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Results: 1-25 |

Results: 25

HOLE-BURNING SPECTROSCOPY OF POROUS SILICON

Authors: KOVALEV D HECKLER H AVERBOUKH B BENCHORIN M SCHWARTZKOPFF M KOCH F

Citation: D. Kovalev et al., HOLE-BURNING SPECTROSCOPY OF POROUS SILICON, Physical review. B, Condensed matter, 57(7), 1998, pp. 3741-3744

BREAKDOWN OF THE K-CONSERVATION RULE IN SI NANOCRYSTALS

Authors: KOVALEV D HECKLER H BENCHORIN M POLISSKI G SCHWARTZKOPFF M KOCH F

Citation: D. Kovalev et al., BREAKDOWN OF THE K-CONSERVATION RULE IN SI NANOCRYSTALS, Physical review letters, 81(13), 1998, pp. 2803-2806

DISTANCE MEASUREMENTS USING A NOISY WHITE-LIGHT INTERFEROMETER

Authors: BENCHORIN M CHUARTZMAN S PRIOR Y

Citation: M. Benchorin et al., DISTANCE MEASUREMENTS USING A NOISY WHITE-LIGHT INTERFEROMETER, Applied physics letters, 73(5), 1998, pp. 581-583

NONLINEAR-OPTICAL EFFECTS IN POROUS SILICON - PHOTOLUMINESCENCE SATURATION AND OPTICALLY INDUCED POLARIZATION ANISOTROPY

Authors: EFROS AL ROSEN M AVERBOUKH B KOVALEV D BENCHORIN M KOCH F

Citation: Al. Efros et al., NONLINEAR-OPTICAL EFFECTS IN POROUS SILICON - PHOTOLUMINESCENCE SATURATION AND OPTICALLY INDUCED POLARIZATION ANISOTROPY, Physical review. B, Condensed matter, 56(7), 1997, pp. 3875-3884

SYMMETRY OF THE ELECTRONIC STATES OF SI NANOCRYSTALS - AN EXPERIMENTAL-STUDY

Authors: KOVALEV D BENCHORIN M DIENER J AVERBOUKH B POLISSKI G KOCH F

Citation: D. Kovalev et al., SYMMETRY OF THE ELECTRONIC STATES OF SI NANOCRYSTALS - AN EXPERIMENTAL-STUDY, Physical review letters, 79(1), 1997, pp. 119-122

EXCITON FINE-STRUCTURE IN UNDOPED GAN EPITAXIAL-FILMS

Authors: VOLM D OETTINGER K STREIBL T KOVALEV D BENCHORIN M DIENER J MEYER BK MAJEWSKI J ECKEY L HOFFMANN A AMANO H AKASAKI I HIRAMATSU K DETCHPROHM T

Citation: D. Volm et al., EXCITON FINE-STRUCTURE IN UNDOPED GAN EPITAXIAL-FILMS, Physical review. B, Condensed matter, 53(24), 1996, pp. 16543-16550

EXCITATION OF THE POROUS SILICON PHOTOLUMINESCENCE BY A MULTIPHOTON VIBRONIC PROCESS

Authors: DIENER J BENCHORIN M KOVALEV DI GANICHEV SD KOCH F

Citation: J. Diener et al., EXCITATION OF THE POROUS SILICON PHOTOLUMINESCENCE BY A MULTIPHOTON VIBRONIC PROCESS, Thin solid films, 276(1-2), 1996, pp. 116-119

POLARIZATION OF POROUS SILICON PHOTOLUMINESCENCE - ALIGNMENT AND BUILT-IN ANISOTROPY

Authors: KOVALEV D BENCHORIN M DIENER J KOCH F KUX A EFROS AL ROSEN M GIPPIUS NA TIKHODEEV SG

Citation: D. Kovalev et al., POLARIZATION OF POROUS SILICON PHOTOLUMINESCENCE - ALIGNMENT AND BUILT-IN ANISOTROPY, Thin solid films, 276(1-2), 1996, pp. 120-122

RED, GREEN AND BLUE LUMINESCENCE IN POROUS SILICON - A STUDY OF EXCITATION-SPECTRA

Authors: KUX A BENCHORIN M

Citation: A. Kux et M. Benchorin, RED, GREEN AND BLUE LUMINESCENCE IN POROUS SILICON - A STUDY OF EXCITATION-SPECTRA, Thin solid films, 276(1-2), 1996, pp. 272-275

INFLUENCE OF QUANTUM CONFINEMENT ON THE CRITICAL-POINTS OF THE BAND-STRUCTURE OF SI

Authors: BENCHORIN M AVERBOUKH B KOVALEV D POLISSKI G KOCH F

Citation: M. Benchorin et al., INFLUENCE OF QUANTUM CONFINEMENT ON THE CRITICAL-POINTS OF THE BAND-STRUCTURE OF SI, Physical review letters, 77(4), 1996, pp. 763-766

OPTICALLY INDUCED POLARIZATION ANISOTROPY IN POROUS SI

Authors: KOVALEV D AVERBOUKH B BENCHORIN M KOCH F EFROS AL ROSEN M

Citation: D. Kovalev et al., OPTICALLY INDUCED POLARIZATION ANISOTROPY IN POROUS SI, Physical review letters, 77(10), 1996, pp. 2089-2092

