AAAAAA

   
Results: 1-3 |
Results: 3
A HEAVY-ION IMPLANTED POCKET 0.10-MU-M N-TYPE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH HYBRID LITHOGRAPHY (ELECTRON-BEAM DEEPULTRAVIOLET) AND SPECIFIC GATE PASSIVATION PROCESS/
Authors: BENISTANT F TEDESCO S GUEGAN G MARTIN F HEITZMANN M DALZOTTO B
Citation: F. Benistant et al., A HEAVY-ION IMPLANTED POCKET 0.10-MU-M N-TYPE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH HYBRID LITHOGRAPHY (ELECTRON-BEAM DEEPULTRAVIOLET) AND SPECIFIC GATE PASSIVATION PROCESS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4051-4054
A 0.10 MU-M NMOSFET, MADE BY HYBRID LITHOGRAPHY (E-BEAM DUV), WITH INDIUM POCKET AND SPECIFIC GATE REOXIDATION PROCESS/
Authors: BENISTANT F TEDESCO S GUEGAN G MARTIN F HEITZMANN M DALZOTTO B
Citation: F. Benistant et al., A 0.10 MU-M NMOSFET, MADE BY HYBRID LITHOGRAPHY (E-BEAM DUV), WITH INDIUM POCKET AND SPECIFIC GATE REOXIDATION PROCESS/, Microelectronic engineering, 30(1-4), 1996, pp. 459-462
COMPARISON OF ULTRA-THIN GATE DIELECTRICS FOR 0.1 MU-M MOS DEVICES
Authors: BENISTANT F MONDON F MARTIN F GUEGAN G
Citation: F. Benistant et al., COMPARISON OF ULTRA-THIN GATE DIELECTRICS FOR 0.1 MU-M MOS DEVICES, Microelectronic engineering, 28(1-4), 1995, pp. 105-108
Risultati: 1-3 |