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Results: 1-6 |
Results: 6

Authors: ALQUIER D VANHAAREN B BERGAUD C PLANA R GRAFFEUIL J MARTINEZ A
Citation: D. Alquier et al., INFLUENCE OF DEPTH POSITION OF END-OF-RANGE DEFECTS ON CURRENT-VOLTAGE AND NOISE CHARACTERISTICS OF SHALLOW (P(+) N) JUNCTIONS/, JPN J A P 1, 36(4A), 1997, pp. 1999-2003

Authors: BONAFOS C CLAVERIE A ALQUIER D BERGAUD C MARTINEZ A LAANAB L MATHIOT D
Citation: C. Bonafos et al., THE EFFECT OF THE BORON DOPING LEVEL ON THE THERMAL-BEHAVIOR OF END-OF-RANGE DEFECTS IN SILICON, Applied physics letters, 71(3), 1997, pp. 365-367

Authors: CLAVERIE A LAANAB L BONAFOS C BERGAUD C MARTINEZ A MATHIOT D
Citation: A. Claverie et al., ON THE RELATION BETWEEN DOPANT ANOMALOUS DIFFUSION IN SI AND END-OF-RANGE DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 202-209

Authors: LAANAB L BERGAUD C BONAFOS C MARTINEZ A CLAVERIE A
Citation: L. Laanab et al., VARIATION OF END-OF-RANGE DENSITY WITH ION-BEAM ENERGY AND THE PREDICTIONS OF THE EXCESS INTERSTITIALS MODEL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 236-240

Authors: BONAFOS C MARTINEZ A FAYE MM BERGAUD C MATHIOT D CLAVERIE A
Citation: C. Bonafos et al., TRANSIENT ENHANCED DIFFUSION OF DOPANT IN PREAMORPHISED SI - THE ROLEOF EOR DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 222-226

Authors: DEMAUDUIT B LAANAB L BERGAUD C FAYE MM MARTINEZ A CLAVERIE A
Citation: B. Demauduit et al., IDENTIFICATION OF EOR DEFECTS DUE TO THE REGROWTH OF AMORPHOUS LAYERSCREATED BY ION-BOMBARDMENT, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 190-194
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