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Results: 1-14 |
Results: 14
PERIODIC-SOLUTIONS FOR NONLINEAR EQUATIONS OF STRUCTURED POPULATIONS
Authors: BERTONI S
Citation: S. Bertoni, PERIODIC-SOLUTIONS FOR NONLINEAR EQUATIONS OF STRUCTURED POPULATIONS, Journal of mathematical analysis and applications, 220(1), 1998, pp. 250-267
IN-VITRO CHARACTERIZATION OF POTENCY, AFFINITY AND SELECTIVITY OF H-3ANTAGONISTS - FROM THIOPERAMIDE TO THIOPERAMIDE UNRELATED IMIDAZOLE DERIVATIVES
Authors: BAROCELLI E BALLABENI V CARETTA A BERTONI S BORDI F RIVARA S SILVA C MOR M IMPICCIATORE M
Citation: E. Barocelli et al., IN-VITRO CHARACTERIZATION OF POTENCY, AFFINITY AND SELECTIVITY OF H-3ANTAGONISTS - FROM THIOPERAMIDE TO THIOPERAMIDE UNRELATED IMIDAZOLE DERIVATIVES, Il Farmaco, 52(6-7), 1997, pp. 463-469
ETHEROGENEOUS PRECIPITATION IN OXYGEN-IMPLANTED SILICON
Authors: CEROFOLINI GF BERTONI S MEDA L SPAGGIARI C
Citation: Gf. Cerofolini et al., ETHEROGENEOUS PRECIPITATION IN OXYGEN-IMPLANTED SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 26-29
CHARACTERIZATION OF SOI-SIMOX STRUCTURES USING BRILLOUIN LIGHT-SCATTERING
Authors: GHISLOTTI G GAGLIARDI A BOTTANI CE BERTONI S CEROFOLINI GF MEDA L
Citation: G. Ghislotti et al., CHARACTERIZATION OF SOI-SIMOX STRUCTURES USING BRILLOUIN LIGHT-SCATTERING, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 129-132
THE FLUENCE SPECTRUM ALLOWING THE FORMATION OF A CONNECTED BURIED SIO2 LAYER IN SILICON BY OXYGEN IMPLANTATION
Authors: CEROFOLINI GF BERTONI S MEDA L SPAGGIARI C
Citation: Gf. Cerofolini et al., THE FLUENCE SPECTRUM ALLOWING THE FORMATION OF A CONNECTED BURIED SIO2 LAYER IN SILICON BY OXYGEN IMPLANTATION, Semiconductor science and technology, 11(3), 1996, pp. 398-409
CHARACTERIZATION OF SILICON-IMPLANTED SIO2 LAYERS USING POSITRON-ANNIHILATION SPECTROSCOPY
Authors: GHISLOTTI G NIELSEN B ASOKAKUMAR P LYNN KG SZELES C BOTTANI CE BERTONI S CEROFOLINI GF MEDA L
Citation: G. Ghislotti et al., CHARACTERIZATION OF SILICON-IMPLANTED SIO2 LAYERS USING POSITRON-ANNIHILATION SPECTROSCOPY, Thin solid films, 276(1-2), 1996, pp. 310-313
ROOM-TEMPERATURE VISIBLE LUMINESCENCE FROM SILICON NANOCRYSTALS IN SILICON IMPLANTED SIO2 LAYERS
Authors: MUTTI P GHISLOTTI G BERTONI S BONOLDI L CEROFOLINI GF MEDA L GRILLI E GUZZI M
Citation: P. Mutti et al., ROOM-TEMPERATURE VISIBLE LUMINESCENCE FROM SILICON NANOCRYSTALS IN SILICON IMPLANTED SIO2 LAYERS, Applied physics letters, 66(7), 1995, pp. 851-853
SILICON ON THIN INSULATOR - PREDICTION OF THE OXYGEN FLUENCE REQUIREDFOR THE FORMATION OF A CONTINUOUS BURIED OXIDE
Authors: CEROFOLINI GF BERTONI S MEDA L SPAGGIARI C
Citation: Gf. Cerofolini et al., SILICON ON THIN INSULATOR - PREDICTION OF THE OXYGEN FLUENCE REQUIREDFOR THE FORMATION OF A CONTINUOUS BURIED OXIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 22(2-3), 1994, pp. 172-180
FORMATION AND STABILITY OF CONTINUOUS BURIED SIO2 LAYERS IN SIMOX
Authors: CEROFOLINI GF BERTONI S MEDA L SPAGGIARI C
Citation: Gf. Cerofolini et al., FORMATION AND STABILITY OF CONTINUOUS BURIED SIO2 LAYERS IN SIMOX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 234-237
ELECTRICAL AND STRUCTURAL CHARACTERISTICS OF THIN BURIED OXIDES
Authors: MEDA L BERTONI S CEROFOLINI GF GASSEL H
Citation: L. Meda et al., ELECTRICAL AND STRUCTURAL CHARACTERISTICS OF THIN BURIED OXIDES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 270-274
THIN BURIED OXIDE IN OXYGEN-IMPLANTED SILICON
Authors: SPAGGIARI C BERTONI S CEROFOLINI GF FUMAGALLI P MEDA L
Citation: C. Spaggiari et al., THIN BURIED OXIDE IN OXYGEN-IMPLANTED SILICON, Ceramics international, 19(6), 1993, pp. 399-405
THIN BURIED OXIDE IN IMPLANTED SILICON
Authors: MEDA L BERTONI S CEROFOLINI GF SPAGGIARI C
Citation: L. Meda et al., THIN BURIED OXIDE IN IMPLANTED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 813-817
GIANT RADIATION-DAMAGE PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONSONTO SILICON SINGLE-CRYSTAL
Authors: CEROFOLINI GF BERTONI S MEDA L BALBONI R CORNI F FRABBONI S OTTAVIANI G TONINI R PARA AF
Citation: Gf. Cerofolini et al., GIANT RADIATION-DAMAGE PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONSONTO SILICON SINGLE-CRYSTAL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 132-136
SIO2 PRECIPITATION IN HIGHLY SUPERSATURATED OXYGEN-IMPLANTED SINGLE-CRYSTAL SILICON
Authors: CEROFOLINI GF BERTONI S FUMAGALLI P MEDA L SPAGGIARI C
Citation: Gf. Cerofolini et al., SIO2 PRECIPITATION IN HIGHLY SUPERSATURATED OXYGEN-IMPLANTED SINGLE-CRYSTAL SILICON, Physical review. B, Condensed matter, 47(16), 1993, pp. 10174-10185
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