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Results:
1-17
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Results: 17
Authors:
LEVY M
AMIR N
KHANIN E
MURANEVICH A
NEMIROVSKY Y
BESERMAN R
Citation: M. Levy et al., CHARACTERIZATION OF CDTE SUBSTRATES AND MOCVD CD1-XZNXTE EPILAYERS BYRAMAN, PHOTOLUMINESCENCE AND X-RAY-DIFFRACTION TECHNIQUES, Journal of crystal growth, 187(3-4), 1998, pp. 367-372
Authors:
MAGIDSON V
REGELMAN DV
BESERMAN R
DETTMER K
Citation: V. Magidson et al., EVIDENCE OF SI PRESENCE IN SELF-ASSEMBLED GE ISLANDS DEPOSITED ON A SI(001) SUBSTRATE, Applied physics letters, 73(8), 1998, pp. 1044-1046
Authors:
BENDAYAN M
KAPON R
BESERMAN R
SAAR A
PLANEL R
Citation: M. Bendayan et al., LOCAL MODULATION OF THE QUANTUM-WELL QUASI-CONTINUUM STATES USING CHARGED-CARRIER TRANSFER INDUCED BY INTERSUBBAND TRANSITIONS, Physical review. B, Condensed matter, 56(15), 1997, pp. 9239-9242
Authors:
FREIMAN W
BESERMAN R
DETTMER K
Citation: W. Freiman et al., TITANIUM METALLIZATION OF SI GE ALLOYS AND SUPERLATTICES/, Thin solid films, 294(1-2), 1997, pp. 217-219
Authors:
WEIL R
CHACK A
LEVY M
SALZMAN J
BESERMAN R
Citation: R. Weil et al., ORDERING DEPENDENCE OF PYROELECTRICITY IN GAXIN1-XP, Journal of applied physics, 81(8), 1997, pp. 3729-3731
Authors:
BENDAYAN M
BESERMAN R
DETTMER K
Citation: M. Bendayan et al., INFLUENCE OF QUASI-2-DIMENSIONAL DOPING ON THE RAMAN-SPECTRUM OF SI1-XGEX SI QUANTUM-WELLS/, Journal of applied physics, 81(12), 1997, pp. 7956-7960
Authors:
CHERGUI A
DEISS JL
GRUN JB
LOISON JL
ROBINO M
BESERMAN R
Citation: A. Chergui et al., STRUCTURAL AND OPTICAL CHARACTERISTICS OF PULSED-LASER DEPOSITED ZNSEEPILAYERS, Applied surface science, 96-8, 1996, pp. 874-880
Authors:
FREIMAN W
EYAL A
KHAIT YL
BESERMAN R
DETTMER K
Citation: W. Freiman et al., KINETICS OF PROCESSES IN THE TI-SI1-XGEX SYSTEMS, Applied physics letters, 69(25), 1996, pp. 3821-3823
Authors:
EYAL A
BRENER R
BESERMAN R
EIZENBERG M
ATZMON Z
SMITH DJ
MAYER JW
Citation: A. Eyal et al., THE EFFECT OF CARBON ON STRAIN RELAXATION AND PHASE-FORMATION IN THE TI SI1-X-YGEXCY/SI CONTACT SYSTEM/, Applied physics letters, 69(1), 1996, pp. 64-66
Authors:
WASSERMAN A
BESERMAN R
DETTMER K
Citation: A. Wasserman et al., THICKNESS MEASUREMENTS OF SI1-XGEX THIN-LAYERS DEPOSITED ON SI MESA STRUCTURES, Journal of crystal growth, 157(1-4), 1995, pp. 96-99
Authors:
DETTMER K
BEHNER U
BESERMAN R
Citation: K. Dettmer et al., COMPARISON OF DIFFERENT SI GE ALLOY BUFFER CONCEPTS FOR (SIMGEN)(P) SUPERLATTICES/, Journal of crystal growth, 157(1-4), 1995, pp. 142-146
Authors:
DETTMER K
FREIMAN W
LEVY M
KHAIT YL
BESERMAN R
Citation: K. Dettmer et al., KINETICS OF INTERDIFFUSION IN STRAINED NANOMETER PERIOD SI GE SUPERLATTICES STUDIED BY RAMAN-SCATTERING/, Applied physics letters, 66(18), 1995, pp. 2376-2378
Authors:
KHAIT YL
BESERMAN R
SHAW D
DETTMER K
Citation: Yl. Khait et al., DIFFUSION-MELTING CORRELATIONS AND THE COMPENSATION EFFECT IN ATOMIC DIFFUSION IN SI AND GE, Physical review. B, Condensed matter, 50(20), 1994, pp. 14893-14902
Authors:
MAAYAN E
KREININ O
BAHIR G
SALZMAN J
EYAL A
BESERMAN R
Citation: E. Maayan et al., SELECTIVE GROWTH OF GAAS INGAP HETEROSTRUCTURES BY PHOTO-ENHANCED ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 135(1-2), 1994, pp. 23-30
Authors:
EYAL A
BESERMAN R
WEI SH
ZUNGER A
MAAYAN E
KREININ O
SALZMAN J
WESTPHALEN R
HEIME K
Citation: A. Eyal et al., INFLUENCE OF GA CONCENTRATION ON THE ORDERING PROCESS OF GAXIN1-XP GROWN ON GAAS, JPN J A P 1, 32, 1993, pp. 716-719
Authors:
EDELMAN F
KOMEM Y
BENDAYAN M
BESERMAN R
Citation: F. Edelman et al., ON THE CRYSTALLIZATION OF AMORPHOUS-GERMANIUM FILMS, Applied surface science, 70-1, 1993, pp. 727-730
Authors:
RIM A
BESERMAN R
Citation: A. Rim et R. Beserman, OXIDATION PROCESSES IN UNDOPED GAAS AND IN SI-DOPED GAAS, Journal of applied physics, 74(2), 1993, pp. 897-901
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