AAAAAA

   
Results: 1-13 |
Results: 13
ELECTRICAL-PROPERTIES OF N2O NH3 PLASMA GROWN OXYNITRIDE ON STRAINED-SI/
Authors: BERA LK RAY SK MUKHOPADHYAY M NAYAK DK USAMI N SHIRAKI Y MAITI CK
Citation: Lk. Bera et al., ELECTRICAL-PROPERTIES OF N2O NH3 PLASMA GROWN OXYNITRIDE ON STRAINED-SI/, IEEE electron device letters, 19(8), 1998, pp. 273-275
ELECTRICAL-PROPERTIES OF THIN POLYOXIDES GROWN AT A LOW-TEMPERATURE USING MICROWAVE OXYGEN PLASMA
Authors: SAHA C BERA LK RAY SK MAITI CK LAHIRI SK
Citation: C. Saha et al., ELECTRICAL-PROPERTIES OF THIN POLYOXIDES GROWN AT A LOW-TEMPERATURE USING MICROWAVE OXYGEN PLASMA, Semiconductor science and technology, 13(6), 1998, pp. 599-602
MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED SI1-XGEX LAYERS ON GRADEDSI1-YGEY FOR PT SILICIDE SCHOTTKY DIODES
Authors: DENTEL D KUBLER L BISCHOFF JL CHATTOPADHYAY S BERA LK RAY SK MAITI CK
Citation: D. Dentel et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED SI1-XGEX LAYERS ON GRADEDSI1-YGEY FOR PT SILICIDE SCHOTTKY DIODES, Semiconductor science and technology, 13(2), 1998, pp. 214-219
STRAINED-SI HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
Authors: MAITI CK BERA LK CHATTOPADHYAY S
Citation: Ck. Maiti et al., STRAINED-SI HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS, Semiconductor science and technology (Print), 13(11), 1998, pp. 1225-1246
ELECTRON-CYCLOTRON-RESONANCE (ECR) PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON DIOXIDE ON STRAINED-SIGE FILMS USING TETRAETHYLORTHOSILICATE
Authors: BERA LK RAY SK BANERJEE HD MAITI CK
Citation: Lk. Bera et al., ELECTRON-CYCLOTRON-RESONANCE (ECR) PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON DIOXIDE ON STRAINED-SIGE FILMS USING TETRAETHYLORTHOSILICATE, Bulletin of Materials Science, 21(4), 1998, pp. 283-286
MOS CAPACITOR CHARACTERISTICS OF PLASMA OXIDE ON PARTIALLY STRAINED SIGEC FILMS
Authors: RAY SK BERA LK MAITI CK JOHN S BANERJEE SK
Citation: Sk. Ray et al., MOS CAPACITOR CHARACTERISTICS OF PLASMA OXIDE ON PARTIALLY STRAINED SIGEC FILMS, Thin solid films, 332(1-2), 1998, pp. 375-378
MICROWAVE PLASMA NITRIDATION OF SILICON DIOXIDE ON STRAINED SI
Authors: BERA LK BANERJEE HD RAY SK MUKHOPADHYAY M MAITI CK
Citation: Lk. Bera et al., MICROWAVE PLASMA NITRIDATION OF SILICON DIOXIDE ON STRAINED SI, Applied physics letters, 73(11), 1998, pp. 1559-1561
ELECTRICAL CHARACTERISTICS OF PLASMA OXIDIZED SI1-X-YYGEXCY METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: RAY SK BERA LK MAITI CK JOHN S BANERJEE SK
Citation: Sk. Ray et al., ELECTRICAL CHARACTERISTICS OF PLASMA OXIDIZED SI1-X-YYGEXCY METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Applied physics letters, 72(10), 1998, pp. 1250-1252
HOLE MOBILITY ENHANCEMENT IN STRAINED-SI P-MOSFETS UNDER HIGH VERTICAL FIELD
Authors: MAITI CK BERA LK DEY SS NAYAK DK CHAKRABARTI NB
Citation: Ck. Maiti et al., HOLE MOBILITY ENHANCEMENT IN STRAINED-SI P-MOSFETS UNDER HIGH VERTICAL FIELD, Solid-state electronics, 41(12), 1997, pp. 1863-1869
SCHOTTKY DIODE CHARACTERISTICS OF TI ON STRAINED-SI
Authors: CHATTOPADHYAY S BERA LK MAHARATNA K CHAKRABARTI S DHAR S RAY SK MAITI CK
Citation: S. Chattopadhyay et al., SCHOTTKY DIODE CHARACTERISTICS OF TI ON STRAINED-SI, Solid-state electronics, 41(12), 1997, pp. 1891-1893
PT P-STRAINED-SI SCHOTTKY DIODE CHARACTERISTICS AT LOW-TEMPERATURE/
Authors: CHATTOPADHYAY S BERA LK RAY SK MAITI CK
Citation: S. Chattopadhyay et al., PT P-STRAINED-SI SCHOTTKY DIODE CHARACTERISTICS AT LOW-TEMPERATURE/, Applied physics letters, 71(7), 1997, pp. 942-944
OXIDATION OF STRAINED SI IN A MICROWAVE ELECTRON-CYCLOTRON-RESONANCE PLASMA
Authors: BERA LK MUKHOPADHYAY M RAY SK NAYAK DK USAMI N SHIRAKI Y MAITI CK
Citation: Lk. Bera et al., OXIDATION OF STRAINED SI IN A MICROWAVE ELECTRON-CYCLOTRON-RESONANCE PLASMA, Applied physics letters, 70(2), 1997, pp. 217-219
ELECTRICAL-PROPERTIES OF OXIDES GROWN ON STRAINED SI USING MICROWAVE N2O PLASMA
Authors: BERA LK RAY SK NAYAK DK USAMI N SHIRAKI Y MAITI CK
Citation: Lk. Bera et al., ELECTRICAL-PROPERTIES OF OXIDES GROWN ON STRAINED SI USING MICROWAVE N2O PLASMA, Applied physics letters, 70(1), 1997, pp. 66-68
Risultati: 1-13 |