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Results:
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Results: 10
Authors:
BERGAMASCHI C
CAMPOS RR
SCHOR N
LOPES OU
Citation: C. Bergamaschi et al., IMPORTANCE OF ROSTRAL VENTROLATERAL MEDULLA IN RATS WITH GOLDBLATT HYPERTENSION, Fundamental and clinical pharmacology, 11, 1997, pp. 92-93
Authors:
DISKUS CG
BERGAMASCHI C
SCHEFER M
PATRICK W
KLEPSER BUH
BACHTOLD W
Citation: Cg. Diskus et al., APPROACH FOR DEVELOPING A LARGE-SIGNAL MODEL OF A 150-GHZ HEMT, International journal of microwave and millimeter-wave computer-aided engineering, 6(4), 1996, pp. 234-242
Authors:
BERGAMASCHI C
PATRICK W
BAECHTOLD W
Citation: C. Bergamaschi et al., DETERMINATION OF THE RF-NOISE SOURCE PARAMETERS IN ALLNAS GAINAS-HEMTHETEROSTRUCTURES BASED ON MEASURED NOISE TEMPERATURE-DEPENDENCE AGAINST ELECTRIC-FIELD/, IEE proceedings. Circuits, devices and systems, 142(5), 1995, pp. 339-344
Authors:
BERGAMASCHI C
CAMPOS RR
SCHOR N
LOPES OU
Citation: C. Bergamaschi et al., ROLE OF THE ROSTRAL VENTROLATERAL MEDULLA IN MAINTENANCE OF BLOOD-PRESSURE IN RATS WITH GOLDBLATT HYPERTENSION, Hypertension, 26(6), 1995, pp. 1117-1120
Authors:
BERGAMASCHI C
CAMPOS RR
SCHOR N
LOPES OU
Citation: C. Bergamaschi et al., ROLE OF ROSTRAL VENTROLATERAL MEDULLA IN MAINTENANCE OF BLOOD-PRESSURE IN RATS WITH GOLDBLATT (G(II)) HYPERTENSION, Hypertension, 25(6), 1995, pp. 1422-1422
Authors:
KLEPSER BUH
BERGAMASCHI C
SCHEFER M
DISKUS CG
PATRICK W
BACHTOLD W
Citation: Buh. Klepser et al., ANALYTICAL BIAS DEPENDENT NOISE MODEL FOR INP HEMTS, I.E.E.E. transactions on electron devices, 42(11), 1995, pp. 1882-1889
Authors:
KLEPSER BUH
SPICHER J
BECK M
BERGAMASCHI C
PATRICK W
BACHTOLD W
Citation: Buh. Klepser et al., HIGH-SPEED, MONOLITHICALLY INTEGRATED PIN-HEMT PHOTORECEIVER FABRICATED ON INP WITH 18GHZ BANDWIDTH, Electronics Letters, 31(21), 1995, pp. 1831-1833
Authors:
SOUZA ERM
BOIM MA
BERGAMASCHI C
AJZEN H
PESTANA JO
VERSOLATO C
SCHOR N
Citation: Erm. Souza et al., ACUTE AND CHRONIC EFFECTS OF FK-506 (FX) ON GLOMERULAR HEMODYNAMICS, Kidney international, 46(6), 1994, pp. 1741-1742
Authors:
KLEPSER BUH
BERGAMASCHI C
PATRICK W
Citation: Buh. Klepser et al., INFLUENCE OF CAP-LAYER DOPING ON OHMIC CONTACTS FOR INP BASED HEMT STRUCTURES, Solid-state electronics, 37(12), 1994, pp. 1905-1906
Authors:
PATRICK W
BERGAMASCHI C
MEIER H
Citation: W. Patrick et al., INTEGRATED-CIRCUITS ON III-V SEMICONDUCTORS - A LOW-COST, RELIABLE TECHNOLOGY FOR UNIVERSITY ENVIRONMENTS, Microelectronic engineering, 21(1-4), 1993, pp. 475-478
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