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Results: 1-6 |
Results: 6

Authors: BENSAHEL D CAMPIDELLI Y HERNANDEZ C MARTIN F SAGNES I MEYER DJ
Citation: D. Bensahel et al., SINGLE-WAFER PROCESSING OF IN SITU-DOPED POLYCRYSTALLINE SI AND SI1-XGEX, Solid state technology, 41(3), 1998, pp. 5

Authors: HALIMAOUI A CAMPIDELLI Y LARRE A BENSAHEL D
Citation: A. Halimaoui et al., THERMALLY-INDUCED MODIFICATIONS IN THE POROUS SILICON PROPERTIES, Physica status solidi. b, Basic research, 190(1), 1995, pp. 35-40

Authors: HALIMAOUI A CAMPIDELLI Y BADOZ PA BENSAHEL D
Citation: A. Halimaoui et al., COVERING AND FILLING OF POROUS SILICON PORES WITH GE AND SI USING CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 78(5), 1995, pp. 3428-3430

Authors: BOUCAUD P GLOWACKI F CAMPIDELLI Y LARRE A FERRIEU F BENSAHEL D
Citation: P. Boucaud et al., GROWTH AND IN-SITU ELLIPSOMETRIC ANALYSIS OF SI1-XGEX ALLOYS DEPOSITED BY CHEMICAL BEAM EPITAXY, Journal of electronic materials, 23(6), 1994, pp. 565-568

Authors: BOUCAUD P GLOWACKI F FERRIEU F LARRE A PERIO A BENSAHEL D
Citation: P. Boucaud et al., IN-SITU ELLIPSOMETRIC CONTROL OF SI1-XGEX SI HETEROSTRUCTURES GROWN BY CHEMICAL BEAM EPITAXY/, Thin solid films, 248(1), 1994, pp. 1-5

Authors: LARRE A HALIMAOUI A GLOWACKI F FERRIEU F CAMPIDELLI Y BENSAHEL D
Citation: A. Larre et al., IN-SITU SPECTROSCOPIC ELLIPSOMETRY OF POROUS SILICON LAYERS ANNEALED UNDER ULTRAHIGH-VACUUM, Applied physics letters, 65(12), 1994, pp. 1566-1568
Risultati: 1-6 |