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Results:
1-8
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Results: 8
Authors:
DALLABETTA GF
PIGNATEL GU
VERZELLESI G
BELLUTTI P
BOSCARDIN M
FERRARIO L
ZORZI N
MAGLIONE A
Citation: Gf. Dallabetta et al., DESIGN AND OPTIMIZATION OF AN NPN SILICON BIPOLAR PHOTOTRANSISTOR FOROPTICAL POSITION ENCODERS, Microelectronics, 29(1-2), 1998, pp. 49-58
Authors:
BELLUTTI P
ZORZI N
Citation: P. Bellutti et N. Zorzi, IMPACT OF HIGH-TEMPERATURE DRY LOCAL OXIDATION ON GATE OXIDE QUALITY, Journal of the Electrochemical Society, 145(7), 1998, pp. 2595-2601
Authors:
CHEN L
KANG CS
ORALKAN O
DUMIN DJ
BROWN GA
BELLUTTI P
Citation: L. Chen et al., THE SEARCH FOR CATHODE AND ANODE TRAPS IN HIGH-VOLTAGE STRESSED SILICON-OXIDES, Journal of the Electrochemical Society, 145(4), 1998, pp. 1292-1296
Authors:
PAVESI L
GUARDINI R
BELLUTTI P
Citation: L. Pavesi et al., POROUS SILICON N-P LIGHT-EMITTING DIODE, Thin solid films, 297(1-2), 1997, pp. 272-276
Authors:
PACCAGNELLA A
CESCHIA M
VERZELLESI G
DALLABETTA GF
BELLUTTI P
FUOCHI PG
SONCINI G
Citation: A. Paccagnella et al., FORWARD AND REVERSE CHARACTERISTICS OF IRRADIATED MOSFETS, IEEE transactions on nuclear science, 43(3), 1996, pp. 797-804
Authors:
BELLUTTI P
ZEN M
Citation: P. Bellutti et M. Zen, OXIDE-GROWTH EFFECTS IN MICRON END SUBMICRON FIELD REGIONS - A COMPARISON BETWEEN WET AND DRY OXIDATION, Journal of the Electrochemical Society, 143(9), 1996, pp. 2953-2957
Authors:
BELLUTTI P
BOSCARDIN M
SONCINI G
ZEN M
ZORZI N
Citation: P. Bellutti et al., DW-LOCOS - A CONVENIENT VLSI ISOLATION TECHNIQUE, Semiconductor science and technology, 10(12), 1995, pp. 1700-1705
Authors:
BELLUTTI P
LUI A
Citation: P. Bellutti et A. Lui, INSIGHT INTO GATE OXIDE THINNING, Journal of the Electrochemical Society, 141(3), 1994, pp. 750-754
Risultati:
1-8
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