPARATIVE-STUDY OF N(+) P JUNCTION FORMATION FOR DEEP-SUBMICRON ELEVATED SOURCE/DRAIN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS/, Journal of the Electrochemical Society, 144(10), 1997, pp. 3659-3664
Risultati: 1-3 |