POLARIZATION PHENOMENA IN THE OPTICAL-PROPERTIES OF POROUS SILICON

Authors: KOCH F KOVALEV D AVERBOUKH B POLISSKI G BENCHORIN M

Citation: F. Koch et al., POLARIZATION PHENOMENA IN THE OPTICAL-PROPERTIES OF POROUS SILICON, Journal of luminescence, 70, 1996, pp. 320-332

THE TEMPERATURE-DEPENDENCE OF THE ABSORPTION-COEFFICIENT OF POROUS SILICON

Authors: KOVALEV D POLISSKI G BENCHORIN M DIENER J KOCH F

Citation: D. Kovalev et al., THE TEMPERATURE-DEPENDENCE OF THE ABSORPTION-COEFFICIENT OF POROUS SILICON, Journal of applied physics, 80(10), 1996, pp. 5978-5983

LIGHT FROM POROUS SILICON BY MULTIPHOTON VIBRONIC EXCITATION

Authors: DIENER J BENCHORIN M KOVALEV DI GANICHEV SD KOCH F

Citation: J. Diener et al., LIGHT FROM POROUS SILICON BY MULTIPHOTON VIBRONIC EXCITATION, Physical review. B, Condensed matter, 52(12), 1995, pp. 8617-8620

HOPPING TRANSPORT ON A FRACTAL - AC CONDUCTIVITY OF POROUS SILICON

Authors: BENCHORIN M MOLLER F KOCH F SCHIRMACHER W EBERHARD M

Citation: M. Benchorin et al., HOPPING TRANSPORT ON A FRACTAL - AC CONDUCTIVITY OF POROUS SILICON, Physical review. B, Condensed matter, 51(4), 1995, pp. 2199-2213

POSTTREATMENT EFFECTS ON ELECTRICAL-CONDUCTION IN POROUS SILICON

Authors: MOLLER F BENCHORIN M KOCH F

Citation: F. Moller et al., POSTTREATMENT EFFECTS ON ELECTRICAL-CONDUCTION IN POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 16-19

PHOTOCARRIER GRATING TECHNIQUE IN MESOPOROUS SILICON

Authors: SCHWARZ R WANG F BENCHORIN M GREBNER S NIKOLOV A KOCH F

Citation: R. Schwarz et al., PHOTOCARRIER GRATING TECHNIQUE IN MESOPOROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 23-26

BAND ALIGNMENT AND CARRIER INJECTION AT THE POROUS-SILICON CRYSTALLINE-SILICON INTERFACE

Authors: BENCHORIN M MOLLER F KOCH F

Citation: M. Benchorin et al., BAND ALIGNMENT AND CARRIER INJECTION AT THE POROUS-SILICON CRYSTALLINE-SILICON INTERFACE, Journal of applied physics, 77(9), 1995, pp. 4482-4488

POROUS SI ANISOTROPY FROM PHOTOLUMINESCENCE POLARIZATION

Authors: KOVALEV D BENCHORIN M DIENER J KOCH F EFROS AL ROSEN M GIPPIUS NA TIKHODEEV SG

Citation: D. Kovalev et al., POROUS SI ANISOTROPY FROM PHOTOLUMINESCENCE POLARIZATION, Applied physics letters, 67(11), 1995, pp. 1585-1587

GAS-SENSING PROPERTIES OF POROUS SILICON

Authors: SCHECHTER I BENCHORIN M KUX A

Citation: I. Schechter et al., GAS-SENSING PROPERTIES OF POROUS SILICON, Analytical chemistry, 67(20), 1995, pp. 3727-3732

NONLINEAR ELECTRICAL-TRANSPORT IN POROUS SILICON

Authors: BENCHORIN M MOLLER F KOCH F

Citation: M. Benchorin et al., NONLINEAR ELECTRICAL-TRANSPORT IN POROUS SILICON, Physical review. B, Condensed matter, 49(4), 1994, pp. 2981-2984

EVIDENCE FOR GRAIN-BOUNDARY HOPPING TRANSPORT IN POLYCRYSTALLINE DIAMOND FILMS

Authors: FIEGL B KUHNERT R BENCHORIN M KOCH F

Citation: B. Fiegl et al., EVIDENCE FOR GRAIN-BOUNDARY HOPPING TRANSPORT IN POLYCRYSTALLINE DIAMOND FILMS, Applied physics letters, 65(3), 1994, pp. 371-373

ADSORBATE EFFECTS ON PHOTOLUMINESCENCE AND ELECTRICAL-CONDUCTIVITY OFPOROUS SILICON

Authors: BENCHORIN M KUX A SCHECHTER I

Citation: M. Benchorin et al., ADSORBATE EFFECTS ON PHOTOLUMINESCENCE AND ELECTRICAL-CONDUCTIVITY OFPOROUS SILICON, Applied physics letters, 64(4), 1994, pp. 481-483

NONEQUILIBRIUM TRANSPORT AND SLOW RELAXATION IN HOPPING CONDUCTIVITY

Authors: BENCHORIN M OVADYAHU Z POLLAK M

Citation: M. Benchorin et al., NONEQUILIBRIUM TRANSPORT AND SLOW RELAXATION IN HOPPING CONDUCTIVITY, Physical review. B, Condensed matter, 48(20), 1993, pp. 15025-15034

AC CONDUCTIVITY IN POROUS SILICON

Authors: BENCHORIN M MOLLER F KOCH F

Citation: M. Benchorin et al., AC CONDUCTIVITY IN POROUS SILICON, Journal of luminescence, 57(1-6), 1993, pp. 159-162

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